GB1164465A - Controllable Semiconductor Rectifiers - Google Patents

Controllable Semiconductor Rectifiers

Info

Publication number
GB1164465A
GB1164465A GB4269866A GB4269866A GB1164465A GB 1164465 A GB1164465 A GB 1164465A GB 4269866 A GB4269866 A GB 4269866A GB 4269866 A GB4269866 A GB 4269866A GB 1164465 A GB1164465 A GB 1164465A
Authority
GB
United Kingdom
Prior art keywords
apertures
extra
aperture
control electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4269866A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1164465A publication Critical patent/GB1164465A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,164,465. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. 23 Sept., 1966 [30 Sept., 1965], No. 42698/66. Heading H1K. A PNPN controlled rectifier in which the control electrode contacts an inner layer of the PNPN structure through an aperture in the adjacent outer layer has one or more extra apertures in this outer layer. The or each extra aperture extends from the periphery inwards over a length between one-fifth and one-half of the maximum dimension of the layer, and the part or parts of the inner layer exposed by such apertures have an uncompensated charge carrier concentration of not less than 3 x 10<SP>17</SP> cm.<SP>-3</SP>. The structure is otherwise generally similar to that of the device to which Specification 1,064,522 relates except that, whereas in the prior patent the control electrode aperture is elongate, in the present case it is not necessarily so. Each extra aperture is however elongate. Figs. 4 and 5 show two alternative forms in plan. In each, 10 is the control electrode contacting an inner layer 3, and 11 are the extra apertures in the outer layer 8. The outer open ends of the apertures 11 may be short circuited by deposited, e.g. gold, coatings (not shown).
GB4269866A 1963-08-03 1966-09-23 Controllable Semiconductor Rectifiers Expired GB1164465A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE1963S0086530 DE1234326B (en) 1963-08-03 1963-08-03 Controllable rectifier with a monocrystalline semiconductor body and four zones of alternating conduction types
DE1964S0090194 DE1261603B (en) 1963-08-03 1964-03-25 Controllable semiconductor component
DES0099845 1965-09-30

Publications (1)

Publication Number Publication Date
GB1164465A true GB1164465A (en) 1969-09-17

Family

ID=27212843

Family Applications (2)

Application Number Title Priority Date Filing Date
GB3146664A Expired GB1064522A (en) 1963-08-03 1964-08-04 Controllable semi-conductor rectifiers
GB4269866A Expired GB1164465A (en) 1963-08-03 1966-09-23 Controllable Semiconductor Rectifiers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB3146664A Expired GB1064522A (en) 1963-08-03 1964-08-04 Controllable semi-conductor rectifiers

Country Status (4)

Country Link
CH (2) CH434482A (en)
DE (3) DE1234326B (en)
GB (2) GB1064522A (en)
NL (2) NL6413471A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
US3489957A (en) * 1967-09-07 1970-01-13 Power Semiconductors Inc Semiconductor device in a sealed package
US3599057A (en) * 1969-02-03 1971-08-10 Gen Electric Semiconductor device with a resilient lead construction
US3964090A (en) * 1971-12-24 1976-06-15 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. Semiconductor controlled rectifier
SE373689B (en) * 1973-06-12 1975-02-10 Asea Ab SEMICONDUCTOR DEVICE CONSISTING OF A THYRISTOR WITH CONTROL POWER, WHICH SEMICONDUCTOR DISC IS INCLUDED IN A BOX
FR2254880B1 (en) * 1973-12-12 1978-11-10 Alsthom Cgee
DE2422748C3 (en) * 1974-05-10 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4956696A (en) * 1989-08-24 1990-09-11 Sundstrand Corporation Compression loaded semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1132247B (en) * 1959-01-30 1962-06-28 Siemens Ag Controlled four-layer triode with four semiconductor layers of alternating conductivity type
FR1250857A (en) * 1959-02-26 1961-01-13 Westinghouse Electric Corp New layout of semiconductor devices
US2988677A (en) * 1959-05-01 1961-06-13 Ibm Negative resistance semiconductor device structure
DE1103389B (en) * 1959-10-14 1961-03-30 Siemens Ag Switching arrangement with a four-layer semiconductor arrangement
US3189800A (en) * 1959-12-14 1965-06-15 Westinghouse Electric Corp Multi-region two-terminal semiconductor device
FR1279792A (en) * 1960-02-08 1961-12-22 Pacific Semiconductors Composite transistor
DE1133038B (en) * 1960-05-10 1962-07-12 Siemens Ag Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type
US3094633A (en) * 1960-09-29 1963-06-18 Itt Semiconductor multiplanar rectifying junction diode
FR1342994A (en) * 1961-10-06 1963-11-15 Westinghouse Electric Corp Semiconductor switches

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion

Also Published As

Publication number Publication date
DE1514593B1 (en) 1970-11-26
GB1064522A (en) 1967-04-05
CH434482A (en) 1967-04-30
DE1234326B (en) 1967-02-16
DE1261603B (en) 1968-02-22
NL6613255A (en) 1967-03-31
CH449124A (en) 1967-12-31
NL6413471A (en) 1965-09-27

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees