DE1185151B - Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten - Google Patents

Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten

Info

Publication number
DE1185151B
DE1185151B DES71476A DES0071476A DE1185151B DE 1185151 B DE1185151 B DE 1185151B DE S71476 A DES71476 A DE S71476A DE S0071476 A DES0071476 A DE S0071476A DE 1185151 B DE1185151 B DE 1185151B
Authority
DE
Germany
Prior art keywords
carrier
semiconductor
deposition
shaped
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES71476A
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Guenther Dipl-Phys
Dr Rer Nat Erhard Si Dipl-Chem
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL270516D priority Critical patent/NL270516A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES71476A priority patent/DE1185151B/de
Priority to CH1139861A priority patent/CH426745A/de
Priority to GB42490/61A priority patent/GB939051A/en
Priority to FR880378A priority patent/FR1307109A/fr
Priority to US155691A priority patent/US3160521A/en
Publication of DE1185151B publication Critical patent/DE1185151B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DES71476A 1960-11-30 1960-11-30 Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten Pending DE1185151B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL270516D NL270516A (en:Method) 1960-11-30
DES71476A DE1185151B (de) 1960-11-30 1960-11-30 Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten
CH1139861A CH426745A (de) 1960-11-30 1961-10-02 Verfahren zum Herstellen von dünnen, einkristallinen halbleitenden Schichten
GB42490/61A GB939051A (en) 1960-11-30 1961-11-28 Improvements in or relating to layers of semi-conductor material
FR880378A FR1307109A (fr) 1960-11-30 1961-11-29 Procédé de fabrication de couches semi-conductrices monocristallines
US155691A US3160521A (en) 1960-11-30 1961-11-29 Method for producing monocrystalline layers of semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71476A DE1185151B (de) 1960-11-30 1960-11-30 Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten

Publications (1)

Publication Number Publication Date
DE1185151B true DE1185151B (de) 1965-01-14

Family

ID=7502501

Family Applications (1)

Application Number Title Priority Date Filing Date
DES71476A Pending DE1185151B (de) 1960-11-30 1960-11-30 Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten

Country Status (5)

Country Link
US (1) US3160521A (en:Method)
CH (1) CH426745A (en:Method)
DE (1) DE1185151B (en:Method)
GB (1) GB939051A (en:Method)
NL (1) NL270516A (en:Method)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251441B (en:Method) * 1962-06-20
FR1370724A (fr) * 1963-07-15 1964-08-28 Electronique & Automatisme Sa Procédé de réalisation de couches minces monocristallines
DE1444502B2 (de) * 1963-08-01 1970-01-08 IBM Deutschland Internationale Büro-Maschinen OmbH, 7032 Sindelfingen Verfahren zur Regelung der Schärfe von an Galliumarsenid-Einkristallen zu bildenden pn-übergängen
US3344054A (en) * 1964-03-02 1967-09-26 Schjeldahl Co G T Art of controlling sputtering and metal evaporation by means of a plane acceptor
US3366462A (en) * 1964-11-04 1968-01-30 Siemens Ag Method of producing monocrystalline semiconductor material
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
US3505107A (en) * 1966-01-03 1970-04-07 Texas Instruments Inc Vapor deposition of germanium semiconductor material
USB524765I5 (en:Method) * 1966-02-03 1900-01-01
US3455745A (en) * 1966-07-08 1969-07-15 Dow Corning Coating of objects with tetraboron silicide
US3900660A (en) * 1972-08-21 1975-08-19 Union Carbide Corp Manufacture of silicon metal from a mixture of chlorosilanes
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
EP0506146A2 (en) * 1980-04-10 1992-09-30 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
US4400715A (en) * 1980-11-19 1983-08-23 International Business Machines Corporation Thin film semiconductor device and method for manufacture
US4853076A (en) * 1983-12-29 1989-08-01 Massachusetts Institute Of Technology Semiconductor thin films
DE3404818A1 (de) * 1984-02-10 1985-08-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum erzeugen eines pn- ueberganges in einem nach dem durchlaufverfahren hergestellten siliziumband
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
JP5911478B2 (ja) * 2010-05-31 2016-04-27 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 単結晶シートの製造のための方法およびデバイス

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2880117A (en) * 1956-01-20 1959-03-31 Electronique & Automatisme Sa Method of manufacturing semiconducting materials

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2902350A (en) * 1954-12-21 1959-09-01 Rca Corp Method for single crystal growth
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2880117A (en) * 1956-01-20 1959-03-31 Electronique & Automatisme Sa Method of manufacturing semiconducting materials

Also Published As

Publication number Publication date
GB939051A (en) 1963-10-09
CH426745A (de) 1966-12-31
US3160521A (en) 1964-12-08
NL270516A (en:Method)

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