GB1293574A - Improvements in or relating to methods of depositing metal layers by electroplating - Google Patents
Improvements in or relating to methods of depositing metal layers by electroplatingInfo
- Publication number
- GB1293574A GB1293574A GB5852669A GB5852669A GB1293574A GB 1293574 A GB1293574 A GB 1293574A GB 5852669 A GB5852669 A GB 5852669A GB 5852669 A GB5852669 A GB 5852669A GB 1293574 A GB1293574 A GB 1293574A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- aluminium
- gold
- electroplating
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1293574 Semi-conductor devices ASSOCIATED ELECTRICAL INDUSTRIES Ltd 1 Dec 1970 [1 Dec 1969] 58526/69 Heading H1K [Also in Division C7] A semi-conductor microwave diode of planar form comprises a wafer 2 of N-type germanium, a coating 1 of silicon dioxide containing an aperture overlaying which are successively deposited layers of aluminium 4, titanium 5 (e.g. by evaporation) and gold 7 (by electroplating). The configuration of the gold layer may be such as to provide an electrode or a beam lead. The structure may be treated to cause diffusion of aluminium from the layer 4 into the germanium to form a P-type region. In alternative embodiments the aluminium layer may be omitted, or a metal other than gold may be used for the layer 7, and the titanium layer be deleted, the completed device being of the metal-to-semiconductor junction type. A plurality of devices may be produced on a single wafer which is subsequently cut up to form single devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5852669A GB1293574A (en) | 1969-12-01 | 1969-12-01 | Improvements in or relating to methods of depositing metal layers by electroplating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5852669A GB1293574A (en) | 1969-12-01 | 1969-12-01 | Improvements in or relating to methods of depositing metal layers by electroplating |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1293574A true GB1293574A (en) | 1972-10-18 |
Family
ID=10481824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5852669A Expired GB1293574A (en) | 1969-12-01 | 1969-12-01 | Improvements in or relating to methods of depositing metal layers by electroplating |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1293574A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4175010A (en) * | 1977-04-18 | 1979-11-20 | U.S. Philips Corporation | Method of reinforcing a conductive base pattern by electroplating and device obtained by means of the method |
-
1969
- 1969-12-01 GB GB5852669A patent/GB1293574A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4175010A (en) * | 1977-04-18 | 1979-11-20 | U.S. Philips Corporation | Method of reinforcing a conductive base pattern by electroplating and device obtained by means of the method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |