DE112017000333A5 - Optoelektronisches bauelement, optoelektronisches modul und verfahren zur herstellung eines optoelektronischen bauelements - Google Patents
Optoelektronisches bauelement, optoelektronisches modul und verfahren zur herstellung eines optoelektronischen bauelements Download PDFInfo
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- DE112017000333A5 DE112017000333A5 DE112017000333.4T DE112017000333T DE112017000333A5 DE 112017000333 A5 DE112017000333 A5 DE 112017000333A5 DE 112017000333 T DE112017000333 T DE 112017000333T DE 112017000333 A5 DE112017000333 A5 DE 112017000333A5
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- optoelectronic
- optoelectronic component
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- 230000005693 optoelectronics Effects 0.000 title 3
- 238000004519 manufacturing process Methods 0.000 title 1
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/384—Bump effects
- H01L2924/3841—Solder bridging
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (3)
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DE102016100320.4A DE102016100320A1 (de) | 2016-01-11 | 2016-01-11 | Optoelektronisches Bauelement, optoelektronisches Modul und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102016100320.4 | 2016-01-11 | ||
PCT/EP2017/050407 WO2017121725A1 (de) | 2016-01-11 | 2017-01-10 | Optoelektronisches bauelement, optoelektronisches modul und verfahren zur herstellung eines optoelektronischen bauelements |
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DE112017000333A5 true DE112017000333A5 (de) | 2018-09-20 |
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DE112017000333.4T Pending DE112017000333A5 (de) | 2016-01-11 | 2017-01-10 | Optoelektronisches bauelement, optoelektronisches modul und verfahren zur herstellung eines optoelektronischen bauelements |
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CN (1) | CN108521833B (de) |
DE (2) | DE102016100320A1 (de) |
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DE102017126268A1 (de) | 2017-11-09 | 2019-05-09 | Osram Opto Semiconductors Gmbh | Träger, Anordnung mit einem Substrat und einem Träger und Verfahren zum Herstellen eines Trägers |
DE102019106546A1 (de) * | 2019-03-14 | 2020-09-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil |
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DE3435306A1 (de) | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
US20080035947A1 (en) * | 2003-12-09 | 2008-02-14 | Weaver Jr Stanton Earl | Surface Mount Light Emitting Chip Package |
WO2006046655A1 (ja) | 2004-10-27 | 2006-05-04 | Kyocera Corporation | 発光素子搭載用基板、発光素子収納用パッケージ、発光装置および照明装置 |
KR100691363B1 (ko) | 2005-09-23 | 2007-03-12 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
US7672111B2 (en) * | 2006-09-22 | 2010-03-02 | Toto Ltd. | Electrostatic chuck and method for manufacturing same |
TW200903834A (en) | 2007-07-05 | 2009-01-16 | Bright Led Electronics Corp | High heat-dissipation light emitting diode device |
TWI442595B (zh) | 2007-07-25 | 2014-06-21 | Everlight Electronics Co Ltd | 發光二極體裝置 |
DE102011101052A1 (de) * | 2011-05-09 | 2012-11-15 | Heraeus Materials Technology Gmbh & Co. Kg | Substrat mit elektrisch neutralem Bereich |
DE102011103412A1 (de) | 2011-06-06 | 2012-12-06 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optolektronischen Halbleiterbauelements und derartiges Halbleiterbauelement |
US8785961B2 (en) * | 2012-02-17 | 2014-07-22 | Invensas Corporation | Heat spreading substrate |
DE102012102847A1 (de) | 2012-04-02 | 2013-10-02 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements |
DE102012207519A1 (de) * | 2012-05-07 | 2013-11-07 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines bauelementträgers, einer elektronischen anordnung und einer strahlungsanordnung und bauelementträger, elektronische anordnung und strahlungsanordnung |
JP6066643B2 (ja) | 2012-09-24 | 2017-01-25 | デクセリアルズ株式会社 | 異方性導電接着剤 |
US9105829B2 (en) * | 2013-03-15 | 2015-08-11 | Cooledge Lighting Inc. | Thermal management in electronic devices with yielding substrates |
TWI614920B (zh) | 2014-05-19 | 2018-02-11 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
US9728698B2 (en) | 2014-06-03 | 2017-08-08 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
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US20210184092A1 (en) | 2021-06-17 |
CN108521833B (zh) | 2021-10-01 |
WO2017121725A1 (de) | 2017-07-20 |
DE102016100320A1 (de) | 2017-07-13 |
US10944033B2 (en) | 2021-03-09 |
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