DE1279662B - Verfahren zum Aufwachsen von Halbleitermaterial aus der Gasphase - Google Patents

Verfahren zum Aufwachsen von Halbleitermaterial aus der Gasphase

Info

Publication number
DE1279662B
DE1279662B DE1962S0080852 DES0080852A DE1279662B DE 1279662 B DE1279662 B DE 1279662B DE 1962S0080852 DE1962S0080852 DE 1962S0080852 DE S0080852 A DES0080852 A DE S0080852A DE 1279662 B DE1279662 B DE 1279662B
Authority
DE
Germany
Prior art keywords
rod
mechanical treatment
semiconductor material
monocrystalline
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE1962S0080852
Other languages
German (de)
English (en)
Inventor
Ulrich Rucha
Dipl-Chem Dr Herbert Sandmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE634742D priority Critical patent/BE634742A/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE1962S0080852 priority patent/DE1279662B/de
Priority to DE19631444534 priority patent/DE1444534B2/de
Priority to CH816963A priority patent/CH421912A/de
Priority to GB3163663A priority patent/GB1059354A/en
Publication of DE1279662B publication Critical patent/DE1279662B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/12—Etching in gas atmosphere or plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE1962S0080852 1962-08-09 1962-08-10 Verfahren zum Aufwachsen von Halbleitermaterial aus der Gasphase Pending DE1279662B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
BE634742D BE634742A (US07714131-20100511-C00024.png) 1962-08-09
DE1962S0080852 DE1279662B (de) 1962-08-09 1962-08-10 Verfahren zum Aufwachsen von Halbleitermaterial aus der Gasphase
DE19631444534 DE1444534B2 (de) 1962-08-09 1963-03-26 Verfahren zum aufwachsen von halbleitermaterial aus der gasphase
CH816963A CH421912A (de) 1962-08-09 1963-07-01 Verfahren zur Herstellung eines einkristallinen Halbleiterkörpers aus Germanium oder Silizium
GB3163663A GB1059354A (en) 1962-08-09 1963-08-09 The production of monocrystalline semiconductor bodies of silicon or germanium

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES0080823 1962-08-09
DE1962S0080852 DE1279662B (de) 1962-08-09 1962-08-10 Verfahren zum Aufwachsen von Halbleitermaterial aus der Gasphase
DES0084354 1963-03-26

Publications (1)

Publication Number Publication Date
DE1279662B true DE1279662B (de) 1968-10-10

Family

ID=27212781

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1962S0080852 Pending DE1279662B (de) 1962-08-09 1962-08-10 Verfahren zum Aufwachsen von Halbleitermaterial aus der Gasphase
DE19631444534 Pending DE1444534B2 (de) 1962-08-09 1963-03-26 Verfahren zum aufwachsen von halbleitermaterial aus der gasphase

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19631444534 Pending DE1444534B2 (de) 1962-08-09 1963-03-26 Verfahren zum aufwachsen von halbleitermaterial aus der gasphase

Country Status (4)

Country Link
BE (1) BE634742A (US07714131-20100511-C00024.png)
CH (1) CH421912A (US07714131-20100511-C00024.png)
DE (2) DE1279662B (US07714131-20100511-C00024.png)
GB (1) GB1059354A (US07714131-20100511-C00024.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101655427B (zh) * 2009-09-04 2012-08-01 中国电子科技集团公司第四十六研究所 一种锗单晶片位错腐蚀检测方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion

Also Published As

Publication number Publication date
DE1444534A1 (de) 1969-01-23
GB1059354A (en) 1967-02-22
DE1444534B2 (de) 1971-07-01
BE634742A (US07714131-20100511-C00024.png)
CH421912A (de) 1966-10-15

Similar Documents

Publication Publication Date Title
DE1023889B (de) Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
DE1177119B (de) Verfahren zur Herstellung von Reinstsilicium
DE1025845B (de) Verfahren zur Herstellung von reinstem Silicium
DE68909481T2 (de) Siliciumcarbid-Diffusionsrohr für Halbleiter.
DE1521950B2 (de) Verfahren zur herstellung eines oxydbelages auf einem vor zugsweise einkristallinen halbleiterkoerper und anwendung des verfahrens zum vergleichmaessigen der oberflaeche und zum dotieren
DE1279662B (de) Verfahren zum Aufwachsen von Halbleitermaterial aus der Gasphase
DE2161472C3 (de) Verfahren zum Aufwachsen einer polykristallinen Silicium-Schicht auf einer Halbleiterscheibe
DE2918066C2 (US07714131-20100511-C00024.png)
DE1544292A1 (de) Verfahren zum Herstellen stabfoermiger Siliciumeinkristalle mit ueber die gesamte Stablaenge homogener Antimondotierung
DE1519892A1 (de) Verfahren zum Herstellen von hochreinen kristallinen,insbesondere einkristallinen Materialien
DE1619975A1 (de) Halbleitender Koerper und Verfahren zu seiner Herstellung
DE1009166B (de) Verfahren zur Entfernung von Sauerstoff oder Wasserstoff aus Gemischen dieser Gase mit Stickstoff oder Edelgasen
DE966905C (de) Verfahren zur Herstellung elektrisch unsymmetrisch leitender Systeme
DE1261842B (de) Verfahren zum Herstellen von hochreinem Silicium
DE1251295B (de) Verfahren zur Herstellung von femteiligem Urandioxyd bestimmter Teilchengroße
DE1164680B (de) Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit
DE1143374B (de) Verfahren zur Abtragung der Oberflaeche eines Halbleiterkristalls und anschliessenden Kontaktierung
AT222183B (de) Verfahren zur Abscheidung von Halbleitermaterial
CH434215A (de) Verfahren zur Herstellung von Halbleiteranordnungen, insbesondere Transistoren und Dioden, und nach diesem Verfahren hergestellte Halbleiteranordnungen
DE1187803B (de) Verfahren zum Reinigen von Germanium
DE1189655B (de) Verfahren zum Erzeugen einer stabilisierenden Oxydschicht auf einer Halbleiteroberflaeche
DE485714C (de) Herstellung von aktiven Sauerstoff enthaltenden Verbindungen
Erfurt H. KRAUSE, M. FIENHOLD
DE1796242A1 (de) Verfahren zur Aufbereitung von Gipsschlaemmen
AT262379B (de) Verfahren zur Erzeugung von hochreinen Siliziumkarbid-Schichten für Halbleiterzwecke