DE1278023B - Halbleiterschaltelement und Verfahren zu seiner Herstellung - Google Patents

Halbleiterschaltelement und Verfahren zu seiner Herstellung

Info

Publication number
DE1278023B
DE1278023B DEW38582A DEW0038582A DE1278023B DE 1278023 B DE1278023 B DE 1278023B DE W38582 A DEW38582 A DE W38582A DE W0038582 A DEW0038582 A DE W0038582A DE 1278023 B DE1278023 B DE 1278023B
Authority
DE
Germany
Prior art keywords
semiconductor
switching element
electrode
semiconductor body
semiconductor switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW38582A
Other languages
German (de)
English (en)
Inventor
John J Steinmetz Jun
Adalbert N Knopp
Richard T Kuehn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE1278023B publication Critical patent/DE1278023B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DEW38582A 1964-02-20 1965-02-19 Halbleiterschaltelement und Verfahren zu seiner Herstellung Pending DE1278023B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US346269A US3343048A (en) 1964-02-20 1964-02-20 Four layer semiconductor switching devices having a shorted emitter and method of making the same

Publications (1)

Publication Number Publication Date
DE1278023B true DE1278023B (de) 1968-09-19

Family

ID=23358663

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW38582A Pending DE1278023B (de) 1964-02-20 1965-02-19 Halbleiterschaltelement und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US3343048A (en:Method)
BE (1) BE659928A (en:Method)
DE (1) DE1278023B (en:Method)
GB (1) GB1088637A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT376844B (de) * 1972-12-29 1985-01-10 Sony Corp Halbleiterbauteil

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3422323A (en) * 1966-03-18 1969-01-14 Mallory & Co Inc P R Five-layer light-actuated semiconductor device having bevelled sides
CH436494A (de) * 1966-04-22 1967-05-31 Bbc Brown Boveri & Cie Steuerbares Halbleiterventil
CH444975A (de) * 1966-09-27 1967-10-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone
US3504241A (en) * 1967-03-06 1970-03-31 Anatoly Nikolaevich Dumanevich Semiconductor bidirectional switch
US3476992A (en) * 1967-12-26 1969-11-04 Westinghouse Electric Corp Geometry of shorted-cathode-emitter for low and high power thyristor
US3643136A (en) * 1970-05-22 1972-02-15 Gen Electric Glass passivated double beveled semiconductor device with partially spaced preform
US4059708A (en) * 1976-07-30 1977-11-22 Bell Telephone Laboratories, Incorporated Method for selective encapsulation
US4292646A (en) * 1977-01-07 1981-09-29 Rca Corporation Semiconductor thyristor device having integral ballast means
EP0520294B1 (de) * 1991-06-24 1998-08-26 Siemens Aktiengesellschaft Halbleiterbauelement und Verfahren zu seiner Herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
DE1117773B (de) * 1958-08-08 1961-11-23 Siemens Ag Verfahren zur Befestigung von elektrischen Leitungsanschluessen an Legierungselektroden in einkristallinen Halbleiterkoerpern
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
DE1154872B (de) * 1959-09-08 1963-09-26 Gen Electric Halbleiterbauelement mit einem mindestens drei pn-UEbergaenge aufweisenden Halbleiterkoerper

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL129185C (en:Method) * 1960-06-10
US3124703A (en) * 1960-06-13 1964-03-10 Figure
US3090873A (en) * 1960-06-21 1963-05-21 Bell Telephone Labor Inc Integrated semiconductor switching device
US3280392A (en) * 1961-05-09 1966-10-18 Siemens Ag Electronic semiconductor device of the four-layer junction type
GB942901A (en) * 1961-08-29 1963-11-27 Ass Elect Ind Improvements in controlled semi-conductor rectifiers
DE1206090B (de) * 1962-04-16 1965-12-02 Telefunken Patent Verfahren zum AEtzen eines Mesatransistors
BE632999A (en:Method) * 1962-06-01
NL296608A (en:Method) * 1962-08-15

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1117773B (de) * 1958-08-08 1961-11-23 Siemens Ag Verfahren zur Befestigung von elektrischen Leitungsanschluessen an Legierungselektroden in einkristallinen Halbleiterkoerpern
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
DE1154872B (de) * 1959-09-08 1963-09-26 Gen Electric Halbleiterbauelement mit einem mindestens drei pn-UEbergaenge aufweisenden Halbleiterkoerper
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT376844B (de) * 1972-12-29 1985-01-10 Sony Corp Halbleiterbauteil

Also Published As

Publication number Publication date
BE659928A (en:Method) 1965-06-16
US3343048A (en) 1967-09-19
GB1088637A (en) 1967-10-25

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