CN108521833A - 光电子器件、光电子模块和用于制造光电子器件的方法 - Google Patents

光电子器件、光电子模块和用于制造光电子器件的方法 Download PDF

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CN108521833A
CN108521833A CN201780005307.2A CN201780005307A CN108521833A CN 108521833 A CN108521833 A CN 108521833A CN 201780005307 A CN201780005307 A CN 201780005307A CN 108521833 A CN108521833 A CN 108521833A
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electronic device
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CN108521833B (zh
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卢卡·海贝尔格
大卫·拉奇
马蒂亚斯·斯佩尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Abstract

一种光电子器件(100)，所述光电子器件包括辐射侧(2)，经由所述辐射层在运行时耦合输入或耦合输出电磁辐射。具有至少两个导电的接触元件(31，32)的接触侧(3)与辐射侧相对置，所述接触元件用于器件的外部电接触。在辐射侧和接触侧之间设置有具有有源层(10)的半导体层序列(1)，所述有源层在正常运行时发射或吸收电磁辐射。接触元件在接触侧上彼此间隔开并且在器件的未安装状态下在接触侧上完全地或部分地露出。接触侧在接触元件之间的区域部分地或完整地用电绝缘的冷却元件(33)覆盖，其中冷却元件在朝向一个或两个接触元件(31，32)的接触侧的俯视图中被部分地遮盖。冷却元件(33)与接触侧直接接触并且具有至少30W/(m·K)的热导率。

Description

光电子器件、光电子模块和用于制造光电子器件的方法
技术领域
提出一种光电子器件和一种光电子模块。此外，提出一种用于制造光电子器件的方法。
发明内容
要实现的目的在于：提出具有有效的散热的一种光电子器件以及一种光电子模块。另一要实现的目的在于：提出一种用于制造这种器件的方法。
所述目的还通过独立权利要求的主题和方法以及通过权利要求11的主题来实现。有利的设计方案和改进形式是从属权利要求的主题。
根据至少一个实施方式，光电子器件包括辐射侧，经由所述辐射侧在运行时耦合输入或耦合输出电磁辐射，如可见光或UV辐射或红外辐射。因此，辐射侧能够构成为辐射入射面或辐射出射面。
光电子器件例如为光电子半导体芯片，如其直接在从晶片复合件中分割之后形成。在光电子半导体芯片中，半导体芯片平行于辐射侧的例如直至±30％或±10％或±5％的横向扩展与半导体芯片中的有源层的横向扩展一样大。特别地，这种半导体芯片的横向于辐射侧伸展的侧面于是例如具有出自晶片复合件的分割工艺的痕迹。
根据至少一个实施方式，光电子器件包括与辐射侧相对置的接触侧，所述接触侧具有至少两个、优选刚好两个导电的接触元件。接触侧例如能够是光电子器件的与辐射侧相对置的整个后侧。例如，辐射侧和接触侧形成主侧，即器件的具有最大的横向扩展的侧。
接触元件例如是金属的接触元件，尤其是焊接元件或焊盘。例如，接触元件具有由不同的金属单层构成的层结构。在此，例如能够考虑由镍、金、铂、铝、银、锡构成的单层。
