FR1143213A - Method of applying precious metal layers to a semiconductor body - Google Patents

Method of applying precious metal layers to a semiconductor body

Info

Publication number
FR1143213A
FR1143213A FR1143213DA FR1143213A FR 1143213 A FR1143213 A FR 1143213A FR 1143213D A FR1143213D A FR 1143213DA FR 1143213 A FR1143213 A FR 1143213A
Authority
FR
France
Prior art keywords
metal layers
semiconductor body
precious metal
applying precious
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1143213A publication Critical patent/FR1143213A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
FR1143213D 1954-12-06 1955-12-05 Method of applying precious metal layers to a semiconductor body Expired FR1143213A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL354169X 1954-12-06

Publications (1)

Publication Number Publication Date
FR1143213A true FR1143213A (en) 1957-09-27

Family

ID=19785152

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1143213D Expired FR1143213A (en) 1954-12-06 1955-12-05 Method of applying precious metal layers to a semiconductor body

Country Status (7)

Country Link
US (1) US2865793A (en)
BE (1) BE543390A (en)
CH (1) CH354169A (en)
DE (1) DE1255820B (en)
FR (1) FR1143213A (en)
GB (1) GB800557A (en)
NL (2) NL192972A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844918A1 (en) * 2002-09-20 2004-03-26 Commissariat Energie Atomique Fabrication of a metal electrode on a type II-VI semiconductor material by electrochemical deposition from a solution of the metal chloride in hydrochloric acid for radiation detectors

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
NL251613A (en) * 1960-05-13
US3208835A (en) * 1961-04-27 1965-09-28 Westinghouse Electric Corp Thermoelectric members
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US4468685A (en) * 1980-03-27 1984-08-28 Farrow Robin F C Infrared detector using grey tin

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2560979A (en) * 1948-07-30 1951-07-17 Padio Corp Of America Chemical deposition of metallic films
US2677715A (en) * 1950-09-23 1954-05-04 Alois Vogt Dr Optical-electrical conversion device comprising a light-permeable metal electrode
US2710813A (en) * 1951-01-02 1955-06-14 Rca Corp Cadmium selenide-zinc selenide photoconductive electrode and method of producing same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844918A1 (en) * 2002-09-20 2004-03-26 Commissariat Energie Atomique Fabrication of a metal electrode on a type II-VI semiconductor material by electrochemical deposition from a solution of the metal chloride in hydrochloric acid for radiation detectors
WO2004027854A2 (en) * 2002-09-20 2004-04-01 Commissariat A L'energie Atomique Method for the production of electrodes on a type ii or vi semiconductor material or on a compound of said material
WO2004027854A3 (en) * 2002-09-20 2004-07-08 Commissariat Energie Atomique Method for the production of electrodes on a type ii or vi semiconductor material or on a compound of said material
US7553746B2 (en) 2002-09-20 2009-06-30 Commissariat A L'energie Atomique Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material

Also Published As

Publication number Publication date
US2865793A (en) 1958-12-23
BE543390A (en)
NL192972A (en)
GB800557A (en) 1958-08-27
CH354169A (en) 1961-05-15
DE1255820B (en) 1967-12-07
NL99205C (en)

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