DE1255717B - Speicherschaltung mit Dynatron-Charakter aufweisenden, gerichteten Widerstandselementen - Google Patents
Speicherschaltung mit Dynatron-Charakter aufweisenden, gerichteten WiderstandselementenInfo
- Publication number
- DE1255717B DE1255717B DEN19529A DEN0019529A DE1255717B DE 1255717 B DE1255717 B DE 1255717B DE N19529 A DEN19529 A DE N19529A DE N0019529 A DEN0019529 A DE N0019529A DE 1255717 B DE1255717 B DE 1255717B
- Authority
- DE
- Germany
- Prior art keywords
- circuit
- resistance elements
- memory circuit
- memory
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims description 28
- 230000001747 exhibiting effect Effects 0.000 title 1
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000004146 energy storage Methods 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 230000005284 excitation Effects 0.000 description 33
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
- H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T74/00—Machine element or mechanism
- Y10T74/19—Gearing
- Y10T74/19642—Directly cooperating gears
- Y10T74/19679—Spur
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Devices For Supply Of Signal Current (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP439760 | 1960-02-15 | ||
| JP439860 | 1960-02-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1255717B true DE1255717B (de) | 1967-12-07 |
Family
ID=26338146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN19529A Pending DE1255717B (de) | 1960-02-15 | 1961-02-01 | Speicherschaltung mit Dynatron-Charakter aufweisenden, gerichteten Widerstandselementen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3198957A (en, 2012) |
| CH (1) | CH396093A (en, 2012) |
| DE (1) | DE1255717B (en, 2012) |
| FR (1) | FR1280323A (en, 2012) |
| GB (1) | GB924203A (en, 2012) |
| NL (1) | NL261224A (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3319078A (en) * | 1964-03-30 | 1967-05-09 | Sylvania Electric Prod | Pulse burst generator employing plural locked pair tunnel diode networks and delay means |
| US3445682A (en) * | 1965-12-20 | 1969-05-20 | Ibm | Signals employing a tristable tunnel diode sensing circuit |
| US4376986A (en) * | 1981-09-30 | 1983-03-15 | Burroughs Corporation | Double Lambda diode memory cell |
| GB8510393D0 (en) * | 1985-04-24 | 1993-05-26 | British Aerospace | Radiation hardened circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1100692B (de) | 1959-01-27 | 1961-03-02 | Rca Corp | Bistabile Schaltung |
| DE1227944B (de) | 1959-09-08 | 1966-11-03 | Rca Corp | Speichervorrichtung mit einer bistabil vorgespannten Tunneldiode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2614140A (en) * | 1950-05-26 | 1952-10-14 | Bell Telephone Labor Inc | Trigger circuit |
| US2986724A (en) * | 1959-05-27 | 1961-05-30 | Bell Telephone Labor Inc | Negative resistance oscillator |
| US3138723A (en) * | 1959-11-23 | 1964-06-23 | Zh Parametron Kenkyujo | Dynamic storage circuit utilizing two tunnel diodes and reflective delay line |
-
0
- NL NL261224D patent/NL261224A/xx unknown
-
1961
- 1961-01-25 GB GB2983/61A patent/GB924203A/en not_active Expired
- 1961-01-31 US US86134A patent/US3198957A/en not_active Expired - Lifetime
- 1961-02-01 DE DEN19529A patent/DE1255717B/de active Pending
- 1961-02-10 FR FR852365A patent/FR1280323A/fr not_active Expired
- 1961-02-14 CH CH173361A patent/CH396093A/de unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1100692B (de) | 1959-01-27 | 1961-03-02 | Rca Corp | Bistabile Schaltung |
| DE1227944B (de) | 1959-09-08 | 1966-11-03 | Rca Corp | Speichervorrichtung mit einer bistabil vorgespannten Tunneldiode |
Also Published As
| Publication number | Publication date |
|---|---|
| CH396093A (de) | 1965-07-31 |
| GB924203A (en) | 1963-04-24 |
| US3198957A (en) | 1965-08-03 |
| NL261224A (en, 2012) | |
| FR1280323A (fr) | 1961-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 |