GB1014523A - Biasing circuits for electrical circuits utilizing voltage controlled negative resistance diodes - Google Patents

Biasing circuits for electrical circuits utilizing voltage controlled negative resistance diodes

Info

Publication number
GB1014523A
GB1014523A GB1308563A GB1308563A GB1014523A GB 1014523 A GB1014523 A GB 1014523A GB 1308563 A GB1308563 A GB 1308563A GB 1308563 A GB1308563 A GB 1308563A GB 1014523 A GB1014523 A GB 1014523A
Authority
GB
United Kingdom
Prior art keywords
diode
negative resistance
resistance
voltage controlled
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1308563A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US193479A external-priority patent/US3280339A/en
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1014523A publication Critical patent/GB1014523A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

1,014,523. Tunnel diode supply arrangements. RADIO CORPORATION OF AMERICA. April 2, 1963 [May 9, 1962], No. 13085/63. Heading H3T. A biasing circuit for a voltage controlled negative resistance diode comprises a non- linear resistor having a dynamic resistance which is lower than the absolute value of the minimum negative resistance of the diode at the operating voltage at which this minimum negative resistance occurs. As described an oscillator, Fig. 5, comprises a resonant transmission line 44, 46 connected to a tunnel diode 48. The non-liner resistor is a backward diode 50 placed in parallel with the tunnel diode at a voltage node on the line and connected to a bias supply 52 via a variable resistor 54. Referring to Fig. 1, the backward diode may be chosen to have a characteristic 36 which exhibits a lower resistance at the point 40 than the tunnel diode, thus producing a stable circuit as seen from the bias source. At greater values of E however the dynamic resistance of this diode is greater, thus reducing the power losses in the circuit.
GB1308563A 1962-05-09 1963-04-02 Biasing circuits for electrical circuits utilizing voltage controlled negative resistance diodes Expired GB1014523A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US193479A US3280339A (en) 1959-07-07 1962-05-09 Bias circuits for high frequency circuits utilizing voltage controlled negative resistance devices

Publications (1)

Publication Number Publication Date
GB1014523A true GB1014523A (en) 1965-12-31

Family

ID=22713806

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1308563A Expired GB1014523A (en) 1962-05-09 1963-04-02 Biasing circuits for electrical circuits utilizing voltage controlled negative resistance diodes

Country Status (5)

Country Link
BE (1) BE631939A (en)
DE (1) DE1291800B (en)
GB (1) GB1014523A (en)
NL (1) NL292494A (en)
SE (1) SE322819B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1255899A (en) * 1959-08-05 1961-03-10 Ibm Oscillator and its manufacturing process

Also Published As

Publication number Publication date
NL292494A (en)
DE1291800B (en) 1969-04-03
SE322819B (en) 1970-04-20
BE631939A (en)

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