DE1230917B - Vorrichtung zum Legieren von Halbleiterkristallen - Google Patents
Vorrichtung zum Legieren von HalbleiterkristallenInfo
- Publication number
- DE1230917B DE1230917B DET21690A DET0021690A DE1230917B DE 1230917 B DE1230917 B DE 1230917B DE T21690 A DET21690 A DE T21690A DE T0021690 A DET0021690 A DE T0021690A DE 1230917 B DE1230917 B DE 1230917B
- Authority
- DE
- Germany
- Prior art keywords
- alloy
- alloy material
- semiconductor crystal
- lever
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000013078 crystal Substances 0.000 title claims description 33
- 238000005275 alloying Methods 0.000 title claims description 17
- 239000000956 alloy Substances 0.000 claims description 56
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 239000006187 pill Substances 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
- 230000001960 triggered effect Effects 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET21690A DE1230917B (de) | 1962-03-03 | 1962-03-03 | Vorrichtung zum Legieren von Halbleiterkristallen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET21690A DE1230917B (de) | 1962-03-03 | 1962-03-03 | Vorrichtung zum Legieren von Halbleiterkristallen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1230917B true DE1230917B (de) | 1966-12-22 |
| DE1230917C2 DE1230917C2 (cs) | 1967-08-24 |
Family
ID=7550221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET21690A Granted DE1230917B (de) | 1962-03-03 | 1962-03-03 | Vorrichtung zum Legieren von Halbleiterkristallen |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1230917B (cs) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2900287A (en) * | 1958-07-14 | 1959-08-18 | Honeywell Regulator Co | Method of processing semiconductor devices |
| GB879492A (en) * | 1958-09-16 | 1961-10-11 | Westingiiouse Electric Corp | Improvements in or relating to the manufacture of semiconductor devices |
-
1962
- 1962-03-03 DE DET21690A patent/DE1230917B/de active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2900287A (en) * | 1958-07-14 | 1959-08-18 | Honeywell Regulator Co | Method of processing semiconductor devices |
| GB879492A (en) * | 1958-09-16 | 1961-10-11 | Westingiiouse Electric Corp | Improvements in or relating to the manufacture of semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1230917C2 (cs) | 1967-08-24 |
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