DE1211722B - Halbleiterbauelement aus einer halbleitenden Molekuelverbindung zwischen Lewis-Saeuren und -Basen - Google Patents

Halbleiterbauelement aus einer halbleitenden Molekuelverbindung zwischen Lewis-Saeuren und -Basen

Info

Publication number
DE1211722B
DE1211722B DEP26499A DEP0026499A DE1211722B DE 1211722 B DE1211722 B DE 1211722B DE P26499 A DEP26499 A DE P26499A DE P0026499 A DEP0026499 A DE P0026499A DE 1211722 B DE1211722 B DE 1211722B
Authority
DE
Germany
Prior art keywords
semiconductor component
component according
compound
tetracyanoquinodimethane
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEP26499A
Other languages
German (de)
English (en)
Inventor
Radnor Green
Raymond Glen Kepler
Monroe Scharff Sadler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of DE1211722B publication Critical patent/DE1211722B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/121—Charge-transfer complexes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/049—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of organic or organo-metal substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/21—Temperature-sensitive devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/08—Amplitude modulation by means of variable impedance element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
DEP26499A 1960-02-02 1961-02-01 Halbleiterbauelement aus einer halbleitenden Molekuelverbindung zwischen Lewis-Saeuren und -Basen Pending DE1211722B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6167A US3252061A (en) 1960-02-02 1960-02-02 Circuit components

Publications (1)

Publication Number Publication Date
DE1211722B true DE1211722B (de) 1966-03-03

Family

ID=21719626

Family Applications (1)

Application Number Title Priority Date Filing Date
DEP26499A Pending DE1211722B (de) 1960-02-02 1961-02-01 Halbleiterbauelement aus einer halbleitenden Molekuelverbindung zwischen Lewis-Saeuren und -Basen

Country Status (8)

Country Link
US (1) US3252061A (OSRAM)
JP (1) JPS405464B1 (OSRAM)
BE (1) BE599786A (OSRAM)
CH (1) CH403990A (OSRAM)
DE (1) DE1211722B (OSRAM)
FR (1) FR1285462A (OSRAM)
GB (1) GB937571A (OSRAM)
NL (1) NL260723A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779814A (en) * 1972-12-26 1973-12-18 Monsanto Co Thermoelectric devices utilizing electrically conducting organic salts
US3844843A (en) * 1973-01-02 1974-10-29 Philco Ford Corp Solar cell with organic semiconductor contained in a gel
EP1912260B1 (en) * 2006-10-13 2016-12-14 Acreo Swedish ICT AB A quantum dot thermistor structure and use thereof
EP3553795B1 (en) * 2018-04-09 2024-01-10 Mahle International GmbH Ptc thermistor element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1034273B (de) * 1952-07-29 1958-07-17 Nat Res Dev Halbleitervorrichtung, wie z. B. Transistor, Gleichrichter od. dgl.
DE1040132B (de) * 1953-12-23 1958-10-02 Siemens Ag Elektronischer, organischer Halbleiterkristall mit eingebauten Stoerstellen fuer Halbleiteranordnungen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL234638A (OSRAM) * 1957-12-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1034273B (de) * 1952-07-29 1958-07-17 Nat Res Dev Halbleitervorrichtung, wie z. B. Transistor, Gleichrichter od. dgl.
DE1040132B (de) * 1953-12-23 1958-10-02 Siemens Ag Elektronischer, organischer Halbleiterkristall mit eingebauten Stoerstellen fuer Halbleiteranordnungen

Also Published As

Publication number Publication date
FR1285462A (fr) 1962-02-23
US3252061A (en) 1966-05-17
NL260723A (OSRAM) 1964-05-11
JPS405464B1 (OSRAM) 1965-03-20
GB937571A (en) 1963-09-25
CH403990A (de) 1965-12-15
BE599786A (fr) 1961-05-29

Similar Documents

Publication Publication Date Title
DE112007000789B4 (de) Verwendung von Bora-tetraazepentalenen
DE102017104262A1 (de) Halbleiterbauelement mit antistatischem die-befestigungsmaterial
CH425922A (de) Elektrisches Bauelement mit einem Festkörper, dessen thermomagnetische Eigenschaften ausgenutzt werden
DE68911465T2 (de) Leitfähige Flüssigkristalle.
CH407265A (de) Thermoelektrischer Wandler
DE69016633T2 (de) CVD-Anlage und Verfahren zum Bilden einer Dünnschicht.
DE2641742B2 (de) 5,6,11,12-Tetrathiotetracen-Jod-Komplex, Verfahren zu seiner Herstellung und dessen Verwendung als organisches Leiterelement
DE1519770B2 (de) Verfahren zum insbesondere epitaktischen aufwachsen kristalli ner schichten
DE69318045T2 (de) Elektrisch leitendes alternierendes Copolymer und Verfahren zur Herstellung eines derartigen Copolymers
DE2329492C3 (de) Organisches Halbleitermaterial
DE2000088A1 (de) Anisotropes Thermoelement
US3252061A (en) Circuit components
DE1162486B (de) Leistungs-Halbleitergleichrichter zur Verwendung bis zu Temperaturen von etwa 1000íÒC mit einem Halbleiterkoerper aus kubischem Borphosphid
DE1619973C3 (de) Verfahren zur Herstellung von Halbleitermaterial durch Abscheiden aus der Gasphase
DE19546164A1 (de) Temperaturfühler
Krikor et al. Highly conducting iodine-doped poly (copper-yne) from phenylacetylene
DE1079353B (de) Magnetischer Sauerstoffmesser nach dem Hitzdrahtverfahren
DE876419C (de) Verfahren zum Herstellen von elektrischen und/oder mechanischen Verbindungen
DE910193C (de) Verfahren zur Herstellung eines gleichrichtenden, insbesondere lichtempfindlichen Halbleiterelements
EP0483679B1 (de) Supraleitendes Bauelement
Hadek Electron and Hole Conductivity of Donor‐Acceptor Complexes of Oligoanilinic Substances and Their Thermoelectric Properties
DE102017110949B3 (de) Thermoelektrisches Komposit
EP0100509B1 (de) Verfahren zur Herstellung elektrisch leitfähiger Polyarylen-Verbindungen mit elektronenanziehenden Seitengruppen und deren Verwendung in der Elektrotechnik und antistatischen Ausrüstung von Kunststoffen
DE1238987B (de) Halbleiterkoerper fuer Bauelemente mit richtungsabhaengigen elektrischen Eigenschaften
DE1464319B2 (de) Halbleitervorrichtung