DE1291800B - Vorspannschaltung fuer einen eine Tunneldiode als aktives Element und einen damit gekoppelten frequenzbestimmenden Resonanzkreis enthaltenden Oszillator oder Verstaerker - Google Patents
Vorspannschaltung fuer einen eine Tunneldiode als aktives Element und einen damit gekoppelten frequenzbestimmenden Resonanzkreis enthaltenden Oszillator oder VerstaerkerInfo
- Publication number
- DE1291800B DE1291800B DE1963R0035107 DER0035107A DE1291800B DE 1291800 B DE1291800 B DE 1291800B DE 1963R0035107 DE1963R0035107 DE 1963R0035107 DE R0035107 A DER0035107 A DE R0035107A DE 1291800 B DE1291800 B DE 1291800B
- Authority
- DE
- Germany
- Prior art keywords
- resistance
- diode
- circuit
- tunnel diode
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000087 stabilizing effect Effects 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 15
- 230000010355 oscillation Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
- H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
- H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
- H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US193479A US3280339A (en) | 1959-07-07 | 1962-05-09 | Bias circuits for high frequency circuits utilizing voltage controlled negative resistance devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1291800B true DE1291800B (de) | 1969-04-03 |
Family
ID=22713806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1963R0035107 Pending DE1291800B (de) | 1962-05-09 | 1963-05-07 | Vorspannschaltung fuer einen eine Tunneldiode als aktives Element und einen damit gekoppelten frequenzbestimmenden Resonanzkreis enthaltenden Oszillator oder Verstaerker |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE631939A (ja) |
| DE (1) | DE1291800B (ja) |
| GB (1) | GB1014523A (ja) |
| NL (1) | NL292494A (ja) |
| SE (1) | SE322819B (ja) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1255899A (fr) * | 1959-08-05 | 1961-03-10 | Ibm | Oscillateur et son procédé de fabrication |
-
0
- NL NL292494D patent/NL292494A/xx unknown
- BE BE631939D patent/BE631939A/xx unknown
-
1963
- 1963-04-02 GB GB1308563A patent/GB1014523A/en not_active Expired
- 1963-05-07 DE DE1963R0035107 patent/DE1291800B/de active Pending
- 1963-05-08 SE SE5068/63A patent/SE322819B/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1255899A (fr) * | 1959-08-05 | 1961-03-10 | Ibm | Oscillateur et son procédé de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| NL292494A (ja) | |
| SE322819B (ja) | 1970-04-20 |
| BE631939A (ja) | |
| GB1014523A (en) | 1965-12-31 |
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