DE1230917C2 - - Google Patents

Info

Publication number
DE1230917C2
DE1230917C2 DE1962T0021690 DET0021690A DE1230917C2 DE 1230917 C2 DE1230917 C2 DE 1230917C2 DE 1962T0021690 DE1962T0021690 DE 1962T0021690 DE T0021690 A DET0021690 A DE T0021690A DE 1230917 C2 DE1230917 C2 DE 1230917C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1962T0021690
Other languages
German (de)
Other versions
DE1230917B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DET21690A priority Critical patent/DE1230917B/de
Publication of DE1230917B publication Critical patent/DE1230917B/de
Application granted granted Critical
Publication of DE1230917C2 publication Critical patent/DE1230917C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DET21690A 1962-03-03 1962-03-03 Vorrichtung zum Legieren von Halbleiterkristallen Granted DE1230917B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DET21690A DE1230917B (de) 1962-03-03 1962-03-03 Vorrichtung zum Legieren von Halbleiterkristallen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET21690A DE1230917B (de) 1962-03-03 1962-03-03 Vorrichtung zum Legieren von Halbleiterkristallen

Publications (2)

Publication Number Publication Date
DE1230917B DE1230917B (de) 1966-12-22
DE1230917C2 true DE1230917C2 (cs) 1967-08-24

Family

ID=7550221

Family Applications (1)

Application Number Title Priority Date Filing Date
DET21690A Granted DE1230917B (de) 1962-03-03 1962-03-03 Vorrichtung zum Legieren von Halbleiterkristallen

Country Status (1)

Country Link
DE (1) DE1230917B (cs)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900287A (en) * 1958-07-14 1959-08-18 Honeywell Regulator Co Method of processing semiconductor devices
US3073006A (en) * 1958-09-16 1963-01-15 Westinghouse Electric Corp Method and apparatus for the fabrication of alloyed transistors

Also Published As

Publication number Publication date
DE1230917B (de) 1966-12-22

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