DE112021000475T5 - Halbleiter-laserelement - Google Patents

Halbleiter-laserelement Download PDF

Info

Publication number
DE112021000475T5
DE112021000475T5 DE112021000475.1T DE112021000475T DE112021000475T5 DE 112021000475 T5 DE112021000475 T5 DE 112021000475T5 DE 112021000475 T DE112021000475 T DE 112021000475T DE 112021000475 T5 DE112021000475 T5 DE 112021000475T5
Authority
DE
Germany
Prior art keywords
film
layer
semiconductor laser
laser element
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112021000475.1T
Other languages
German (de)
English (en)
Inventor
Atsunori Mochida
Shinichiro NOZAKI
Masanori Era
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Panasonic Holdings Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Holdings Corp filed Critical Panasonic Holdings Corp
Publication of DE112021000475T5 publication Critical patent/DE112021000475T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE112021000475.1T 2020-03-17 2021-03-02 Halbleiter-laserelement Pending DE112021000475T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020046662 2020-03-17
JP2020-046662 2020-03-17
PCT/JP2021/007842 WO2021187081A1 (ja) 2020-03-17 2021-03-02 半導体レーザ素子

Publications (1)

Publication Number Publication Date
DE112021000475T5 true DE112021000475T5 (de) 2022-12-01

Family

ID=77768133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021000475.1T Pending DE112021000475T5 (de) 2020-03-17 2021-03-02 Halbleiter-laserelement

Country Status (5)

Country Link
US (1) US20230072452A1 (https=)
JP (1) JP7696887B2 (https=)
CN (1) CN115280612A (https=)
DE (1) DE112021000475T5 (https=)
WO (1) WO2021187081A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
KR20230033185A (ko) * 2021-08-30 2023-03-08 삼성디스플레이 주식회사 표시 장치, 발광 소자의 제조 방법, 및 이에 따라 제조된 발광 소자를 포함하는 표시 장치의 제조 방법
WO2023149081A1 (ja) * 2022-02-01 2023-08-10 パナソニックホールディングス株式会社 半導体レーザ素子
JP2023160590A (ja) * 2022-04-22 2023-11-02 華信光電科技股▲分▼有限公司 端面発光半導体レーザ
JPWO2024004677A1 (https=) * 2022-06-28 2024-01-04

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142768A (ja) * 2001-08-23 2003-05-16 Furukawa Electric Co Ltd:The 光伝送装置、それに用いられる半導体レーザ装置及びその製造方法
JP2004088049A (ja) * 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
JP2004363534A (ja) * 2002-09-05 2004-12-24 Mitsubishi Electric Corp 半導体光素子装置およびそれが用いられた半導体レーザモジュール
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
US7852893B2 (en) * 2007-02-26 2010-12-14 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2008294202A (ja) * 2007-05-24 2008-12-04 Nec Electronics Corp ファブリペロー型共振器レーザとその設計方法
JP2009231367A (ja) * 2008-03-19 2009-10-08 Sharp Corp 窒化物半導体レーザ素子および外部共振器型半導体レーザ装置
WO2010005027A1 (ja) * 2008-07-10 2010-01-14 浜岡東芝エレクトロニクス株式会社 半導体レーザ装置
JP5193718B2 (ja) * 2008-07-18 2013-05-08 パナソニック株式会社 窒化物半導体レーザ装置
CN101741013A (zh) * 2008-11-21 2010-06-16 三洋电机株式会社 氮化物类半导体激光元件和光拾取装置
JP2010219436A (ja) * 2009-03-18 2010-09-30 Sony Corp 多波長半導体レーザおよび光学記録再生装置
JP2012064637A (ja) * 2010-09-14 2012-03-29 Sanyo Electric Co Ltd 半導体レーザ素子、半導体レーザ装置およびこれを用いた光装置
JP2012084753A (ja) * 2010-10-14 2012-04-26 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び光装置
KR20140127034A (ko) * 2013-04-24 2014-11-03 주식회사 옵토웰 에지 에미팅 레이저 다이오드 및 그의 제조방법
JP5959484B2 (ja) * 2013-08-23 2016-08-02 ウシオオプトセミコンダクター株式会社 半導体レーザ素子、及び半導体レーザ装置
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
JP2019129216A (ja) * 2018-01-24 2019-08-01 パナソニック株式会社 窒化物半導体レーザ素子及び半導体レーザ装置
JP7296934B2 (ja) * 2018-02-14 2023-06-23 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体レーザ素子及び照明光源モジュール
WO2020026730A1 (ja) * 2018-07-30 2020-02-06 パナソニック株式会社 半導体発光装置及び外部共振型レーザ装置

Also Published As

Publication number Publication date
WO2021187081A1 (ja) 2021-09-23
JP7696887B2 (ja) 2025-06-23
CN115280612A (zh) 2022-11-01
JPWO2021187081A1 (https=) 2021-09-23
US20230072452A1 (en) 2023-03-09

Similar Documents

Publication Publication Date Title
DE112021000475T5 (de) Halbleiter-laserelement
DE69900953T2 (de) Halbleiterlaser aus einer Nitridverbindung
DE102008030818B4 (de) Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
DE112018003684T5 (de) Lichtemittierendes element und array aus lichtemittierenden elementen
DE10330843A1 (de) Nitridhalbleiter-Leuchtdiode
DE102008030844A1 (de) Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen
DE102011054954A1 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
DE102017108949A1 (de) Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE112020002289T5 (de) Halbleiterlaservorrichtung und externe Resonanzlaservorrichtung
WO2021214174A1 (de) Halbleiterlaser und lidar-system sowie laser-system mit dem halbleiterlaser
EP1906461B1 (de) Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
WO2022122920A1 (de) Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips
WO2024068344A1 (de) Photonische integrierte schaltung mit verstärkungsmedium und optoelektronische vorrichtung
DE102021117534A1 (de) Oberflächenemittierender halbleiterlaser und verfahren zur herstellung eines oberflächenemittierenden halbleiterlasers
DE102020118405A1 (de) Strahlungsemittierender halbleiterchip und verfahren zu dessen herstellung
DE112021002511B4 (de) Halbleiterlaser und lidar-system mit dem halbleiterlaser
WO2010048918A1 (de) Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
DE102024125049A1 (de) Halbleiterlaser und verfahren zur herstellung eines halbleiterlasers
DE102017122325A1 (de) Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen
EP2425507A1 (de) Kantenemittierender halbleiterlaser
DE102021102277B4 (de) Oberflächenemittierender halbleiterlaser und verfahren zur herstellung eines oberflächenemittierenden halbleiterlasers
DE112021002957B4 (de) Halbleiterlaser mit horizontalem und vertikalem laserelement, lidar-system und verfahren zur herstellung
DE102018111131B4 (de) Halbleiterlaserelement und Herstellungsverfahren dafür
DE112021000569T5 (de) Optoelektronische halbleitervorrichtung und verfahren zur herstellung einer optoelektronischen halbleitervorrichtung
DE112018005324T5 (de) Halbleiter-laserelement