GB800557A - Improvements in or relating to a method of treating the surface of a semi-conductive body consisting of a selenide or a telluride of a bivalent metal - Google Patents

Improvements in or relating to a method of treating the surface of a semi-conductive body consisting of a selenide or a telluride of a bivalent metal

Info

Publication number
GB800557A
GB800557A GB34561/55A GB3456155A GB800557A GB 800557 A GB800557 A GB 800557A GB 34561/55 A GB34561/55 A GB 34561/55A GB 3456155 A GB3456155 A GB 3456155A GB 800557 A GB800557 A GB 800557A
Authority
GB
United Kingdom
Prior art keywords
noble metal
metal
semi
bivalent
telluride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34561/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB800557A publication Critical patent/GB800557A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

A noble metal layer is applied to a semi-conductive body of a selenide or telluride of a bivalent metal (noble metal is defined as a metal which is higher in the electromotive series than the bivalent metal) by contacting the body with a solution of a salt of a noble metal so that the noble metal precipitates on the body and the bivalent metal is dissolved. The noble metal may subsequently be removed and a different noble metal applied as by evaporation. Bivalent metals referred to are Zn, Cd, Hg, Sn and Pb, and the noble metal may be Ag, Au, Hg, Pt or Rh. The examples disclose the coating of CdTe and HgSe bodies, and salts used are AgNO3, AuCl3, PtCl4 and RhCl3: one example refers to the removal of an Au layer from CdTe by treatment with a KCN solution, and then coating with Ir by evaporation. The semi-conductive body may be used to provide a rectifier, transistor, photo-conductive or photo-voltaic cell.
GB34561/55A 1954-12-06 1955-12-02 Improvements in or relating to a method of treating the surface of a semi-conductive body consisting of a selenide or a telluride of a bivalent metal Expired GB800557A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL354169X 1954-12-06

Publications (1)

Publication Number Publication Date
GB800557A true GB800557A (en) 1958-08-27

Family

ID=19785152

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34561/55A Expired GB800557A (en) 1954-12-06 1955-12-02 Improvements in or relating to a method of treating the surface of a semi-conductive body consisting of a selenide or a telluride of a bivalent metal

Country Status (7)

Country Link
US (1) US2865793A (en)
BE (1) BE543390A (en)
CH (1) CH354169A (en)
DE (1) DE1255820B (en)
FR (1) FR1143213A (en)
GB (1) GB800557A (en)
NL (2) NL99205C (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
NL251613A (en) * 1960-05-13
US3208835A (en) * 1961-04-27 1965-09-28 Westinghouse Electric Corp Thermoelectric members
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US4468685A (en) * 1980-03-27 1984-08-28 Farrow Robin F C Infrared detector using grey tin
FR2844918B1 (en) * 2002-09-20 2005-07-01 Commissariat Energie Atomique PROCESS FOR PRODUCING ELECTRODES ON SEMI-CONDUCTOR MATERIAL TYPE II-VI OR A COMPOUND THEREOF

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2560979A (en) * 1948-07-30 1951-07-17 Padio Corp Of America Chemical deposition of metallic films
US2677715A (en) * 1950-09-23 1954-05-04 Alois Vogt Dr Optical-electrical conversion device comprising a light-permeable metal electrode
US2710813A (en) * 1951-01-02 1955-06-14 Rca Corp Cadmium selenide-zinc selenide photoconductive electrode and method of producing same

Also Published As

Publication number Publication date
DE1255820B (en) 1967-12-07
FR1143213A (en) 1957-09-27
NL99205C (en)
BE543390A (en)
CH354169A (en) 1961-05-15
NL192972A (en)
US2865793A (en) 1958-12-23

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