SE322819B - - Google Patents

Info

Publication number
SE322819B
SE322819B SE5068/63A SE506863A SE322819B SE 322819 B SE322819 B SE 322819B SE 5068/63 A SE5068/63 A SE 5068/63A SE 506863 A SE506863 A SE 506863A SE 322819 B SE322819 B SE 322819B
Authority
SE
Sweden
Prior art keywords
diode
resistance
tunnel diode
circuit
tunnel
Prior art date
Application number
SE5068/63A
Other languages
English (en)
Inventor
H Sommers
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US193479A external-priority patent/US3280339A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE322819B publication Critical patent/SE322819B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
SE5068/63A 1962-05-09 1963-05-08 SE322819B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US193479A US3280339A (en) 1959-07-07 1962-05-09 Bias circuits for high frequency circuits utilizing voltage controlled negative resistance devices

Publications (1)

Publication Number Publication Date
SE322819B true SE322819B (ja) 1970-04-20

Family

ID=22713806

Family Applications (1)

Application Number Title Priority Date Filing Date
SE5068/63A SE322819B (ja) 1962-05-09 1963-05-08

Country Status (5)

Country Link
BE (1) BE631939A (ja)
DE (1) DE1291800B (ja)
GB (1) GB1014523A (ja)
NL (1) NL292494A (ja)
SE (1) SE322819B (ja)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1255899A (fr) * 1959-08-05 1961-03-10 Ibm Oscillateur et son procédé de fabrication

Also Published As

Publication number Publication date
NL292494A (ja)
DE1291800B (de) 1969-04-03
BE631939A (ja)
GB1014523A (en) 1965-12-31

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