GB686915A - Improvements in or relating to crystal diodes and triodes - Google Patents

Improvements in or relating to crystal diodes and triodes

Info

Publication number
GB686915A
GB686915A GB1442950A GB1442950A GB686915A GB 686915 A GB686915 A GB 686915A GB 1442950 A GB1442950 A GB 1442950A GB 1442950 A GB1442950 A GB 1442950A GB 686915 A GB686915 A GB 686915A
Authority
GB
United Kingdom
Prior art keywords
crystal
rectifying
electrodes
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1442950A
Inventor
Arthur Tisso Starr
Charles De Boismaison White
Norman Sidney Cinderey
Kenneth Albert Matthews
Reginald Benjamin Willia Cooke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE503668D priority Critical patent/BE503668A/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB1442950A priority patent/GB686915A/en
Priority to FR63209D priority patent/FR63209E/en
Priority to CH305857D priority patent/CH305857A/en
Priority to ES0198242A priority patent/ES198242A1/en
Priority to FR64122D priority patent/FR64122E/en
Priority to FR65238D priority patent/FR65238E/en
Priority to FR65380D priority patent/FR65380E/en
Publication of GB686915A publication Critical patent/GB686915A/en
Priority to FR65573D priority patent/FR65573E/en
Priority to FR65867D priority patent/FR65867E/en
Priority to FR67258D priority patent/FR67258E/en
Priority to FR69063D priority patent/FR69063E/en
Priority to FR69069D priority patent/FR69069E/en
Priority to FR69071D priority patent/FR69071E/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

686,915. Semi-conductor amplifiers. STANDARD TELEPHONES & CABLES, Ltd. June 1, 1951 [June 9, 1950; Aug. 25, 1950], Nos. 14429/50 and 21040/50. Class 40 (iv). [Also in Group XXXVI] An electric signal translating device comprises a disc or plate of semi-conductor which crystallizes in isotropic cubic lattice, having a base electrode of extended area, and a further electrode consisting of a metal film of area not less than 10<SP>-4</SP> sq. mm. and not greater than one sq. mm., which occupies a hole in a layer of insulation on the surface of the crystal. Fig. 1 shows a crystal diode comprising a block of semiconductor 1 consisting of silicon, germanium or lead sulphide covered by a layer of insulation 3, a hole in the layer 3 being filled with metal to form the rectifying contact. A layer 5 of silver or other metal is deposited to make contact with the electrode 4. The surface of the semi-conductor is plated to form base electrode 2. Compared with a point contact, the hole 4 has appreciable area lying between 10<SP>-4</SP> and 1 sq. mm. The characteristics of the rectifier can be modified by varying the area of the rectifying electrode, a larger area tending to reduce both forward and reverse resistance, but not in the same proportion. The " turnover voltage " (i.e. the point on the reverse characteristic at which instability occurs) is also affected by the hole size. A number of these diode rectifiers may be assembled in a pile with terminal washers, as is the practice with selenium or copper oxide rectifiers, to form bridge rectifiers or ring modulators. Terminal wires may be connected to the electrodes, or holders having spring contacts may be provided. More than one rectifying contact may be provided, as shown in Fig. 3, to form a crystal triode, and a further modification in Fig. 4 shows the combination of a cat's-whisker electrode 8 operatively associated with the rectifying contact 6. Additional rectifying contacts may be provided with the crystal triode arrangements as described in Specification 681,829. Donor or acceptor impurities may be added to the metal used for the rectifying electrodes, in conjunction with an electroforming process, to improve the current gain characteristic of crystal triodes as described in Specification 681,809, or gold may be used as described in Specification 686,907. The electrodes may be deposited by coating the crystal with prepared gelatine and photographing thereon an image of the electrodes, so that after development a stencil is formed through which the electrodes may be electro-plated on to the surface of the crystal. A brass or copper mounting block may be used to keep the device cool. Specification 686,948 also is referred to.
GB1442950A 1949-07-29 1950-06-09 Improvements in or relating to crystal diodes and triodes Expired GB686915A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
BE503668D BE503668A (en) 1950-06-09
GB1442950A GB686915A (en) 1950-06-09 1950-06-09 Improvements in or relating to crystal diodes and triodes
FR63209D FR63209E (en) 1949-07-29 1951-05-30 Triodes using crystals such as germanium crystals
CH305857D CH305857A (en) 1950-06-09 1951-06-08 Electrical device comprising a body of semiconductor material.
ES0198242A ES198242A1 (en) 1950-06-09 1951-06-08 IMPROVEMENTS IN OR RELATING TO CRYSTAL DIODES AND TRiODES
FR64122D FR64122E (en) 1949-07-29 1952-04-04 Triodes using crystals such as germanium crystals
FR65238D FR65238E (en) 1949-07-29 1952-07-18 Triodes using crystals such as germanium crystals
FR65380D FR65380E (en) 1949-07-29 1952-11-25 Triodes using crystals such as germanium crystals
FR65573D FR65573E (en) 1949-07-29 1953-02-27 Triodes using crystals such as germanium crystals
FR65867D FR65867E (en) 1949-07-29 1953-04-24 Triodes using crystals such as germainium crystals
FR67258D FR67258E (en) 1949-07-29 1954-08-03 Triodes using crystals such as germanium crystals
FR69063D FR69063E (en) 1949-07-29 1955-03-03 Triodes using crystals such as germanium crystals
FR69069D FR69069E (en) 1949-07-29 1955-04-07 Triodes using crystals such as germanium crystals
FR69071D FR69071E (en) 1950-06-09 1955-06-10 Triodes using crystals such as germanium crystals

