DE112019007206B4 - Ladungsteilchenstrahlvorrichtung - Google Patents

Ladungsteilchenstrahlvorrichtung

Info

Publication number
DE112019007206B4
DE112019007206B4 DE112019007206.4T DE112019007206T DE112019007206B4 DE 112019007206 B4 DE112019007206 B4 DE 112019007206B4 DE 112019007206 T DE112019007206 T DE 112019007206T DE 112019007206 B4 DE112019007206 B4 DE 112019007206B4
Authority
DE
Germany
Prior art keywords
light
sample
intensity
per unit
control unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112019007206.4T
Other languages
German (de)
English (en)
Other versions
DE112019007206T5 (de
Inventor
Minami Shouji
Natsuki Tsuno
Hiroya Ohta
Daisuke Bizen
Hajime Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of DE112019007206T5 publication Critical patent/DE112019007206T5/de
Application granted granted Critical
Publication of DE112019007206B4 publication Critical patent/DE112019007206B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE112019007206.4T 2019-05-21 2019-05-21 Ladungsteilchenstrahlvorrichtung Active DE112019007206B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/020065 WO2020234987A1 (ja) 2019-05-21 2019-05-21 荷電粒子線装置

Publications (2)

Publication Number Publication Date
DE112019007206T5 DE112019007206T5 (de) 2022-01-05
DE112019007206B4 true DE112019007206B4 (de) 2026-01-22

Family

ID=73459313

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112019007206.4T Active DE112019007206B4 (de) 2019-05-21 2019-05-21 Ladungsteilchenstrahlvorrichtung

Country Status (6)

Country Link
US (2) US20220216032A1 (https=)
JP (1) JP7108788B2 (https=)
KR (1) KR102640025B1 (https=)
DE (1) DE112019007206B4 (https=)
TW (1) TWI748404B (https=)
WO (1) WO2020234987A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023145015A1 (ja) * 2022-01-28 2023-08-03 株式会社日立ハイテク 検査装置および膜質検査方法
WO2024069737A1 (ja) * 2022-09-27 2024-04-04 株式会社日立ハイテク 検査方法および荷電粒子線装置
KR20250090336A (ko) * 2022-12-20 2025-06-19 주식회사 히타치하이테크 시료의 특징량 도출 방법, 신호 처리 시스템을 조정하는 조정 방법 및 계측 시스템
JP2024173322A (ja) * 2023-06-02 2024-12-12 国立研究開発法人産業技術総合研究所 観察装置及び観察方法
WO2025069195A1 (ja) * 2023-09-26 2025-04-03 株式会社日立ハイテク 荷電粒子ビーム装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210066029A1 (en) * 2019-08-30 2021-03-04 Hitachi High-Tech Corporation Charged particle beam device
DE112018007852T5 (de) * 2018-09-11 2021-04-29 Hitachi High-Tech Corporation Elektronenstrahleinrichtung

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3805565B2 (ja) * 1999-06-11 2006-08-02 株式会社日立製作所 電子線画像に基づく検査または計測方法およびその装置
JP2003151483A (ja) * 2001-11-19 2003-05-23 Hitachi Ltd 荷電粒子線を用いた回路パターン用基板検査装置および基板検査方法
JP2007531876A (ja) * 2004-04-02 2007-11-08 カリフォルニア インスティテュート オブ テクノロジー 超高速光電子顕微鏡のための方法およびシステム
JP2006352026A (ja) * 2005-06-20 2006-12-28 Sony Corp 半導体レーザ装置及び半導体レーザ装置の製造方法
DE102007041496B3 (de) 2007-08-31 2009-02-26 Johnson Controls Gmbh Kopfstütze für ein Fahrzeug
JP5770434B2 (ja) * 2010-06-24 2015-08-26 株式会社堀場製作所 電子顕微鏡装置
JP5744629B2 (ja) * 2011-06-03 2015-07-08 株式会社日立ハイテクノロジーズ 電子顕微鏡及び電子線を用いた撮像方法
JP6289339B2 (ja) * 2014-10-28 2018-03-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び情報処理装置
WO2016143450A1 (ja) * 2015-03-10 2016-09-15 株式会社荏原製作所 検査装置
CN108603851B (zh) * 2016-03-16 2021-01-01 株式会社日立高新技术 缺陷检查装置
JP6957641B2 (ja) * 2017-11-27 2021-11-02 株式会社日立ハイテク 荷電粒子線装置およびそれを用いた試料観察方法
JP7105368B2 (ja) * 2019-03-27 2022-07-22 株式会社日立ハイテク 荷電粒子線装置
JP7189103B2 (ja) * 2019-08-30 2022-12-13 株式会社日立ハイテク 荷電粒子線装置
US12609274B2 (en) * 2020-09-28 2026-04-21 Hitachi High-Tech Corporation Charged particle beam device
US12196802B2 (en) * 2020-09-29 2025-01-14 Hitachi High-Tech Corporation Semiconductor inspection device and method for inspecting semiconductor sample

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112018007852T5 (de) * 2018-09-11 2021-04-29 Hitachi High-Tech Corporation Elektronenstrahleinrichtung
US20210066029A1 (en) * 2019-08-30 2021-03-04 Hitachi High-Tech Corporation Charged particle beam device

Also Published As

Publication number Publication date
JPWO2020234987A1 (https=) 2020-11-26
TW202044311A (zh) 2020-12-01
KR102640025B1 (ko) 2024-02-27
JP7108788B2 (ja) 2022-07-28
TWI748404B (zh) 2021-12-01
DE112019007206T5 (de) 2022-01-05
US20240363306A1 (en) 2024-10-31
WO2020234987A1 (ja) 2020-11-26
US20220216032A1 (en) 2022-07-07
KR20210142703A (ko) 2021-11-25

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