GB1064522A - Controllable semi-conductor rectifiers - Google Patents
Controllable semi-conductor rectifiersInfo
- Publication number
- GB1064522A GB1064522A GB3146664A GB3146664A GB1064522A GB 1064522 A GB1064522 A GB 1064522A GB 3146664 A GB3146664 A GB 3146664A GB 3146664 A GB3146664 A GB 3146664A GB 1064522 A GB1064522 A GB 1064522A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrode
- rectifier
- annulus
- aperture
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 4
- 229910052802 copper Inorganic materials 0.000 abstract 4
- 239000010949 copper Substances 0.000 abstract 4
- 229910052709 silver Inorganic materials 0.000 abstract 4
- 239000004332 silver Substances 0.000 abstract 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 2
- 229910000831 Steel Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 2
- 239000011733 molybdenum Substances 0.000 abstract 2
- 239000010959 steel Substances 0.000 abstract 2
- 241000271510 Agkistrodon contortrix Species 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910017709 Ni Co Inorganic materials 0.000 abstract 1
- 229910003267 Ni-Co Inorganic materials 0.000 abstract 1
- 229910003262 Ni‐Co Inorganic materials 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011888 foil Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003801 milling Methods 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 239000010970 precious metal Substances 0.000 abstract 1
- 238000007788 roughening Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,064,522. Semi-conductor controlled rectifiers. SIEMENS-SCHUCKERTWERKE. A.G. Aug. 4, 1964 [Aug. 3, 1963; March 25, 1964], No. 31466/64. Heading H1K. In a PNPN controlled rectifier the control electrode contacting one of the inner layers lies in an aperture in the adjacent outer layer, this aperture having an elongate parallel-sided slit-like portion. The uncompensated charge carrier concentration at the surface contacted by the control electrode is at least 10<SP>16</SP> and the preferred range is 8À10<SP>17</SP> to 5À10<SP>18</SP> cm.<SP>-3</SP>. Fig. 2 shows the basic structure, comprising an initially N crystal of silicon which has been diffusively doped with one or more of the dopants aluminium, gallium and boron to form an outer P region which-by milling, etching or sandblasting- is separated with two layers 3, 4 either by removing the edges of the crystal to expose the inner N zone or, as shown, by merely forming an annular groove breaking into the N region. Gold-antimony and gold-boron foils are alloyed to provide respectively the rectifying electrode 5 and the ohmic electrodes 7 and 10. In the latter case aluminium may be used instead of gold-boron. The resulting structure has a substantially annular N-region 6 underlying the electrode 5, and the electrode 7 lies in the centre of this annulus. The annulus is broken by at least one elongate aperture or slit: as shown in Fig. 1 there are two slits so that electrode 5 and region 6 are both in two parts 5a, 5b and 6a, 6b but Figs. 4 to 6 (not shown) depict similar forms with, respectively, four, six and one slits. Fig. 7 (not shown) depicts the rectifier of Figs. 1 and 2 housed in a sealed enclosure, the base of which is a copper heat sink (11). Alloyed to this base, e.g. by the surface roughening technique described in Specification 1,007,186, is a molybdenum or tungsten carrier plate (17) between which and the base (11) there may be a thin silver layer. The rectifier (16) is alloyed to the carrier plate (17). The other terminal electrode is connected to the copper head (15) of the enclosure via a molybdenum annulus (20), copper annulus (19), steel annulus (21) and copper tube (18). The control electrode is contacted by a copper pin (28) attached to a silver lead-out wire (34). Insulators (13, 22, 31, 32, and 35) isolate the three electrode systems. Fig. 9 (not shown) depicts an alternative form of the Fig. 1 rectifier in which a pair of aligned slits extend in opposite directions from a central circular aperture, but these slits may terminate short of the periphery of the outer electrode layer so that this layer is not divided into two halves as it is in Fig. 1. Fig. 8 (not shown) depicts an appropriate modification to the mount of Fig. 7 for accommodating the Fig. 9 rectifier. Fig. 12 (not shown) depicts a rectifier in which the aperture for the control electrode (63) is a simple slit. The control electrode lead-out is a silver or gold strip (65) which, in the mounting of Fig. 13 (not shown) will be clamped between steel or Fe-Ni-Co annular discs (72, 73). These discs are spaced by insulators from the terminal electrodes (70, 71) which are of a ductile precious metal such as silver.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1963S0086530 DE1234326B (en) | 1963-08-03 | 1963-08-03 | Controllable rectifier with a monocrystalline semiconductor body and four zones of alternating conduction types |
