DE112021003951T5 - Abbildungsvorrichtung und elektronische Vorrichtung - Google Patents

Abbildungsvorrichtung und elektronische Vorrichtung Download PDF

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Publication number
DE112021003951T5
DE112021003951T5 DE112021003951.2T DE112021003951T DE112021003951T5 DE 112021003951 T5 DE112021003951 T5 DE 112021003951T5 DE 112021003951 T DE112021003951 T DE 112021003951T DE 112021003951 T5 DE112021003951 T5 DE 112021003951T5
Authority
DE
Germany
Prior art keywords
layer
circuits
circuit
transistor
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021003951.2T
Other languages
German (de)
English (en)
Inventor
Shunsuke Sato
Seiichi Yoneda
Yusuke Negoro
Takeya HIROSE
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE112021003951T5 publication Critical patent/DE112021003951T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • Computing Systems (AREA)
  • Pure & Applied Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
DE112021003951.2T 2020-07-24 2021-07-12 Abbildungsvorrichtung und elektronische Vorrichtung Pending DE112021003951T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-125984 2020-07-24
JP2020125984 2020-07-24
PCT/IB2021/056222 WO2022018561A1 (ja) 2020-07-24 2021-07-12 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
DE112021003951T5 true DE112021003951T5 (de) 2023-06-07

Family

ID=79728640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021003951.2T Pending DE112021003951T5 (de) 2020-07-24 2021-07-12 Abbildungsvorrichtung und elektronische Vorrichtung

Country Status (7)

Country Link
US (2) US12120446B2 (https=)
JP (2) JP7686648B2 (https=)
KR (1) KR20230047331A (https=)
CN (1) CN116018818A (https=)
DE (1) DE112021003951T5 (https=)
TW (2) TW202549590A (https=)
WO (1) WO2022018561A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022018561A1 (ja) * 2020-07-24 2022-01-27 株式会社半導体エネルギー研究所 撮像装置および電子機器
US12413876B2 (en) * 2022-12-21 2025-09-09 Meta Platforms Technologies, Llc Multi-mode sensor assembly for light detection

Family Cites Families (26)

* Cited by examiner, † Cited by third party
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DE69111800T2 (de) 1991-06-20 1995-12-14 Hewlett Packard Gmbh Photodiodenanordnung.
US6919551B2 (en) 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
JP4743007B2 (ja) 2006-06-16 2011-08-10 ソニー株式会社 画像処理装置および画像処理方法、記録媒体、並びに、プログラム
JP2009193429A (ja) * 2008-02-15 2009-08-27 Mitsubishi Electric Corp 画像読取装置
JP5642344B2 (ja) 2008-11-21 2014-12-17 オリンパスイメージング株式会社 画像処理装置、画像処理方法、および、画像処理プログラム
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
JP5526840B2 (ja) 2010-02-09 2014-06-18 ソニー株式会社 画像信号処理装置、撮像装置、画像信号処理方法、およびプログラム
JP5903772B2 (ja) 2011-04-11 2016-04-13 ソニー株式会社 固体撮像素子およびカメラシステム
KR101303868B1 (ko) 2011-10-13 2013-09-04 한국과학기술연구원 컬러 이미지 센서
JP2013258675A (ja) 2012-05-16 2013-12-26 Canon Inc 画像処理装置、画像処理方法およびプログラム、並びに撮像装置
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9940533B2 (en) 2014-09-30 2018-04-10 Qualcomm Incorporated Scanning window for isolating pixel values in hardware for computer vision operations
US9773832B2 (en) 2014-12-10 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6440844B2 (ja) 2015-07-14 2018-12-19 オリンパス株式会社 固体撮像装置
US10020336B2 (en) * 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
CN108781265B (zh) 2016-03-30 2020-11-03 株式会社尼康 特征提取元件、特征提取系统及判定装置
WO2018211366A1 (ja) 2017-05-18 2018-11-22 株式会社半導体エネルギー研究所 画像検出モジュール、情報管理システム
CN110651468B (zh) * 2017-05-26 2022-03-22 株式会社半导体能源研究所 摄像装置及电子设备
JP6956784B2 (ja) 2017-06-08 2021-11-02 株式会社半導体エネルギー研究所 撮像装置
CN120455860A (zh) 2017-06-14 2025-08-08 株式会社半导体能源研究所 摄像装置及电子设备
WO2019069614A1 (ja) * 2017-10-03 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子機器
CN113711339A (zh) 2019-04-29 2021-11-26 株式会社半导体能源研究所 摄像装置、其工作方法及电子设备
WO2021033065A1 (ja) 2019-08-22 2021-02-25 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2021130590A1 (ja) 2019-12-27 2021-07-01 株式会社半導体エネルギー研究所 撮像装置、および電子機器
CN115428437A (zh) 2020-04-17 2022-12-02 株式会社半导体能源研究所 摄像装置及电子设备
WO2022018561A1 (ja) * 2020-07-24 2022-01-27 株式会社半導体エネルギー研究所 撮像装置および電子機器

Also Published As

Publication number Publication date
US20230179888A1 (en) 2023-06-08
JPWO2022018561A1 (https=) 2022-01-27
CN116018818A (zh) 2023-04-25
US20250088769A1 (en) 2025-03-13
TW202549590A (zh) 2025-12-16
KR20230047331A (ko) 2023-04-07
US12120446B2 (en) 2024-10-15
TW202209659A (zh) 2022-03-01
TWI897996B (zh) 2025-09-21
JP2025113384A (ja) 2025-08-01
JP7686648B2 (ja) 2025-06-02
WO2022018561A1 (ja) 2022-01-27

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R083 Amendment of/additions to inventor(s)
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0027146000

Ipc: H10F0039180000