DE1255820B - Verfahren zur Kontaktierung eines Koerpers aus einem halbleitenden Selelid oder Tellurid eines zweiwertigen Metalls - Google Patents

Verfahren zur Kontaktierung eines Koerpers aus einem halbleitenden Selelid oder Tellurid eines zweiwertigen Metalls

Info

Publication number
DE1255820B
DE1255820B DEN11528A DEN0011528A DE1255820B DE 1255820 B DE1255820 B DE 1255820B DE N11528 A DEN11528 A DE N11528A DE N0011528 A DEN0011528 A DE N0011528A DE 1255820 B DE1255820 B DE 1255820B
Authority
DE
Germany
Prior art keywords
solution
layer
metal
contact
telluride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN11528A
Other languages
German (de)
English (en)
Inventor
Dirk De Nobel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1255820B publication Critical patent/DE1255820B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrolytic Production Of Metals (AREA)
DEN11528A 1954-12-06 1955-12-02 Verfahren zur Kontaktierung eines Koerpers aus einem halbleitenden Selelid oder Tellurid eines zweiwertigen Metalls Pending DE1255820B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL354169X 1954-12-06

Publications (1)

Publication Number Publication Date
DE1255820B true DE1255820B (de) 1967-12-07

Family

ID=19785152

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN11528A Pending DE1255820B (de) 1954-12-06 1955-12-02 Verfahren zur Kontaktierung eines Koerpers aus einem halbleitenden Selelid oder Tellurid eines zweiwertigen Metalls

Country Status (7)

Country Link
US (1) US2865793A (enrdf_load_stackoverflow)
BE (1) BE543390A (enrdf_load_stackoverflow)
CH (1) CH354169A (enrdf_load_stackoverflow)
DE (1) DE1255820B (enrdf_load_stackoverflow)
FR (1) FR1143213A (enrdf_load_stackoverflow)
GB (1) GB800557A (enrdf_load_stackoverflow)
NL (2) NL192972A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
NL122459C (enrdf_load_stackoverflow) * 1960-05-13
US3208835A (en) * 1961-04-27 1965-09-28 Westinghouse Electric Corp Thermoelectric members
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US4468685A (en) * 1980-03-27 1984-08-28 Farrow Robin F C Infrared detector using grey tin
FR2844918B1 (fr) * 2002-09-20 2005-07-01 Commissariat Energie Atomique Procede de fabrication d'electrodes sur un materiau semi- conducteur de type ii-vi ou sur un compose de ce materiau

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2560979A (en) * 1948-07-30 1951-07-17 Padio Corp Of America Chemical deposition of metallic films
DE1000533B (de) 1954-10-22 1957-01-10 Siemens Ag Verfahren zur Kontaktierung eines Halbleiterkoerpers
DE1052575B (de) 1954-06-23 1959-03-12 Siemens Ag Verfahren zur Herstellung von Kontaktierungen auf Halbleiterkoerpern fuer Halbleiteranordnungen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677715A (en) * 1950-09-23 1954-05-04 Alois Vogt Dr Optical-electrical conversion device comprising a light-permeable metal electrode
US2710813A (en) * 1951-01-02 1955-06-14 Rca Corp Cadmium selenide-zinc selenide photoconductive electrode and method of producing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2560979A (en) * 1948-07-30 1951-07-17 Padio Corp Of America Chemical deposition of metallic films
DE1052575B (de) 1954-06-23 1959-03-12 Siemens Ag Verfahren zur Herstellung von Kontaktierungen auf Halbleiterkoerpern fuer Halbleiteranordnungen
DE1000533B (de) 1954-10-22 1957-01-10 Siemens Ag Verfahren zur Kontaktierung eines Halbleiterkoerpers

Also Published As

Publication number Publication date
BE543390A (enrdf_load_stackoverflow)
NL192972A (enrdf_load_stackoverflow)
NL99205C (enrdf_load_stackoverflow)
CH354169A (de) 1961-05-15
US2865793A (en) 1958-12-23
GB800557A (en) 1958-08-27
FR1143213A (fr) 1957-09-27

Similar Documents

Publication Publication Date Title
DE3135993A1 (de) "verfahren zur herstellung von kontakten mit geringem widerstand in halbleitervorrichtungen"
DE1200439B (de) Verfahren zum Herstellen eines elektrischen Kontaktes an einem oxydueberzogenen Halbleiterplaettchen
DE112013002780T5 (de) Piezoelektrische Vorrichtung
DE102007005161B4 (de) Verfahren zur Metallisierung von Substraten
DE1255820B (de) Verfahren zur Kontaktierung eines Koerpers aus einem halbleitenden Selelid oder Tellurid eines zweiwertigen Metalls
DE3312053A1 (de) Verfahren zum verhindern von kurz- oder nebenschluessen in einer grossflaechigen duennschicht-solarzelle
DE112016006558T5 (de) Verfahren zum Bilden einer CdTe-Dünnschicht-Solarzelle einschließlich eines Metalldotierungsschritts und eines Systems zum Durchführen des Metalldotierungsschritts
DE3339417C2 (de) Dünnschicht-Solarzellen
DE1614218C3 (enrdf_load_stackoverflow)
DE2360030B2 (de) Verfahren zum Herstellen einer Schottky-Diode
DE3006716A1 (de) Verfahren zum elektroplattieren
DE112016006557B4 (de) Verfahren zur Herstellung einer CdTe-Dünnschichtsolarzelle
DE1002472B (de) Verfahren zum Anloeten von Elektroden an einen Halbleiter
DE1816748A1 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE3542116C2 (enrdf_load_stackoverflow)
DE2709385A1 (de) Elektrolytische abscheidungszelle
DE2126142C3 (de) Verfahren zur elektrolytischen Herstellung von Kathodenkupfer
DE1194504C2 (de) Verfahren zur Herstellung von Halbleiter-anordnungen
DE2633038A1 (de) Elektrolumineszierende vorrichtung
DE501228C (de) Verfahren zur Herstellung von Gleichrichterelementen zu Trockengleichrichtern mit Selenschicht
DE1199897B (de) Verfahren zur Herstellung einer Sperrschicht in einem n-leitenden Cadmiumsulfidkoerper
DE763103C (de) Verfahren zum Aufbringen einer zusammenhaengenden, pulverfoermigen Schicht auf einen Metalltraeger in einem Sperrschichtelektrodensystem und gemaess diesem Verfahren hergestelltes Sperrschichtelektroden-system (Gleichrichter, Photozelle)
DE2128360A1 (de) Verfahren zur Bildung von ohmschen Kontakten an Metall Isolator Halbleiter bauteilen
DE2540999B2 (de) Elektrischer Steckkontakt mit einer Kontaktschicht aus einer Silber-Palladium-Legierung
DE977513C (de) Verfahren zur Beseitigung eines Sperreffektes von flaechenhaften Kontaktelektroden an Halbleiterkoerpern aus Germanium oder Silizium