CN121420644A - 碳化硅半导体器件 - Google Patents
碳化硅半导体器件Info
- Publication number
- CN121420644A CN121420644A CN202480042705.1A CN202480042705A CN121420644A CN 121420644 A CN121420644 A CN 121420644A CN 202480042705 A CN202480042705 A CN 202480042705A CN 121420644 A CN121420644 A CN 121420644A
- Authority
- CN
- China
- Prior art keywords
- region
- silicon carbide
- electric field
- conductivity type
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023119164 | 2023-07-21 | ||
| JP2023-119164 | 2023-07-21 | ||
| PCT/JP2024/024715 WO2025023001A1 (ja) | 2023-07-21 | 2024-07-09 | 炭化珪素半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN121420644A true CN121420644A (zh) | 2026-01-27 |
Family
ID=94374319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202480042705.1A Pending CN121420644A (zh) | 2023-07-21 | 2024-07-09 | 碳化硅半导体器件 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2025023001A1 (https=) |
| CN (1) | CN121420644A (https=) |
| DE (1) | DE112024003047T5 (https=) |
| WO (1) | WO2025023001A1 (https=) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015162579A (ja) * | 2014-02-27 | 2015-09-07 | 住友電気工業株式会社 | 半導体装置 |
| JP6428489B2 (ja) * | 2014-09-16 | 2018-11-28 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP6400548B2 (ja) * | 2015-09-14 | 2018-10-03 | 株式会社東芝 | 半導体装置 |
| JPWO2018042835A1 (ja) * | 2016-08-31 | 2019-06-24 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP7081087B2 (ja) * | 2017-06-02 | 2022-06-07 | 富士電機株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| WO2020110514A1 (ja) * | 2018-11-29 | 2020-06-04 | 富士電機株式会社 | 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法 |
| JP7541315B2 (ja) | 2022-02-16 | 2024-08-28 | プライムプラネットエナジー＆ソリューションズ株式会社 | ニッケル鉱からのニッケルの浸出方法および硫酸ニッケルの製造方法 |
| JP7807731B2 (ja) * | 2022-03-22 | 2026-01-28 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
-
2024
- 2024-07-09 DE DE112024003047.5T patent/DE112024003047T5/de active Pending
- 2024-07-09 CN CN202480042705.1A patent/CN121420644A/zh active Pending
- 2024-07-09 JP JP2025535701A patent/JPWO2025023001A1/ja active Pending
- 2024-07-09 WO PCT/JP2024/024715 patent/WO2025023001A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE112024003047T5 (de) | 2026-05-07 |
| WO2025023001A1 (ja) | 2025-01-30 |
| JPWO2025023001A1 (https=) | 2025-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |