KR102640025B1 - 하전 입자선 장치 - Google Patents

하전 입자선 장치 Download PDF

Info

Publication number
KR102640025B1
KR102640025B1 KR1020217034096A KR20217034096A KR102640025B1 KR 102640025 B1 KR102640025 B1 KR 102640025B1 KR 1020217034096 A KR1020217034096 A KR 1020217034096A KR 20217034096 A KR20217034096 A KR 20217034096A KR 102640025 B1 KR102640025 B1 KR 102640025B1
Authority
KR
South Korea
Prior art keywords
light
sample
intensity
charged particle
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217034096A
Other languages
English (en)
Korean (ko)
Other versions
KR20210142703A (ko
Inventor
미나미 소우지
나츠키 츠노
히로야 오타
다이스케 비젠
하지메 가와노
Original Assignee
주식회사 히타치하이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 히타치하이테크 filed Critical 주식회사 히타치하이테크
Publication of KR20210142703A publication Critical patent/KR20210142703A/ko
Application granted granted Critical
Publication of KR102640025B1 publication Critical patent/KR102640025B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020217034096A 2019-05-21 2019-05-21 하전 입자선 장치 Active KR102640025B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/020065 WO2020234987A1 (ja) 2019-05-21 2019-05-21 荷電粒子線装置

Publications (2)

Publication Number Publication Date
KR20210142703A KR20210142703A (ko) 2021-11-25
KR102640025B1 true KR102640025B1 (ko) 2024-02-27

Family

ID=73459313

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217034096A Active KR102640025B1 (ko) 2019-05-21 2019-05-21 하전 입자선 장치

Country Status (6)

Country Link
US (2) US20220216032A1 (https=)
JP (1) JP7108788B2 (https=)
KR (1) KR102640025B1 (https=)
DE (1) DE112019007206B4 (https=)
TW (1) TWI748404B (https=)
WO (1) WO2020234987A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023145015A1 (ja) * 2022-01-28 2023-08-03 株式会社日立ハイテク 検査装置および膜質検査方法
WO2024069737A1 (ja) * 2022-09-27 2024-04-04 株式会社日立ハイテク 検査方法および荷電粒子線装置
KR20250090336A (ko) * 2022-12-20 2025-06-19 주식회사 히타치하이테크 시료의 특징량 도출 방법, 신호 처리 시스템을 조정하는 조정 방법 및 계측 시스템
JP2024173322A (ja) * 2023-06-02 2024-12-12 国立研究開発法人産業技術総合研究所 観察装置及び観察方法
WO2025069195A1 (ja) * 2023-09-26 2025-04-03 株式会社日立ハイテク 荷電粒子ビーム装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151483A (ja) * 2001-11-19 2003-05-23 Hitachi Ltd 荷電粒子線を用いた回路パターン用基板検査装置および基板検査方法
JP2006352026A (ja) 2005-06-20 2006-12-28 Sony Corp 半導体レーザ装置及び半導体レーザ装置の製造方法
JP2012009247A (ja) * 2010-06-24 2012-01-12 Topcon Corp 電子顕微鏡装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3805565B2 (ja) * 1999-06-11 2006-08-02 株式会社日立製作所 電子線画像に基づく検査または計測方法およびその装置
JP2007531876A (ja) * 2004-04-02 2007-11-08 カリフォルニア インスティテュート オブ テクノロジー 超高速光電子顕微鏡のための方法およびシステム
DE102007041496B3 (de) 2007-08-31 2009-02-26 Johnson Controls Gmbh Kopfstütze für ein Fahrzeug
JP5744629B2 (ja) * 2011-06-03 2015-07-08 株式会社日立ハイテクノロジーズ 電子顕微鏡及び電子線を用いた撮像方法
JP6289339B2 (ja) * 2014-10-28 2018-03-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び情報処理装置
WO2016143450A1 (ja) * 2015-03-10 2016-09-15 株式会社荏原製作所 検査装置
CN108603851B (zh) * 2016-03-16 2021-01-01 株式会社日立高新技术 缺陷检查装置
JP6957641B2 (ja) * 2017-11-27 2021-11-02 株式会社日立ハイテク 荷電粒子線装置およびそれを用いた試料観察方法
US11393657B2 (en) * 2018-09-11 2022-07-19 Hitachi High-Tech Corporation Electron beam device
JP7105368B2 (ja) * 2019-03-27 2022-07-22 株式会社日立ハイテク 荷電粒子線装置
JP7189103B2 (ja) * 2019-08-30 2022-12-13 株式会社日立ハイテク 荷電粒子線装置
JP7148467B2 (ja) * 2019-08-30 2022-10-05 株式会社日立ハイテク 荷電粒子線装置
US12609274B2 (en) * 2020-09-28 2026-04-21 Hitachi High-Tech Corporation Charged particle beam device
US12196802B2 (en) * 2020-09-29 2025-01-14 Hitachi High-Tech Corporation Semiconductor inspection device and method for inspecting semiconductor sample