接触元件例如覆盖接触侧的至少50％或至少60％或至少70％或至少80％。特别地，接触元件从接触侧突出，即沿垂直于且远离接触侧的方向超出接触侧。接触元件的厚度、即接触元件的从接触侧突出的部分例如为至少500nm或至少1μm或至少2μm。替选地或附加地，接触元件的厚度为最高5μm或最高4μm或最高3μm。
接触元件中的一个接触元件优选是p型接触元件，另一接触元件优选是n型接触元件。电子经由n型接触元件注入到器件中，空穴经由p型接触元件注入到器件中。
根据至少一个实施方式，光电子器件包括设置在辐射侧和接触侧之间的、具有有源层的半导体层序列。有源层在正常运行时优选发射或吸收上面提出的电磁辐射。接触侧的和/或辐射侧的大部分例如能够通过半导体层序列形成。
半导体层序列例如基于III-V族化合物半导体材料。半导体材料例如为氮化物化合物半导体材料，如AlnIn1-n-mGamN，或为磷化物化合物半导体材料，如AlnIn1-n-mGamP，或者也为砷化物化合物半导体材料，如AlnIn1-n-mGamAs，其中分别有0≤n≤1，0≤m≤1并且m+n≤1。在此，半导体层序列能够具有掺杂物以及附加的组成部分。然而，为了简单性仅说明半导体层序列的晶格的主要组成部分，即Al、As、Ga、In、N或P，即使这些主要组成部分能够部分地由少量的其他物质替代和/或补充时也如此。优选地，半导体层序列基于AlInGaN。
有源层例如具有至少一个pn结和/或呈单量子阱、简称SQW形式的或呈多量子阱结构、简称MQW的形式的量子阱结构。
根据至少一个实施方式，接触侧上的接触元件彼此间隔开。优选地，接触侧上的接触元件在器件的未安装状态下完全地或部分地露出。特别地，接触元件因此在未安装状态下在接触侧上可自由触及并且允许电接触器件。
根据至少一个实施方式，接触侧的在接触元件之间的区域部分地或完整地用一个、尤其刚好一个电绝缘的冷却元件覆盖。冷却元件优选连续地构成。例如，接触元件在朝向接触侧的俯视图中具有矩形的基本形状。在两个接触元件之间能够构成中间空间或间隙。中间空间或间隙在俯视图中能够部分地或完整地由冷却元件覆盖或填充。特别地，冷却元件能够形状配合地仿照接触侧的和接触元件的邻接于中间空间的区域。
冷却元件例如能够为电绝缘层。特别地，冷却元件的横向于或垂直于接触侧测量的厚度例如为至少100nm或至少200nm或至少500nm。替选地或附加地，冷却元件的厚度为最高5μm或最高2μm或最高1.5μm或最高1μm。
根据至少一个实施方式，冷却元件与接触层直接机械接触。特别地，在中间空间中，冷却元件能够与接触侧和可能与接触元件直接机械接触。冷却元件的热导率优选为至少30W/(m·K)或至少60W/(m·K)或至少100W/(m·K)或至少150W/(m·K)。
在至少一个实施方式中，光电子器件包括辐射侧，经由所述辐射层在运行时耦合输入或耦合输出电磁辐射。接触侧与辐射侧相对置，所述接触侧具有至少两个导电的接触元件，所述接触元件用于器件的外部电接触。此外，光电子器件包括设置在辐射侧和接触侧之间的、具有有源层的半导体层序列，所述有源层在正常运行时发射或吸收电磁辐射。接触元件在接触侧上彼此间隔开，并且在器件的未安装状态下在接触侧上完全地或部分地露出。接触侧的在接触元件之间的区域部分地或完整地用电绝缘的冷却元件覆盖。冷却元件与接触侧直接接触并且具有至少30W/(m·K)的热导率。
此外，在此描述的发明基于如下构思：在器件的后侧上的接触元件或焊盘通常经受一定的设计条件。特别地，优选不应将接触元件之间的间距选择得过小，以便在将器件焊接在联接载体上时避免焊料的溢流，即所谓的桥接，进而避免接触元件之间的伴随的短路。在常见的焊接方法中，接触元件之间的间距例如在150μm和250μm之间。
由于对越来越小的器件或半导体芯片、例如沿横向方向的尺寸为最高500μm×500μm的器件或半导体芯片的持续的需求,将后侧上的接触元件也相应地选择得越来越小。这加难器件的有效散热。由此，器件的效率还有最大允许的电流变小。
为了尽管如此仍实现有效的散热，接触元件之间的间距能够选择得较小，例如最高150μm的值。然而在该情况下，通常采用较耗费的焊接方法，例如共晶焊接，所述焊接方法通常在显著更高的温度下执行，这又提高制造的成本。这引起对可能可使用的联接载体的限制，因为所述联接载体可能不能够承受高的温度，其中能够将器件焊接到所述联接载体上。
此外，在此处描述的发明中，使用如下构思，以如下方式改进器件的散热：扩大后侧上的用于进行有效散热的面积。这例如通过如下方式进行：在接触元件之间安置绝缘的冷却元件。于是，接触元件连同冷却元件一起例如能够几乎覆盖器件的整个后侧或接触侧。接触元件之间的所需要的中间空间和间隙以该方式同样用于导出热量。此外，通过冷却元件由于相对于接触元件减小的、用焊料的可润湿性，防止焊料的溢流，这允许接触元件之间的更小的间距，例如最高50μm的间距。
根据至少一个实施方式，器件具有稳定器件的载体。载体在此能够设置在半导体层序列和接触侧之间，其中接触侧于是例如通过载体形成或者是载体的一部分。载体优选包括电绝缘材料或由其构成。由于载体，器件能够是自承的。
载体尤其是塑料载体或硅树脂载体或硅载体或SiC载体或锗载体或玻璃载体。载体也能够具有氧化硅、例如SiO2，或环氧化物，或由其构成。载体的材料尤其与冷却元件的材料不同。优选地，载体为囊封件，英文为Mold，优选为塑料囊封件或硅树脂囊封件或SiO2囊封件，所述囊封件还在晶片复合件中就囊封到半导体层序列上并且随后硬化。优选地，器件不具有用于半导体层序列的生长衬底。
器件例如为自承的、囊封的半导体芯片，英文为Mold Supported Chip，简称MSC。在这种器件中，移除用于半导体层序列的生长衬底，并且进行稳定的载体通过囊封件形成。
载体的垂直于接触侧测量的厚度例如为至少100μm或至少120μm或至少150μm。替选地或附加地，载体的厚度为最高200μm或最高180μm或最高170μm。特别地，不具有载体的器件不是机械自承的。所述器件因此例如除了载体之外不包括另外的载体，尤其不包括另外的机械自承的载体。
根据至少一个实施方式，器件包括至少一个冷却孔以及至少两个接触孔，其中冷却孔和接触孔从接触侧起延伸经过整个载体并且伸展直至半导体层序列。接触孔和冷却孔例如能够为载体中的圆柱形的或长方体形的凹部，其中圆柱或长方体的底面在接触侧和半导体层序列的区域中形成。
根据至少一个实施方式，接触孔、优选还有冷却孔用导电材料、例如金属填充，尤其完整地填充。金属例如能够具有镍和/或铜或由其构成。半导体层序列能够经由接触孔中的导电材料与接触元件导电地连接。
根据至少一个实施方式，冷却孔中的能导热的填料、例如上述金属与半导体层序列和/或与接触侧上的冷却元件直接接触。能导热的填料在正常运行时优选不用于电接触器件，而是用于将冷却元件热耦联到半导体层序列上。因此，优选不经由冷却孔或填料在接触侧和半导体层序列之间交换载流子。填料的热导率例如为至少30W/(m·K)。
根据至少一个实施方式，载体具有最高10W/(m·K)或最高5W/(m·K)或最高1W/(m·K)的热导率。
根据至少一个实施方式，器件包括多个冷却孔。例如，分别在两个接触孔之间设置有冷却孔。例如，分别在与n型接触元件相关联的接触孔和最近的、与p型接触元件相关联的接触孔之间设置有冷却孔。
根据至少一个实施方式，在辐射侧和半导体层序列之间设置有稳定器件的载体，如蓝宝石载体。载体于是例如也用作为用于半导体层序列的生长衬底。于是，除生长衬底之外，优选不使用稳定器件的另一载体或另一自承的载体。特别地，器件能够为所谓的倒装芯片。
替选地，器件例如不具有载体并且不是机械自承的。通过焊接或安装在联接载体上，器件才机械稳定。
