TWI748404B - 荷電粒子束裝置 - Google Patents

荷電粒子束裝置 Download PDF

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Publication number
TWI748404B
TWI748404B TW109112246A TW109112246A TWI748404B TW I748404 B TWI748404 B TW I748404B TW 109112246 A TW109112246 A TW 109112246A TW 109112246 A TW109112246 A TW 109112246A TW I748404 B TWI748404 B TW I748404B
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TW
Taiwan
Prior art keywords
light
sample
intensity
particle beam
per unit
Prior art date
Application number
TW109112246A
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English (en)
Chinese (zh)
Other versions
TW202044311A (zh
Inventor
庄子美南
津野夏規
太田洋也
備前大輔
川野源
Original Assignee
日商日立全球先端科技股份有限公司
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Publication of TW202044311A publication Critical patent/TW202044311A/zh
Application granted granted Critical
Publication of TWI748404B publication Critical patent/TWI748404B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2482—Optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW109112246A 2019-05-21 2020-04-10 荷電粒子束裝置 TWI748404B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2019/020065 2019-05-21
PCT/JP2019/020065 WO2020234987A1 (ja) 2019-05-21 2019-05-21 荷電粒子線装置

Publications (2)

Publication Number Publication Date
TW202044311A TW202044311A (zh) 2020-12-01
TWI748404B true TWI748404B (zh) 2021-12-01

Family

ID=73459313

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109112246A TWI748404B (zh) 2019-05-21 2020-04-10 荷電粒子束裝置

Country Status (6)

Country Link
US (2) US20220216032A1 (https=)
JP (1) JP7108788B2 (https=)
KR (1) KR102640025B1 (https=)
DE (1) DE112019007206B4 (https=)
TW (1) TWI748404B (https=)
WO (1) WO2020234987A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI908237B (zh) * 2023-09-26 2025-12-11 日商日立全球先端科技股份有限公司 帶電粒子束裝置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023145015A1 (ja) * 2022-01-28 2023-08-03 株式会社日立ハイテク 検査装置および膜質検査方法
WO2024069737A1 (ja) * 2022-09-27 2024-04-04 株式会社日立ハイテク 検査方法および荷電粒子線装置
KR20250090336A (ko) * 2022-12-20 2025-06-19 주식회사 히타치하이테크 시료의 특징량 도출 방법, 신호 처리 시스템을 조정하는 조정 방법 및 계측 시스템
JP2024173322A (ja) * 2023-06-02 2024-12-12 国立研究開発法人産業技術総合研究所 観察装置及び観察方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465781B1 (en) * 1999-06-11 2002-10-15 Hitachi, Ltd. Method and apparatus for inspecting or measuring a sample based on charged-particle beam imaging, and a charged-particle beam apparatus
US20030094572A1 (en) * 2001-11-19 2003-05-22 Hitachi, Ltd. Inspection system and inspection process for wafer with circuit using charged-particle beam
WO2005098895A2 (en) * 2004-04-02 2005-10-20 California Institute Of Technology Method and system for ultrafast photoelectron microscope
US20110315877A1 (en) * 2010-06-24 2011-12-29 Kabushiki Kaisha Topcon Electron Microscope Device
TW201637063A (zh) * 2015-03-10 2016-10-16 荏原製作所股份有限公司 檢查裝置
CN108603851A (zh) * 2016-03-16 2018-09-28 株式会社日立高新技术 缺陷检查装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006352026A (ja) * 2005-06-20 2006-12-28 Sony Corp 半導体レーザ装置及び半導体レーザ装置の製造方法
DE102007041496B3 (de) 2007-08-31 2009-02-26 Johnson Controls Gmbh Kopfstütze für ein Fahrzeug
JP5744629B2 (ja) * 2011-06-03 2015-07-08 株式会社日立ハイテクノロジーズ 電子顕微鏡及び電子線を用いた撮像方法
JP6289339B2 (ja) * 2014-10-28 2018-03-07 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び情報処理装置
JP6957641B2 (ja) * 2017-11-27 2021-11-02 株式会社日立ハイテク 荷電粒子線装置およびそれを用いた試料観察方法
US11393657B2 (en) * 2018-09-11 2022-07-19 Hitachi High-Tech Corporation Electron beam device
JP7105368B2 (ja) * 2019-03-27 2022-07-22 株式会社日立ハイテク 荷電粒子線装置
JP7189103B2 (ja) * 2019-08-30 2022-12-13 株式会社日立ハイテク 荷電粒子線装置
JP7148467B2 (ja) * 2019-08-30 2022-10-05 株式会社日立ハイテク 荷電粒子線装置
US12609274B2 (en) * 2020-09-28 2026-04-21 Hitachi High-Tech Corporation Charged particle beam device
US12196802B2 (en) * 2020-09-29 2025-01-14 Hitachi High-Tech Corporation Semiconductor inspection device and method for inspecting semiconductor sample

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465781B1 (en) * 1999-06-11 2002-10-15 Hitachi, Ltd. Method and apparatus for inspecting or measuring a sample based on charged-particle beam imaging, and a charged-particle beam apparatus
US20030094572A1 (en) * 2001-11-19 2003-05-22 Hitachi, Ltd. Inspection system and inspection process for wafer with circuit using charged-particle beam
WO2005098895A2 (en) * 2004-04-02 2005-10-20 California Institute Of Technology Method and system for ultrafast photoelectron microscope
US20110315877A1 (en) * 2010-06-24 2011-12-29 Kabushiki Kaisha Topcon Electron Microscope Device
TW201637063A (zh) * 2015-03-10 2016-10-16 荏原製作所股份有限公司 檢查裝置
CN108603851A (zh) * 2016-03-16 2018-09-28 株式会社日立高新技术 缺陷检查装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI908237B (zh) * 2023-09-26 2025-12-11 日商日立全球先端科技股份有限公司 帶電粒子束裝置

Also Published As

Publication number Publication date
JPWO2020234987A1 (https=) 2020-11-26
TW202044311A (zh) 2020-12-01
KR102640025B1 (ko) 2024-02-27
JP7108788B2 (ja) 2022-07-28
DE112019007206B4 (de) 2026-01-22
DE112019007206T5 (de) 2022-01-05
US20240363306A1 (en) 2024-10-31
WO2020234987A1 (ja) 2020-11-26
US20220216032A1 (en) 2022-07-07
KR20210142703A (ko) 2021-11-25

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