DE112024003047T5 - Siliziumkarbid-Halbleiterbauelemente - Google Patents

Siliziumkarbid-Halbleiterbauelemente

Info

Publication number
DE112024003047T5
DE112024003047T5 DE112024003047.5T DE112024003047T DE112024003047T5 DE 112024003047 T5 DE112024003047 T5 DE 112024003047T5 DE 112024003047 T DE112024003047 T DE 112024003047T DE 112024003047 T5 DE112024003047 T5 DE 112024003047T5
Authority
DE
Germany
Prior art keywords
region
silicon carbide
main surface
area
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112024003047.5T
Other languages
German (de)
English (en)
Inventor
Yu Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112024003047T5 publication Critical patent/DE112024003047T5/de
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112024003047.5T 2023-07-21 2024-07-09 Siliziumkarbid-Halbleiterbauelemente Pending DE112024003047T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023119164 2023-07-21
JP2023-119164 2023-07-21
PCT/JP2024/024715 WO2025023001A1 (ja) 2023-07-21 2024-07-09 炭化珪素半導体装置

Publications (1)

Publication Number Publication Date
DE112024003047T5 true DE112024003047T5 (de) 2026-05-07

Family

ID=94374319

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112024003047.5T Pending DE112024003047T5 (de) 2023-07-21 2024-07-09 Siliziumkarbid-Halbleiterbauelemente

Country Status (4)

Country Link
JP (1) JPWO2025023001A1 (https=)
CN (1) CN121420644A (https=)
DE (1) DE112024003047T5 (https=)
WO (1) WO2025023001A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023119164A (ja) 2022-02-16 2023-08-28 プライムプラネットエナジー＆ソリューションズ株式会社 ニッケル鉱からのニッケルの浸出方法および硫酸ニッケルの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015162579A (ja) * 2014-02-27 2015-09-07 住友電気工業株式会社 半導体装置
JP6428489B2 (ja) * 2014-09-16 2018-11-28 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6400548B2 (ja) * 2015-09-14 2018-10-03 株式会社東芝 半導体装置
JPWO2018042835A1 (ja) * 2016-08-31 2019-06-24 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP7081087B2 (ja) * 2017-06-02 2022-06-07 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
WO2020110514A1 (ja) * 2018-11-29 2020-06-04 富士電機株式会社 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法
JP7807731B2 (ja) * 2022-03-22 2026-01-28 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023119164A (ja) 2022-02-16 2023-08-28 プライムプラネットエナジー＆ソリューションズ株式会社 ニッケル鉱からのニッケルの浸出方法および硫酸ニッケルの製造方法

Also Published As

Publication number Publication date
CN121420644A (zh) 2026-01-27
WO2025023001A1 (ja) 2025-01-30
JPWO2025023001A1 (https=) 2025-01-30

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