JP7686648B2 - 撮像装置および電子機器 - Google Patents

撮像装置および電子機器 Download PDF

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Publication number
JP7686648B2
JP7686648B2 JP2022538486A JP2022538486A JP7686648B2 JP 7686648 B2 JP7686648 B2 JP 7686648B2 JP 2022538486 A JP2022538486 A JP 2022538486A JP 2022538486 A JP2022538486 A JP 2022538486A JP 7686648 B2 JP7686648 B2 JP 7686648B2
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layer
circuit
circuits
transistor
pixel
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Japanese (ja)
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JPWO2022018561A1 (https=
Inventor
駿介 佐藤
誠一 米田
雄介 根来
丈也 廣瀬
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2025084797A priority Critical patent/JP2025113384A/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
    • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
    • G06F7/544—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices for evaluating functions by calculation
    • G06F7/5443—Sum of products
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Optimization (AREA)
  • Mathematical Analysis (AREA)
  • Computing Systems (AREA)
  • Pure & Applied Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
JP2022538486A 2020-07-24 2021-07-12 撮像装置および電子機器 Active JP7686648B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025084797A JP2025113384A (ja) 2020-07-24 2025-05-21 撮像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020125984 2020-07-24
JP2020125984 2020-07-24
PCT/IB2021/056222 WO2022018561A1 (ja) 2020-07-24 2021-07-12 撮像装置および電子機器

Related Child Applications (1)

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JP2025084797A Division JP2025113384A (ja) 2020-07-24 2025-05-21 撮像装置

Publications (2)

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JPWO2022018561A1 JPWO2022018561A1 (https=) 2022-01-27
JP7686648B2 true JP7686648B2 (ja) 2025-06-02

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JP2025084797A Pending JP2025113384A (ja) 2020-07-24 2025-05-21 撮像装置

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Country Status (7)

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US (2) US12120446B2 (https=)
JP (2) JP7686648B2 (https=)
KR (1) KR20230047331A (https=)
CN (1) CN116018818A (https=)
DE (1) DE112021003951T5 (https=)
TW (2) TW202549590A (https=)
WO (1) WO2022018561A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025113384A (ja) * 2020-07-24 2025-08-01 株式会社半導体エネルギー研究所 撮像装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12413876B2 (en) * 2022-12-21 2025-09-09 Meta Platforms Technologies, Llc Multi-mode sensor assembly for light detection

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222649A (ja) 2011-04-11 2012-11-12 Sony Corp 固体撮像素子およびカメラシステム
JP2016123087A (ja) 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
WO2017168665A1 (ja) 2016-03-30 2017-10-05 株式会社ニコン 特徴抽出素子、特徴抽出システム、および判定装置

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US6919551B2 (en) 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
JP4743007B2 (ja) 2006-06-16 2011-08-10 ソニー株式会社 画像処理装置および画像処理方法、記録媒体、並びに、プログラム
JP2009193429A (ja) * 2008-02-15 2009-08-27 Mitsubishi Electric Corp 画像読取装置
JP5642344B2 (ja) 2008-11-21 2014-12-17 オリンパスイメージング株式会社 画像処理装置、画像処理方法、および、画像処理プログラム
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
JP5526840B2 (ja) 2010-02-09 2014-06-18 ソニー株式会社 画像信号処理装置、撮像装置、画像信号処理方法、およびプログラム
KR101303868B1 (ko) 2011-10-13 2013-09-04 한국과학기술연구원 컬러 이미지 센서
JP2013258675A (ja) 2012-05-16 2013-12-26 Canon Inc 画像処理装置、画像処理方法およびプログラム、並びに撮像装置
WO2016046685A1 (en) 2014-09-26 2016-03-31 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9940533B2 (en) 2014-09-30 2018-04-10 Qualcomm Incorporated Scanning window for isolating pixel values in hardware for computer vision operations
JP6440844B2 (ja) 2015-07-14 2018-12-19 オリンパス株式会社 固体撮像装置
US10020336B2 (en) * 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
WO2018211366A1 (ja) 2017-05-18 2018-11-22 株式会社半導体エネルギー研究所 画像検出モジュール、情報管理システム
CN110651468B (zh) * 2017-05-26 2022-03-22 株式会社半导体能源研究所 摄像装置及电子设备
JP6956784B2 (ja) 2017-06-08 2021-11-02 株式会社半導体エネルギー研究所 撮像装置
CN120455860A (zh) 2017-06-14 2025-08-08 株式会社半导体能源研究所 摄像装置及电子设备
WO2019069614A1 (ja) * 2017-10-03 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子機器
CN113711339A (zh) 2019-04-29 2021-11-26 株式会社半导体能源研究所 摄像装置、其工作方法及电子设备
WO2021033065A1 (ja) 2019-08-22 2021-02-25 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2021130590A1 (ja) 2019-12-27 2021-07-01 株式会社半導体エネルギー研究所 撮像装置、および電子機器
CN115428437A (zh) 2020-04-17 2022-12-02 株式会社半导体能源研究所 摄像装置及电子设备
WO2022018561A1 (ja) * 2020-07-24 2022-01-27 株式会社半導体エネルギー研究所 撮像装置および電子機器

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2012222649A (ja) 2011-04-11 2012-11-12 Sony Corp 固体撮像素子およびカメラシステム
JP2016123087A (ja) 2014-12-10 2016-07-07 株式会社半導体エネルギー研究所 半導体装置および電子機器
WO2017168665A1 (ja) 2016-03-30 2017-10-05 株式会社ニコン 特徴抽出素子、特徴抽出システム、および判定装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025113384A (ja) * 2020-07-24 2025-08-01 株式会社半導体エネルギー研究所 撮像装置

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US20230179888A1 (en) 2023-06-08
JPWO2022018561A1 (https=) 2022-01-27
CN116018818A (zh) 2023-04-25
US20250088769A1 (en) 2025-03-13
TW202549590A (zh) 2025-12-16
KR20230047331A (ko) 2023-04-07
US12120446B2 (en) 2024-10-15
TW202209659A (zh) 2022-03-01
TWI897996B (zh) 2025-09-21
JP2025113384A (ja) 2025-08-01
DE112021003951T5 (de) 2023-06-07
WO2022018561A1 (ja) 2022-01-27

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