DE1176759B - Verfahren zum Herstellen von Halbleiteranordnungen - Google Patents
Verfahren zum Herstellen von HalbleiteranordnungenInfo
- Publication number
- DE1176759B DE1176759B DEN20832A DEN0020832A DE1176759B DE 1176759 B DE1176759 B DE 1176759B DE N20832 A DEN20832 A DE N20832A DE N0020832 A DEN0020832 A DE N0020832A DE 1176759 B DE1176759 B DE 1176759B
- Authority
- DE
- Germany
- Prior art keywords
- electrode material
- semiconductor body
- vapor pressure
- weight
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000007772 electrode material Substances 0.000 claims description 34
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C11/00—Alloys based on lead
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL258203 | 1960-11-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1176759B true DE1176759B (de) | 1964-08-27 |
Family
ID=19752711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN20832A Pending DE1176759B (de) | 1960-11-21 | 1961-11-17 | Verfahren zum Herstellen von Halbleiteranordnungen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3152373A (en, 2012) |
| CH (1) | CH413112A (en, 2012) |
| DE (1) | DE1176759B (en, 2012) |
| GB (1) | GB966594A (en, 2012) |
| NL (1) | NL258203A (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3279006A (en) * | 1963-12-30 | 1966-10-18 | Martin Metals Company | Method of preparing composite castings |
| US3436280A (en) * | 1965-06-30 | 1969-04-01 | Fujitsu Ltd | Method of producing a variable capacitance diode |
| DE1279646B (de) * | 1965-09-29 | 1968-10-10 | Siemens Ag | Verfahren zur Herstellung kristalliner Staebe aus halbleitenden Verbindungen |
| US3678986A (en) * | 1970-04-27 | 1972-07-25 | Siemens Ag | Method for manufacturing homogeneous bodies from semiconductor alloys |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1015937B (de) * | 1952-09-16 | 1957-09-19 | Rca Corp | Verfahren zur Herstellung von Halbleitern mit p-n-Schichten |
| AT212880B (de) * | 1958-02-22 | 1961-01-10 | Philips Nv | Verfahren und Legierform zum Aufschmelzen eines Kontaktes auf einen halbleitenden Körper |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB794128A (en) * | 1955-08-04 | 1958-04-30 | Gen Electric Co Ltd | Improvements in or relating to methods of forming a junction in a semiconductor |
| US2842831A (en) * | 1956-08-30 | 1958-07-15 | Bell Telephone Labor Inc | Manufacture of semiconductor devices |
| NL236288A (en, 2012) * | 1958-02-22 |
-
0
- NL NL258203D patent/NL258203A/xx unknown
-
1961
- 1961-11-14 US US152322A patent/US3152373A/en not_active Expired - Lifetime
- 1961-11-17 CH CH1339761A patent/CH413112A/de unknown
- 1961-11-17 DE DEN20832A patent/DE1176759B/de active Pending
- 1961-11-17 GB GB41243/61A patent/GB966594A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1015937B (de) * | 1952-09-16 | 1957-09-19 | Rca Corp | Verfahren zur Herstellung von Halbleitern mit p-n-Schichten |
| AT212880B (de) * | 1958-02-22 | 1961-01-10 | Philips Nv | Verfahren und Legierform zum Aufschmelzen eines Kontaktes auf einen halbleitenden Körper |
Also Published As
| Publication number | Publication date |
|---|---|
| GB966594A (en) | 1964-08-12 |
| NL258203A (en, 2012) | |
| US3152373A (en) | 1964-10-13 |
| CH413112A (de) | 1966-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1127488B (de) | Halbleiteranordnung aus Silizium oder Germanium und Verfahren zu ihrer Herstellung | |
| DE2818261A1 (de) | Halbleiter-solarzelle und verfahren zu ihrer herstellung | |
| DE976348C (de) | Verfahren zur Herstellung von Halbleiterbauelementen mit pn-UEbergaengen und nach diesem Verfahren hergestellte Bauelemente | |
| DE2130122A1 (de) | Schottkygrenzschicht-Feldeffekttransistor | |
| DE1033786B (de) | Verfahren zur Herstellung eines Silizium-Gleichrichters | |
| DE1564524B2 (en, 2012) | ||
| DE1764180B2 (de) | Verfahren zum einstellen der ladungstraeger lebensdauer in einer oertlich begrenzten zone eines halbleiterkoerpers | |
| DE1176759B (de) | Verfahren zum Herstellen von Halbleiteranordnungen | |
| DE2517252A1 (de) | Halbleiterelement | |
| DE2310453C3 (de) | Verfahren zum Herstellen eines gegen Überspannungen geschützten Halbleiterbauelementes | |
| DE1029936B (de) | Legierungs-Verfahren zum Herstellen von p-n-Schichten | |
| DE1170082B (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| AT233631B (de) | Verfahren zum Herstellen von Halbleitervorrichtungen | |
| DE1131808B (de) | Verfahren zum Herstellen von n-leitenden Halbleiterkoerpern von Transistoren od. dgl. aus Elementen der IV. Gruppe des Periodischen Systems, insbesondere Germanium oder Silizium | |
| DE1262388B (de) | Verfahren zur Erzeugung eines nicht-gleichrichtenden UEbergangs zwischen einer Elektrode und einem dotierten thermoelelktrischen Halbleiter fuer ein thermoelektrisches Geraet | |
| DE1130525B (de) | Flaechentransistor mit einem scheibenfoermigen Halbleiterkoerper eines bestimmten Leitungstyps | |
| DE2009359A1 (de) | Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial | |
| DE1160953B (de) | Legierungsverfahren zur Herstellung von Tunneldioden | |
| DE1282204B (de) | Solarzelle und Verfahren zu ihrer Herstellung | |
| AT219097B (de) | Tunnel-Diode und Verfahren zu ihrer Herstellung | |
| AT250699B (de) | Thermoelektrische Einrichtung | |
| DE1266510B (de) | Halbleitervorrichtung mit einem Halbleiterkoerper mit mindestens einem Kontakt und Verfahren zum Herstellen | |
| DE1218621B (de) | Siliziumgleichrichterelement mit einem kreisscheibenfoermigen Siliziumplaettchen | |
| DE1168567B (de) | Verfahren zum Herstellen eines Transistors, insbesondere fuer Schaltzwecke | |
| DE1223814B (de) | Verfahren zum Herstellen von Stoerhalbleitersystemen |