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1442950A GB686915A (en) 1950-06-09 1950-06-09 Improvements in or relating to crystal diodes and triodes
GB2104050 1950-08-25

Publications (1)

Publication Number Publication Date
GB686915A true GB686915A (en) 1953-02-04

Family

ID=26250559

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1442950A Expired GB686915A (en) 1949-07-29 1950-06-09 Improvements in or relating to crystal diodes and triodes

Country Status (3)

Country Link
BE (1) BE503668A (en)
CH (1) CH305857A (en)
GB (1) GB686915A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258518B (en) * 1962-06-29 1968-01-11 Plessey Co Ltd Method for manufacturing a semiconductor element with a perforated insulating layer over a recessed zone
DE1197548B (en) * 1955-11-04 1975-02-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1197548B (en) * 1955-11-04 1975-02-13
DE1258518B (en) * 1962-06-29 1968-01-11 Plessey Co Ltd Method for manufacturing a semiconductor element with a perforated insulating layer over a recessed zone

Also Published As

Publication number Publication date
CH305857A (en) 1955-03-15
BE503668A (en)

Similar Documents

Publication Publication Date Title
US2680220A (en) Crystal diode and triode
US2524033A (en) Three-electrode circuit element utilizing semiconductive materials
US2629802A (en) Photocell amplifier construction
GB1019741A (en) Solid state devices
GB1365714A (en) Thyristor power switching circuits
US3013955A (en) Method of transistor manufacture
GB963256A (en) Semiconductor devices
SE316221B (en)
US2669663A (en) Semiconductor photoconducting device
US2734102A (en) Jacques i
GB686915A (en) Improvements in or relating to crystal diodes and triodes
US2629767A (en) Semiconductor amplifier or oscillator device
US2854611A (en) Rectifier
JPS55102267A (en) Semiconductor control element
US2916810A (en) Electric contacts
GB586984A (en) Rectifiers
GB1064522A (en) Controllable semi-conductor rectifiers
GB755691A (en) Method of soldering electrodes to semiconductor elements
US3634931A (en) Method for manufacturing pressure sensitive semiconductor device
GB1020151A (en) Electrical semiconductor device
GB835851A (en) Semiconductive translating devices and methods
US2923868A (en) Semiconductor devices
JPS6451658A (en) Semiconductor device
GB1052435A (en)
JPS55157240A (en) Semiconductor device