NL239785A - - Google Patents
Info
- Publication number
- NL239785A NL239785A NL239785DA NL239785A NL 239785 A NL239785 A NL 239785A NL 239785D A NL239785D A NL 239785DA NL 239785 A NL239785 A NL 239785A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/074—Horizontal melt solidification
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exhaust Gas After Treatment (AREA)
- Catalysts (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL239785 | 1959-06-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL239785A true NL239785A (xx) |
Family
ID=19751761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL239785D NL239785A (xx) | 1959-06-02 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3102828A (xx) |
DE (1) | DE1446211A1 (xx) |
NL (1) | NL239785A (xx) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE618264A (xx) * | 1959-06-18 | |||
NL277300A (xx) * | 1961-04-20 | |||
US3275906A (en) * | 1962-08-20 | 1966-09-27 | Nippon Electric Co | Multiple hetero-layer composite semiconductor device |
US3271179A (en) * | 1962-09-24 | 1966-09-06 | Temescal Metallurgical Corp | Method for the manufacture of an optical filter |
DE1298512B (de) * | 1964-03-13 | 1969-07-03 | Telefunken Patent | Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen |
US3338760A (en) * | 1964-06-03 | 1967-08-29 | Massachusetts Inst Technology | Method of making a heterojunction semiconductor device |
US3428474A (en) * | 1964-06-24 | 1969-02-18 | Bausch & Lomb | Method for forming ceramic metallic bonds |
US3458368A (en) * | 1966-05-23 | 1969-07-29 | Texas Instruments Inc | Integrated circuits and fabrication thereof |
NL6615059A (xx) * | 1966-10-25 | 1968-04-26 | ||
US3766447A (en) * | 1971-10-20 | 1973-10-16 | Harris Intertype Corp | Heteroepitaxial structure |
DE2607911A1 (de) * | 1976-02-26 | 1977-09-01 | Siemens Ag | Verfahren zur reinigung eines germaniumkoerpers |
US4357183A (en) * | 1980-08-13 | 1982-11-02 | Massachusetts Institute Of Technology | Heteroepitaxy of germanium silicon on silicon utilizing alloying control |
US4861393A (en) * | 1983-10-28 | 1989-08-29 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy |
ES2154653T3 (es) * | 1994-05-06 | 2001-04-16 | Nestle Sa | Sistema de dosificacion de producto en polvo. |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB742237A (en) * | 1951-10-24 | 1955-12-21 | Ass Elect Ind | Improvements in barrier layer cells |
BE510303A (xx) * | 1951-11-16 | |||
DE966848C (de) * | 1952-07-29 | 1957-08-29 | Licentia Gmbh | Verfahren zum Herstellen von scharf abgegrenzten Schichten entgegengesetzten Leitfaehigkeitstyps auf einem fertigen Halbleiterkristall eines bestimmten Leitfaehigkeitstyps |
NL180750B (nl) * | 1952-08-20 | Bristol Myers Co | Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten. | |
DE1240188B (de) * | 1954-10-29 | 1967-05-11 | Telefunken Patent | Verfahren zum Herstellen von Halbleiterbauelementen mit einem oder mehreren einlegierten p-n-UEbergaengen |
GB805493A (en) * | 1955-04-07 | 1958-12-10 | Telefunken Gmbh | Improved method for the production of semi-conductor devices of npn or pnp type |
US2855334A (en) * | 1955-08-17 | 1958-10-07 | Sprague Electric Co | Method of preparing semiconducting crystals having symmetrical junctions |
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0
- NL NL239785D patent/NL239785A/xx unknown
-
1960
- 1960-05-30 DE DE19601446211 patent/DE1446211A1/de active Pending
- 1960-06-01 US US33291A patent/US3102828A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3102828A (en) | 1963-09-03 |
DE1446211A1 (de) | 1969-02-06 |