| DE1964S0090194 DE1261603B (en) | 1963-08-03 | 1964-03-25 | Controllable semiconductor component |
| DES0099845 | 1965-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1064522A true GB1064522A (en) | 1967-04-05 |
Family
ID=27212843
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3146664A Expired GB1064522A (en) | 1963-08-03 | 1964-08-04 | Controllable semi-conductor rectifiers |
| GB4269866A Expired GB1164465A (en) | 1963-08-03 | 1966-09-23 | Controllable Semiconductor Rectifiers |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4269866A Expired GB1164465A (en) | 1963-08-03 | 1966-09-23 | Controllable Semiconductor Rectifiers |
Country Status (4)
| Country | Link |
|---|---|
| CH (2) | CH434482A (en) |
| DE (3) | DE1234326B (en) |
| GB (2) | GB1064522A (en) |
| NL (2) | NL6413471A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3489957A (en) * | 1967-09-07 | 1970-01-13 | Power Semiconductors Inc | Semiconductor device in a sealed package |
| US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
| US3931635A (en) * | 1973-06-12 | 1976-01-06 | Allmanna Svenska Elektriska Aktiebolaget | Semiconductor device with a control electrode in pressure contact with the semiconductor disc |
| US4956696A (en) * | 1989-08-24 | 1990-09-11 | Sundstrand Corporation | Compression loaded semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3599057A (en) * | 1969-02-03 | 1971-08-10 | Gen Electric | Semiconductor device with a resilient lead construction |
| US3611066A (en) * | 1969-12-12 | 1971-10-05 | Gen Electric | Thyristor with integrated ballasted gate auxiliary thyristor portion |
| US3964090A (en) * | 1971-12-24 | 1976-06-15 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. | Semiconductor controlled rectifier |
| FR2254880B1 (en) * | 1973-12-12 | 1978-11-10 | Alsthom Cgee | |
| DE2422748C3 (en) * | 1974-05-10 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1132247B (en) * | 1959-01-30 | 1962-06-28 | Siemens Ag | Controlled four-layer triode with four semiconductor layers of alternating conductivity type |
| FR1250857A (en) * | 1959-02-26 | 1961-01-13 | Westinghouse Electric Corp | New layout of semiconductor devices |
| US2988677A (en) * | 1959-05-01 | 1961-06-13 | Ibm | Negative resistance semiconductor device structure |
| DE1103389B (en) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Switching arrangement with a four-layer semiconductor arrangement |
| US3189800A (en) * | 1959-12-14 | 1965-06-15 | Westinghouse Electric Corp | Multi-region two-terminal semiconductor device |
| FR1279792A (en) * | 1960-02-08 | 1961-12-22 | Pacific Semiconductors | Composite transistor |
| DE1133038B (en) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type |
| US3094633A (en) * | 1960-09-29 | 1963-06-18 | Itt | Semiconductor multiplanar rectifying junction diode |
| FR1342994A (en) * | 1961-10-06 | 1963-11-15 | Westinghouse Electric Corp | Semiconductor switches |
-
1963
- 1963-08-03 DE DE1963S0086530 patent/DE1234326B/en active Pending
-
1964
- 1964-03-25 DE DE1964S0090194 patent/DE1261603B/en active Pending
- 1964-07-20 CH CH949964A patent/CH434482A/en unknown
- 1964-08-04 GB GB3146664A patent/GB1064522A/en not_active Expired
- 1964-11-19 NL NL6413471A patent/NL6413471A/xx unknown
-
1965
- 1965-09-30 DE DE19651514593 patent/DE1514593B1/en active Pending
-
1966
- 1966-09-20 NL NL6613255A patent/NL6613255A/xx unknown
- 1966-09-23 GB GB4269866A patent/GB1164465A/en not_active Expired
- 1966-09-27 CH CH1392166A patent/CH449124A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
| US3489957A (en) * | 1967-09-07 | 1970-01-13 | Power Semiconductors Inc | Semiconductor device in a sealed package |
| US3931635A (en) * | 1973-06-12 | 1976-01-06 | Allmanna Svenska Elektriska Aktiebolaget | Semiconductor device with a control electrode in pressure contact with the semiconductor disc |
| US4956696A (en) * | 1989-08-24 | 1990-09-11 | Sundstrand Corporation | Compression loaded semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1514593B1 (en) | 1970-11-26 |
| CH434482A (en) | 1967-04-30 |
| DE1234326B (en) | 1967-02-16 |
| DE1261603B (en) | 1968-02-22 |
| GB1164465A (en) | 1969-09-17 |
| NL6613255A (en) | 1967-03-31 |
| CH449124A (en) | 1967-12-31 |
| NL6413471A (en) | 1965-09-27 |
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