CN115280612A - 半导体激光元件 - Google Patents

半导体激光元件 Download PDF

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Publication number
CN115280612A
CN115280612A CN202180020766.4A CN202180020766A CN115280612A CN 115280612 A CN115280612 A CN 115280612A CN 202180020766 A CN202180020766 A CN 202180020766A CN 115280612 A CN115280612 A CN 115280612A
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CN
China
Prior art keywords
film
layer
semiconductor laser
semiconductor
laser element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180020766.4A
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English (en)
Chinese (zh)
Inventor
持田笃范
能崎信一郎
江良正范
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
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Panasonic Holdings Corp
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Filing date
Publication date
Application filed by Panasonic Holdings Corp filed Critical Panasonic Holdings Corp
Publication of CN115280612A publication Critical patent/CN115280612A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN202180020766.4A 2020-03-17 2021-03-02 半导体激光元件 Pending CN115280612A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020046662 2020-03-17
JP2020-046662 2020-03-17
PCT/JP2021/007842 WO2021187081A1 (ja) 2020-03-17 2021-03-02 半導体レーザ素子

Publications (1)

Publication Number Publication Date
CN115280612A true CN115280612A (zh) 2022-11-01

Family

ID=77768133

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180020766.4A Pending CN115280612A (zh) 2020-03-17 2021-03-02 半导体激光元件

Country Status (5)

Country Link
US (1) US20230072452A1 (https=)
JP (1) JP7696887B2 (https=)
CN (1) CN115280612A (https=)
DE (1) DE112021000475T5 (https=)
WO (1) WO2021187081A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113555768A (zh) * 2017-06-08 2021-10-26 欧司朗光电半导体有限公司 边缘发射的半导体激光器和这种半导体激光器的运行方法
US20230061476A1 (en) * 2021-08-30 2023-03-02 Samsung Display Co., Ltd. Display device, manufacturing method of light emitting element, and manufacturing method of display device including light emitting element manufactured thereby

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023149081A1 (ja) * 2022-02-01 2023-08-10 パナソニックホールディングス株式会社 半導体レーザ素子
JP2023160590A (ja) * 2022-04-22 2023-11-02 華信光電科技股▲分▼有限公司 端面発光半導体レーザ
JPWO2024004677A1 (https=) * 2022-06-28 2024-01-04

Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2003142768A (ja) * 2001-08-23 2003-05-16 Furukawa Electric Co Ltd:The 光伝送装置、それに用いられる半導体レーザ装置及びその製造方法
CN1444317A (zh) * 2002-03-08 2003-09-24 三菱电机株式会社 光半导体器件
CN1819378A (zh) * 2003-03-27 2006-08-16 三菱电机株式会社 半导体激光器装置
US20100014550A1 (en) * 2008-07-18 2010-01-21 Yoshiaki Hasegawa Nitride semiconductor laser device
CN101741013A (zh) * 2008-11-21 2010-06-16 三洋电机株式会社 氮化物类半导体激光元件和光拾取装置
CN102457017A (zh) * 2010-10-14 2012-05-16 三洋电机株式会社 氮化物类半导体激光元件和光学装置
US20150055670A1 (en) * 2013-08-23 2015-02-26 Oclaro Japan, Inc. Multi-beam semiconductor laser device

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JP2004363534A (ja) * 2002-09-05 2004-12-24 Mitsubishi Electric Corp 半導体光素子装置およびそれが用いられた半導体レーザモジュール
US7852893B2 (en) * 2007-02-26 2010-12-14 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2008294202A (ja) * 2007-05-24 2008-12-04 Nec Electronics Corp ファブリペロー型共振器レーザとその設計方法
JP2009231367A (ja) * 2008-03-19 2009-10-08 Sharp Corp 窒化物半導体レーザ素子および外部共振器型半導体レーザ装置
WO2010005027A1 (ja) * 2008-07-10 2010-01-14 浜岡東芝エレクトロニクス株式会社 半導体レーザ装置
JP2010219436A (ja) * 2009-03-18 2010-09-30 Sony Corp 多波長半導体レーザおよび光学記録再生装置
JP2012064637A (ja) * 2010-09-14 2012-03-29 Sanyo Electric Co Ltd 半導体レーザ素子、半導体レーザ装置およびこれを用いた光装置
KR20140127034A (ko) * 2013-04-24 2014-11-03 주식회사 옵토웰 에지 에미팅 레이저 다이오드 및 그의 제조방법
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
JP2019129216A (ja) * 2018-01-24 2019-08-01 パナソニック株式会社 窒化物半導体レーザ素子及び半導体レーザ装置
JP7296934B2 (ja) * 2018-02-14 2023-06-23 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体レーザ素子及び照明光源モジュール
WO2020026730A1 (ja) * 2018-07-30 2020-02-06 パナソニック株式会社 半導体発光装置及び外部共振型レーザ装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142768A (ja) * 2001-08-23 2003-05-16 Furukawa Electric Co Ltd:The 光伝送装置、それに用いられる半導体レーザ装置及びその製造方法
CN1444317A (zh) * 2002-03-08 2003-09-24 三菱电机株式会社 光半导体器件
CN1819378A (zh) * 2003-03-27 2006-08-16 三菱电机株式会社 半导体激光器装置
US20100014550A1 (en) * 2008-07-18 2010-01-21 Yoshiaki Hasegawa Nitride semiconductor laser device
CN101741013A (zh) * 2008-11-21 2010-06-16 三洋电机株式会社 氮化物类半导体激光元件和光拾取装置
CN102457017A (zh) * 2010-10-14 2012-05-16 三洋电机株式会社 氮化物类半导体激光元件和光学装置
US20150055670A1 (en) * 2013-08-23 2015-02-26 Oclaro Japan, Inc. Multi-beam semiconductor laser device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113555768A (zh) * 2017-06-08 2021-10-26 欧司朗光电半导体有限公司 边缘发射的半导体激光器和这种半导体激光器的运行方法
CN113555768B (zh) * 2017-06-08 2024-06-07 欧司朗光电半导体有限公司 边缘发射的半导体激光器和这种半导体激光器的运行方法
US20230061476A1 (en) * 2021-08-30 2023-03-02 Samsung Display Co., Ltd. Display device, manufacturing method of light emitting element, and manufacturing method of display device including light emitting element manufactured thereby
US12563872B2 (en) * 2021-08-30 2026-02-24 Samsung Display Co., Ltd. Display device, manufacturing method of light emitting element, and manufacturing method of display device including light emitting element manufactured thereby

Also Published As

Publication number Publication date
WO2021187081A1 (ja) 2021-09-23
JP7696887B2 (ja) 2025-06-23
DE112021000475T5 (de) 2022-12-01
JPWO2021187081A1 (https=) 2021-09-23
US20230072452A1 (en) 2023-03-09

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Application publication date: 20221101