DE112022004055T5 - Halbleiterbauteil - Google Patents

Halbleiterbauteil Download PDF

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Publication number
DE112022004055T5
DE112022004055T5 DE112022004055.6T DE112022004055T DE112022004055T5 DE 112022004055 T5 DE112022004055 T5 DE 112022004055T5 DE 112022004055 T DE112022004055 T DE 112022004055T DE 112022004055 T5 DE112022004055 T5 DE 112022004055T5
Authority
DE
Germany
Prior art keywords
transistor
control signal
state
switching element
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022004055.6T
Other languages
German (de)
English (en)
Inventor
Naoki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE112022004055T5 publication Critical patent/DE112022004055T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
DE112022004055.6T 2021-11-08 2022-08-30 Halbleiterbauteil Pending DE112022004055T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021181609 2021-11-08
JP2021-181609 2021-11-08
PCT/JP2022/032511 WO2023079820A1 (ja) 2021-11-08 2022-08-30 半導体装置

Publications (1)

Publication Number Publication Date
DE112022004055T5 true DE112022004055T5 (de) 2024-08-01

Family

ID=86241208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022004055.6T Pending DE112022004055T5 (de) 2021-11-08 2022-08-30 Halbleiterbauteil

Country Status (5)

Country Link
US (1) US12580563B2 (https=)
JP (1) JPWO2023079820A1 (https=)
CN (1) CN118202564A (https=)
DE (1) DE112022004055T5 (https=)
WO (1) WO2023079820A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102024129617A1 (de) * 2024-10-14 2026-04-16 Audi Aktiengesellschaft Elektronische Schaltungsvorrichtung zur Bildung eines Umrichters oder Gleichspannungswandlers

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250141275A1 (en) * 2023-10-31 2025-05-01 Renesas Electronics America Inc. Adaptive zero voltage switching for near field communication
US12362742B1 (en) 2024-03-13 2025-07-15 GM Global Technology Operations LLC Variable slew rate gate driver for hybrid switch power module
US20250323583A1 (en) * 2024-04-12 2025-10-16 GM Global Technology Operations LLC System and method for controlling a multi-phase inverter of an electric machine

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014117109A (ja) 2012-12-12 2014-06-26 Rohm Co Ltd スイッチング電源装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9030054B2 (en) * 2012-03-27 2015-05-12 Raytheon Company Adaptive gate drive control method and circuit for composite power switch
KR101643492B1 (ko) * 2012-04-06 2016-07-27 미쓰비시덴키 가부시키가이샤 복합 반도체 스위치 장치
WO2016103328A1 (ja) * 2014-12-22 2016-06-30 三菱電機株式会社 スイッチング装置、モータ駆動装置、電力変換装置およびスイッチング方法
WO2018087374A1 (en) * 2016-11-14 2018-05-17 Abb Schweiz Ag Switching of paralleled reverse conducting igbt and wide bandgap switch
JP6760156B2 (ja) * 2017-03-20 2020-09-23 株式会社デンソー 電力変換装置
JP7099312B2 (ja) * 2018-12-26 2022-07-12 株式会社デンソー スイッチの駆動装置
CN111130514B (zh) * 2019-12-30 2022-04-29 华为数字能源技术有限公司 开关装置的控制方法及控制装置
DE112022001871T5 (de) * 2021-05-10 2024-02-01 Rohm Co., Ltd. Halbleiterbauelement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014117109A (ja) 2012-12-12 2014-06-26 Rohm Co Ltd スイッチング電源装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102024129617A1 (de) * 2024-10-14 2026-04-16 Audi Aktiengesellschaft Elektronische Schaltungsvorrichtung zur Bildung eines Umrichters oder Gleichspannungswandlers

Also Published As

Publication number Publication date
WO2023079820A1 (ja) 2023-05-11
CN118202564A (zh) 2024-06-14
JPWO2023079820A1 (https=) 2023-05-11
US20240259015A1 (en) 2024-08-01
US12580563B2 (en) 2026-03-17

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