DE1144850B - Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform - Google Patents

Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform

Info

Publication number
DE1144850B
DE1144850B DES59838A DES0059838A DE1144850B DE 1144850 B DE1144850 B DE 1144850B DE S59838 A DES59838 A DE S59838A DE S0059838 A DES0059838 A DE S0059838A DE 1144850 B DE1144850 B DE 1144850B
Authority
DE
Germany
Prior art keywords
metal
doping
semiconductor body
semiconductor
pill
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES59838A
Other languages
German (de)
English (en)
Inventor
Dr Karl Siebertz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL242858D priority Critical patent/NL242858A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES59838A priority patent/DE1144850B/de
Priority to FR802426A priority patent/FR1232135A/fr
Priority to CH7796059A priority patent/CH374120A/de
Priority to GB3107259A priority patent/GB881936A/en
Publication of DE1144850B publication Critical patent/DE1144850B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DES59838A 1958-09-15 1958-09-15 Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform Pending DE1144850B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL242858D NL242858A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1958-09-15
DES59838A DE1144850B (de) 1958-09-15 1958-09-15 Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform
FR802426A FR1232135A (fr) 1958-09-15 1959-08-08 Procédé pour doper une zone d'un corps semi-conducteur
CH7796059A CH374120A (de) 1958-09-15 1959-09-08 Verfahren zum Dotieren einer Zone eines Halbleiterkörpers
GB3107259A GB881936A (en) 1958-09-15 1959-09-11 A method of doping a semi-conductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59838A DE1144850B (de) 1958-09-15 1958-09-15 Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform

Publications (1)

Publication Number Publication Date
DE1144850B true DE1144850B (de) 1963-03-07

Family

ID=7493622

Family Applications (1)

Application Number Title Priority Date Filing Date
DES59838A Pending DE1144850B (de) 1958-09-15 1958-09-15 Verfahren zum Dotieren einer Zone eines Halbleiterkoerpers unter Verwendung einer Legierungsform

Country Status (5)

Country Link
CH (1) CH374120A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1144850B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1232135A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB881936A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL242858A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1088286A (fr) * 1952-08-14 1955-03-04 Sylvania Electric Prod Dispositifs semi-conducteurs à jonction de surface

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1088286A (fr) * 1952-08-14 1955-03-04 Sylvania Electric Prod Dispositifs semi-conducteurs à jonction de surface

Also Published As

Publication number Publication date
NL242858A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB881936A (en) 1961-11-08
CH374120A (de) 1963-12-31
FR1232135A (fr) 1960-10-05

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