DE1251722B - Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial - Google Patents

Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial

Info

Publication number
DE1251722B
DE1251722B DES89316A DE1251722DA DE1251722B DE 1251722 B DE1251722 B DE 1251722B DE S89316 A DES89316 A DE S89316A DE 1251722D A DE1251722D A DE 1251722DA DE 1251722 B DE1251722 B DE 1251722B
Authority
DE
Germany
Prior art keywords
phosphorus
semiconductor material
nitrilohalide
reaction
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DES89316A
Other languages
German (de)
English (en)
Inventor
Erlangen Dr rer nat Klaus Wartenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE1251722B publication Critical patent/DE1251722B/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
DES89316A 1964-02-01 Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial Withdrawn DE1251722B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0089316 1964-02-01

Publications (1)

Publication Number Publication Date
DE1251722B true DE1251722B (de) 1967-10-12

Family

ID=7515035

Family Applications (1)

Application Number Title Priority Date Filing Date
DES89316A Withdrawn DE1251722B (de) 1964-02-01 Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial

Country Status (6)

Country Link
US (1) US3360408A (US20080094685A1-20080424-C00004.png)
BE (1) BE658934A (US20080094685A1-20080424-C00004.png)
CH (1) CH464865A (US20080094685A1-20080424-C00004.png)
DE (1) DE1251722B (US20080094685A1-20080424-C00004.png)
GB (1) GB1046913A (US20080094685A1-20080424-C00004.png)
NL (1) NL6501089A (US20080094685A1-20080424-C00004.png)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3459668A (en) * 1965-05-21 1969-08-05 Honeywell Inc Semiconductor method and apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited

Also Published As

Publication number Publication date
BE658934A (US20080094685A1-20080424-C00004.png) 1965-07-28
CH464865A (de) 1968-11-15
NL6501089A (US20080094685A1-20080424-C00004.png) 1965-08-02
US3360408A (en) 1967-12-26
GB1046913A (en) 1966-10-26

Similar Documents

Publication Publication Date Title
DE1235266B (de) Verfahren zum Herstellen reinster kristalliner Stoffe, insbesondere fuer Halbleiterzwecke
DE1187098B (de) Verfahren zum Herstellen von Koerpern aus hochgereinigtem Halbleitermaterial
DE1025845B (de) Verfahren zur Herstellung von reinstem Silicium
DE1150366B (de) Verfahren zur Herstellung von Reinstsilicium
DE1188555B (de) Verfahren zur Herstellung hochreiner kristalliner Koerper aus Nitriden, Phosphiden oder Arseniden der III. Hauptgruppe des Periodensystems
DE1251722B (de) Verfahren zum Herstellen von mit Phos phor dotiertem Halbleitermaterial
DE1220391B (de) Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper
DE1198787B (de) Verfahren zur Gewinnung von reinstem Silicium, Siliciumkarbid oder Germanium aus ihren gasfoermigen Verbindungen
DE2116746C3 (de) Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung
DE1215665B (de) Verfahren zum Herstellen von hochreinem Siliziumkarbid
AT212879B (de) Verfahren zur Oberflächenbehandlung von Körpern aus hochgereinigtem Halbleitermaterial
DE1232558B (de) Verfahren zum Herstellen von kristallinem, insbesondere einkristallinem Bor
DE1694504C3 (de) Verfahren zum epitaktischen Aufwachsen von Siliziumcarbid
AT213846B (de) Verfahren zur Herstellung von kristallinem, sehr reinem Siliziumkarbid, insbesondere für Halbleiter
DE1124028B (de) Verfahren zum Herstellen von einkristallinem Silicium
DE1207922B (de) Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium
DE1251284B (de) Verfahren zur Herstellung von aus Halbleitermaterial bestehenden Einkristallen durch thermische Zersetzung einer gasförmigen Verbindung
DE1222478B (de) Verfahren zur Herstellung von hochreinen, kristallinen Carbiden, Nitriden oder Boriden durch Sublimation
DE1195729B (de) Verfahren zum Herstellen von Koerpern aus hochreinem Siliziumkarbid
AT250441B (de) Verfahren zum Herstellen von kristallinem vorzugsweise einkristallinem Silizium
DE1205950B (de) Halterung in einer Vorrichtung zur Abscheidung von Halbleitermaterial aus der Gasphase auf stabfoermigen Traegern aus Halbleitermaterial gleicher Gitterstruktur und Verfahren zu ihrer Herstellung
DE1544308C3 (de) Verfahren zum epitaktischem Abscheiden dotierter Halbleiterschichten
DE1268600B (de) Verfahren zum epitaktischen Abscheiden einer einkristallinen, insbesondere dotiertenHalbleiterschicht
DE1139812B (de) Vorrichtung zur Gewinnung stabfoermiger Halbleiterkoerper und Verfahren zum Betrieb dieser Vorrichtung
DE1245334B (de) Vorrichtung zur Herstellung von Halbleitereinkristallen durch Abscheiden aus der Gasphase

Legal Events

Date Code Title Description
E771 Valid patent as to the heymanns-index 1977, willingness to grant licences
EHJ Ceased/non-payment of the annual fee