JP7696887B2 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
JP7696887B2
JP7696887B2 JP2022508185A JP2022508185A JP7696887B2 JP 7696887 B2 JP7696887 B2 JP 7696887B2 JP 2022508185 A JP2022508185 A JP 2022508185A JP 2022508185 A JP2022508185 A JP 2022508185A JP 7696887 B2 JP7696887 B2 JP 7696887B2
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Japan
Prior art keywords
film
layer
semiconductor laser
face
semiconductor
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JP2022508185A
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Japanese (ja)
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JPWO2021187081A5 (https=
JPWO2021187081A1 (https=
Inventor
篤範 持田
信一郎 能崎
正範 江良
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2022508185A 2020-03-17 2021-03-02 半導体レーザ素子 Active JP7696887B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020046662 2020-03-17
JP2020046662 2020-03-17
PCT/JP2021/007842 WO2021187081A1 (ja) 2020-03-17 2021-03-02 半導体レーザ素子

Publications (3)

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JPWO2021187081A1 JPWO2021187081A1 (https=) 2021-09-23
JPWO2021187081A5 JPWO2021187081A5 (https=) 2022-11-18
JP7696887B2 true JP7696887B2 (ja) 2025-06-23

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JP2022508185A Active JP7696887B2 (ja) 2020-03-17 2021-03-02 半導体レーザ素子

Country Status (5)

Country Link
US (1) US20230072452A1 (https=)
JP (1) JP7696887B2 (https=)
CN (1) CN115280612A (https=)
DE (1) DE112021000475T5 (https=)
WO (1) WO2021187081A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
KR20230033185A (ko) * 2021-08-30 2023-03-08 삼성디스플레이 주식회사 표시 장치, 발광 소자의 제조 방법, 및 이에 따라 제조된 발광 소자를 포함하는 표시 장치의 제조 방법
WO2023149081A1 (ja) * 2022-02-01 2023-08-10 パナソニックホールディングス株式会社 半導体レーザ素子
JP2023160590A (ja) * 2022-04-22 2023-11-02 華信光電科技股▲分▼有限公司 端面発光半導体レーザ
JPWO2024004677A1 (https=) * 2022-06-28 2024-01-04

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142768A (ja) 2001-08-23 2003-05-16 Furukawa Electric Co Ltd:The 光伝送装置、それに用いられる半導体レーザ装置及びその製造方法
JP2004088049A (ja) 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
JP2004363534A (ja) 2002-09-05 2004-12-24 Mitsubishi Electric Corp 半導体光素子装置およびそれが用いられた半導体レーザモジュール
JP2008294202A (ja) 2007-05-24 2008-12-04 Nec Electronics Corp ファブリペロー型共振器レーザとその設計方法
JP2012064637A (ja) 2010-09-14 2012-03-29 Sanyo Electric Co Ltd 半導体レーザ素子、半導体レーザ装置およびこれを用いた光装置
JP2012084753A (ja) 2010-10-14 2012-04-26 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び光装置
DE102017112610A1 (de) 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
JP2019129216A (ja) 2018-01-24 2019-08-01 パナソニック株式会社 窒化物半導体レーザ素子及び半導体レーザ装置
WO2019159449A1 (ja) 2018-02-14 2019-08-22 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール
WO2020026730A1 (ja) 2018-07-30 2020-02-06 パナソニック株式会社 半導体発光装置及び外部共振型レーザ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
US7852893B2 (en) * 2007-02-26 2010-12-14 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2009231367A (ja) * 2008-03-19 2009-10-08 Sharp Corp 窒化物半導体レーザ素子および外部共振器型半導体レーザ装置
WO2010005027A1 (ja) * 2008-07-10 2010-01-14 浜岡東芝エレクトロニクス株式会社 半導体レーザ装置
JP5193718B2 (ja) * 2008-07-18 2013-05-08 パナソニック株式会社 窒化物半導体レーザ装置
CN101741013A (zh) * 2008-11-21 2010-06-16 三洋电机株式会社 氮化物类半导体激光元件和光拾取装置
JP2010219436A (ja) * 2009-03-18 2010-09-30 Sony Corp 多波長半導体レーザおよび光学記録再生装置
KR20140127034A (ko) * 2013-04-24 2014-11-03 주식회사 옵토웰 에지 에미팅 레이저 다이오드 및 그의 제조방법
JP5959484B2 (ja) * 2013-08-23 2016-08-02 ウシオオプトセミコンダクター株式会社 半導体レーザ素子、及び半導体レーザ装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142768A (ja) 2001-08-23 2003-05-16 Furukawa Electric Co Ltd:The 光伝送装置、それに用いられる半導体レーザ装置及びその製造方法
JP2004088049A (ja) 2002-03-08 2004-03-18 Mitsubishi Electric Corp 光半導体装置
JP2004363534A (ja) 2002-09-05 2004-12-24 Mitsubishi Electric Corp 半導体光素子装置およびそれが用いられた半導体レーザモジュール
JP2008294202A (ja) 2007-05-24 2008-12-04 Nec Electronics Corp ファブリペロー型共振器レーザとその設計方法
JP2012064637A (ja) 2010-09-14 2012-03-29 Sanyo Electric Co Ltd 半導体レーザ素子、半導体レーザ装置およびこれを用いた光装置
JP2012084753A (ja) 2010-10-14 2012-04-26 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子及び光装置
DE102017112610A1 (de) 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
JP2019129216A (ja) 2018-01-24 2019-08-01 パナソニック株式会社 窒化物半導体レーザ素子及び半導体レーザ装置
WO2019159449A1 (ja) 2018-02-14 2019-08-22 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール
WO2020026730A1 (ja) 2018-07-30 2020-02-06 パナソニック株式会社 半導体発光装置及び外部共振型レーザ装置

Also Published As

Publication number Publication date
WO2021187081A1 (ja) 2021-09-23
CN115280612A (zh) 2022-11-01
DE112021000475T5 (de) 2022-12-01
JPWO2021187081A1 (https=) 2021-09-23
US20230072452A1 (en) 2023-03-09

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