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151483A (ja) * 2001-11-19 2003-05-23 Hitachi Ltd 荷電粒子線を用いた回路パターン用基板検査装置および基板検査方法
JP2006352026A (ja) 2005-06-20 2006-12-28 Sony Corp 半導体レーザ装置及び半導体レーザ装置の製造方法
JP2012009247A (ja) * 2010-06-24 2012-01-12 Topcon Corp 電子顕微鏡装置

Also Published As

Publication number Publication date
JPWO2020234987A1 (https=) 2020-11-26
TW202044311A (zh) 2020-12-01
JP7108788B2 (ja) 2022-07-28
DE112019007206B4 (de) 2026-01-22
TWI748404B (zh) 2021-12-01
DE112019007206T5 (de) 2022-01-05
US20240363306A1 (en) 2024-10-31
WO2020234987A1 (ja) 2020-11-26
US20220216032A1 (en) 2022-07-07
KR20210142703A (ko) 2021-11-25

Similar Documents

Publication Publication Date Title
KR102640025B1 (ko) 하전 입자선 장치
Meuret et al. Complementary cathodoluminescence lifetime imaging configurations in a scanning electron microscope
US11328897B2 (en) Charged particle beam device
Chee Quantitative dopant profiling by energy filtering in the scanning electron microscope
US7459681B2 (en) Scanning electron microscope
US11869745B2 (en) Charged particle beam device
Zani et al. Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy
Solà-Garcia Electron-matter interaction probed with time-resolved cathodoluminescence
Phillips et al. Cathodoluminescence efficiency dependence on excitation density in n-type gallium nitride
Morris et al. Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials
Sala Ultrafast scanning electron microscopy: charge dynamics at semiconductor and insulator surfaces
Mrkić et al. Gain suppression in LGAD detectors under focused and defocused femtosecond laser beam
TWI911743B (zh) 電子束應用裝置及時間常數計測方法
JP2001059826A (ja) 二次イオン質量分析法による微小領域の分析方法
JP4728800B2 (ja) 電子線ホログラフィーを用いた化合物半導体の不純物分布測定用試料の製造方法および不純物分布測定方法
Razeghi Semiconductor characterization techniques
Nakakura et al. Ultrafast Electron Microscopy for Spatial-Temporal Mapping of Charge Carriers
WO2023233657A1 (ja) 電子線応用装置及び電子ビーム発生方法
Sakamoto et al. Instrumental factors in resonance enhanced multi-photon ionization of FIB-sputtered atoms
WO2021010198A1 (ja) 顕微鏡システム、観察方法
Kane et al. Detection of high-speed voltage waveforms in GaN devices using electric-field-induced second-harmonic generation
Reimer Electron-Beam-Induced Current, Cathodoluminescence and Special Techniques
Betz et al. Microwave Photoconductivity Technique for the Analysis of Semiconductor Materials
Batson Atomic resolution electronic structure using spatially resolved electron energy loss spectroscopy
Margaritondo The role of photoemission spectroscopies in heterojunction research

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20211021

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20230630

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240122

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240220

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240221

End annual number: 3

Start annual number: 1

PG1601 Publication of registration