CH444975A - Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone - Google Patents

Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone

Info

Publication number
CH444975A
CH444975A CH1393966A CH1393966A CH444975A CH 444975 A CH444975 A CH 444975A CH 1393966 A CH1393966 A CH 1393966A CH 1393966 A CH1393966 A CH 1393966A CH 444975 A CH444975 A CH 444975A
Authority
CH
Switzerland
Prior art keywords
producing
semiconductor element
short circuits
emitter zone
pnpn structure
Prior art date
Application number
CH1393966A
Other languages
English (en)
Inventor
Edouard Dipl Ing Eugster
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1393966A priority Critical patent/CH444975A/de
Priority to DE19661539665 priority patent/DE1539665C/de
Priority to SE9944/67*A priority patent/SE317449B/xx
Priority to US664121A priority patent/US3494791A/en
Priority to FR122073A priority patent/FR1537585A/fr
Priority to GB43544/67A priority patent/GB1196014A/en
Priority to NL6713025A priority patent/NL6713025A/xx
Publication of CH444975A publication Critical patent/CH444975A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Thyristors (AREA)
CH1393966A 1966-09-27 1966-09-27 Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone CH444975A (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CH1393966A CH444975A (de) 1966-09-27 1966-09-27 Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone
DE19661539665 DE1539665C (de) 1966-09-27 1966-11-02 Verfahren zum Herstellen eines steuerbaren Halbleiterelementes mit pnpn-Zonenfolge, dessen Emitterzone an mehreren Stellen kurzgeschlossen ist
SE9944/67*A SE317449B (de) 1966-09-27 1967-06-30
US664121A US3494791A (en) 1966-09-27 1967-08-29 Process for the production of a controllable semiconductor element with a pnpn structure with short-circuits in the emitter zone
FR122073A FR1537585A (fr) 1966-09-27 1967-09-25 Procédé pour la fabrication d'un élément commandé à semi-conducteur, de stucture pnpn, avec des courts-circuits dans la zone de l'émetteur
GB43544/67A GB1196014A (en) 1966-09-27 1967-09-25 Process for the Production of a Controllable Semiconductor Element with a pnpn Structure with Short-Circuits in the Emitter Zone.
NL6713025A NL6713025A (de) 1966-09-27 1967-09-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1393966A CH444975A (de) 1966-09-27 1966-09-27 Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone

Publications (1)

Publication Number Publication Date
CH444975A true CH444975A (de) 1967-10-15

Family

ID=4396638

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1393966A CH444975A (de) 1966-09-27 1966-09-27 Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone

Country Status (5)

Country Link
US (1) US3494791A (de)
CH (1) CH444975A (de)
GB (1) GB1196014A (de)
NL (1) NL6713025A (de)
SE (1) SE317449B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2000299A1 (fr) * 1968-01-16 1969-09-05 Bbc Brown Boveri & Cie Procede et dispositif pour ajuster a une valeur desiree le courant d'amorcage d'un element commande a semi-conducteurs
FR2424631A1 (fr) * 1978-04-26 1979-11-23 Fiz Tekhn I Thyristor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874959A (en) * 1973-09-21 1975-04-01 Ibm Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2923868A (en) * 1954-07-22 1960-02-02 Rca Corp Semiconductor devices
US3163568A (en) * 1961-02-15 1964-12-29 Sylvania Electric Prod Method of treating semiconductor devices
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3365794A (en) * 1964-05-15 1968-01-30 Transitron Electronic Corp Semiconducting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2000299A1 (fr) * 1968-01-16 1969-09-05 Bbc Brown Boveri & Cie Procede et dispositif pour ajuster a une valeur desiree le courant d'amorcage d'un element commande a semi-conducteurs
FR2424631A1 (fr) * 1978-04-26 1979-11-23 Fiz Tekhn I Thyristor

Also Published As

Publication number Publication date
DE1539665A1 (de) 1970-07-23
US3494791A (en) 1970-02-10
NL6713025A (de) 1968-03-28
DE1539665B2 (de) 1972-08-31
SE317449B (de) 1969-11-17
GB1196014A (en) 1970-06-24

Similar Documents

Publication Publication Date Title
FR1507841A (fr) Procédé de fabrication de panneaux durs
AT310437B (de) Vorrichtung zum Herstellen von mit Verzierungen oder Beschriftungen versehenen Kunststoffartikeln durch Spritzgießen
AT271892B (de) Verfahren zur Herstellung von Polyamiden mit Ätherbindungen
CH482306A (de) Verfahren zur Herstellung einer mit Kontakten versehenen Halbleiter-Anordnung
AT274386B (de) Verfahren zur Herstellung von plastifizierten Polyvinylharzen
NL139250B (nl) Spuitgietwerkwijze.
CH464502A (de) Kunststoff-Formmaschine mit Formwerkzeug
CH444975A (de) Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone
AT286086B (de) Verfahren zur Herstellung eines Präparates mit Fleischgeschmack
CH431727A (de) Verfahren zur Herstellung von mit ohmschen Kontakten versehenen Halbleitervorrichtungen
CH462338A (de) Anordnung mit einem lichtempfindlichen Halbleiter-Bauelement und Verfahren zum Herstellen einer derartigen Anordnung
AT311655B (de) Spritzgußmaschine
AT268659B (de) Verfahren zur Herstellung von Körpern aus thermoplastischen Kunststoffen mit matter Oberfläche
CH470759A (de) Verfahren zur Herstellung eines Halbleiterbauelementes
AT262383B (de) Verfahren zur Herstellung einer integrierten Schaltung
CH452710A (de) Verfahren zur Herstellung eines steuerbaren Halbleiterventils mit pnpn Struktur mit einer mit Kurzschlüssen versehenen Emitterzone
CH498202A (de) Verfahren zur Metallisierung von geformten Gebilden aus Kunststoffen
CH468721A (de) Verfahren zum gleichzeitigen Herstellen einer Vielzahl von Halbleiterbauelementen
CH484964A (fr) Procédé de fabrication de polyamide
CH493936A (de) Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung
AT260308B (de) Verfahren zur Herstellung einer Halbleiteranordnung mit einer Mesa
CH510593A (de) Verfahren zur Herstellung von Formteilen mit hohen spezifischen Oberflächen
CH474825A (de) Verfahren zur Herstellung von elektrischen Kondensatoren mit Halbleiterschicht
CH490781A (de) Verfahren zur Herstellung von als Rekombinationsstrahler verwendbaren Halbleiterbauelementen
AT339959B (de) Verfahren zum herstellen einer integrierten monolithischen halbleiteranordnung mit versenkter isolierschicht