DE1258518B - Verfahren zum Herstellen eines Halbleiterelements mit einer gelochten Isolierschicht ueber einer eingelassenen Zone - Google Patents

Verfahren zum Herstellen eines Halbleiterelements mit einer gelochten Isolierschicht ueber einer eingelassenen Zone

Info

Publication number
DE1258518B
DE1258518B DEP32074A DEP0032074A DE1258518B DE 1258518 B DE1258518 B DE 1258518B DE P32074 A DEP32074 A DE P32074A DE P0032074 A DEP0032074 A DE P0032074A DE 1258518 B DE1258518 B DE 1258518B
Authority
DE
Germany
Prior art keywords
layer
silicon
contact
disk
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEP32074A
Other languages
German (de)
English (en)
Inventor
John Magner Allen
Maurice William White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GE Healthcare UK Ltd
Original Assignee
GE Healthcare UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GE Healthcare UK Ltd filed Critical GE Healthcare UK Ltd
Publication of DE1258518B publication Critical patent/DE1258518B/de
Pending legal-status Critical Current

Links

Classifications

    • H10W20/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/43—
    • H10W72/07554—
    • H10W72/536—

Landscapes

  • Electrodes Of Semiconductors (AREA)
DEP32074A 1962-06-29 1963-06-26 Verfahren zum Herstellen eines Halbleiterelements mit einer gelochten Isolierschicht ueber einer eingelassenen Zone Pending DE1258518B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB25145/62A GB998388A (en) 1962-06-29 1962-06-29 Improvements in or relating to semiconductor junction devices

Publications (1)

Publication Number Publication Date
DE1258518B true DE1258518B (de) 1968-01-11

Family

ID=10222955

Family Applications (1)

Application Number Title Priority Date Filing Date
DEP32074A Pending DE1258518B (de) 1962-06-29 1963-06-26 Verfahren zum Herstellen eines Halbleiterelements mit einer gelochten Isolierschicht ueber einer eingelassenen Zone

Country Status (5)

Country Link
DE (1) DE1258518B (enExample)
FR (1) FR1361215A (enExample)
GB (1) GB998388A (enExample)
IT (1) IT699934A (enExample)
NL (1) NL294593A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
US3363152A (en) * 1964-01-24 1968-01-09 Westinghouse Electric Corp Semiconductor devices with low leakage current across junction
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
US3319135A (en) * 1964-09-03 1967-05-09 Texas Instruments Inc Low capacitance planar diode
US3413527A (en) * 1964-10-02 1968-11-26 Gen Electric Conductive electrode for reducing the electric field in the region of the junction of a junction semiconductor device
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
US3508123A (en) * 1966-07-13 1970-04-21 Gen Instrument Corp Oxide-type varactor with increased capacitance range
US3423606A (en) * 1966-07-21 1969-01-21 Gen Instrument Corp Diode with sharp reverse-bias breakdown characteristic

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB686915A (en) * 1950-06-09 1953-02-04 Standard Telephones Cables Ltd Improvements in or relating to crystal diodes and triodes
CH351031A (de) * 1956-02-28 1960-12-31 Philips Nv Verfahren zur Herstellung von Halbleiter-Vorrichtungen
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB686915A (en) * 1950-06-09 1953-02-04 Standard Telephones Cables Ltd Improvements in or relating to crystal diodes and triodes
CH351031A (de) * 1956-02-28 1960-12-31 Philips Nv Verfahren zur Herstellung von Halbleiter-Vorrichtungen
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Also Published As

Publication number Publication date
NL294593A (enExample)
IT699934A (enExample)
GB998388A (en) 1965-07-14
FR1361215A (fr) 1964-05-15

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