根据至少一个实施方式，在朝向接触侧的俯视图中，接触侧的至少70％或至少80％或至少90％由冷却元件和接触元件覆盖。这就是说，例如，接触侧的至少70％能够用于导出在运行时在器件中形成的热量。
根据至少一个实施方式，接触侧上的接触元件之间的间距、例如最小间距或平均间距为最高50μm或最高30μm或最高10μm或最高5μm。
根据至少一个实施方式，在朝向接触侧的俯视图中，冷却元件部分地遮盖一个或两个接触元件。这就是说，冷却元件从两个接触元件之间的中间空间引导直至一个或多个接触元件的背离辐射侧的一侧。特别地，冷却元件能够一致地或形状配合地仿照接触元件的邻接于中间空间的棱边。优选地，以该方式，两个接触元件的未由冷却元件覆盖的区域之间的最小间距大于接触元件的最小间距。尤其优选地，在朝向接触侧的俯视图中观察，接触元件于是在未安装状态下除了由冷却元件遮盖之外，未由其他元件或其他材料遮盖。
根据至少一个实施方式，两个接触元件的未由冷却元件覆盖的区域之间的最小间距为至少150μm或至少170μm或至少200μm。在该情况下，尽管接触元件置于彼此靠近，接触元件的例如用于焊料连接的可自由触及的区域仍满足对最小间距的上面描述的最低要求。换言之，一个接触元件的未用冷却元件覆盖的区域至另一接触元件的未用冷却元件覆盖的区域之间的最短连接为至少150μm。
根据至少一个实施方式，冷却元件与一个或两个接触元件直接机械接触。
根据至少一个实施方式，冷却元件在远离器件的方向上与接触元件平接。冷却元件于是例如具有垂直于接触侧测量的厚度，所述厚度基本上对应于接触元件的厚度。在此，“基本上”例如表示：出现最高20％或10％的偏差。
根据至少一个实施方式，冷却元件具有氧化物陶瓷或非氧化物陶瓷或环氧化物或阻焊膏，或者由其构成。
根据至少一个实施方式，冷却元件具有如下材料中的一种或多种或由其构成：氮化铝，如AlN；碳化硅，如SiC、尤其SSiC、αSiC、具有石墨的SSiC或SiSiC；氮化硅，如SiN；氧化铝，如Al2O3。
此外，提出一种光电子模块。光电子模块例如具有在此描述的光电子器件。全部对于光电子器件公开的特征因此也对于光电子模块公开，并且反之亦然。
根据至少一个实施方式，光电子模块具有联接载体。联接载体例如为电路板，如印刷电路板，英文为Printed Circuit Board，简称PCB，或为金属芯电路板，简称MCB，或为具有集成的微电子装置的硅载体，或为具有例如电端子的陶瓷载体。
联接载体优选具有至少两个能导电的、例如金属的联接元件。联接元件在器件安装之前例如露出，并且能够在联接载体上形成焊盘或焊接区域。
光电子器件优选以接触侧朝前安装在联接载体上，并且与联接载体固定地连接。在此尤其地，两个接触元件中的每个接触元件布设在自身的一对一相关联的联接元件上，并且与所述联接元件分别经由导电的连接层导电地连接。导电的连接层例如能够为焊膏或导电胶。导电的连接层例如不仅与相关联的接触元件、而且也与相关联的联接元件直接机械接触。光电子器件的接触元件也能够与联接载体的联接元件直接电接触和机械接触。
经由联接载体，优选在规定的运行中将电流注入到光电子器件中。
根据至少一个实施方式，接触元件的导电的连接层彼此分开并且间隔开并且以该方式彼此绝缘。借此防止在接触元件或连接层之间的短路。
根据至少一个实施方式，在导电的连接层之间设置有导热的连接层。导热的连接层优选是电绝缘的。例如，在此为导热膏，例如为基于硅树脂或氧化锌的导热膏，所述导热膏优选具有为至少10W/(m·K)或30W/(m·K)或50W/(m·K)或100W/(m·K)的热导率。
根据至少一个实施方式，导热的连接层与冷却元件和联接载体直接接触。以该方式，经由冷却元件和导热的连接层能够将在运行中产生的热量从器件导出到联接载体上。
根据至少一个实施方式，两个接触元件的导电的连接层连贯并且形成共同的导电的连接层。在该情况下，整个导电的连接层优选沿平行于接触侧的横向方向起电绝缘的作用。例如，为所谓的各向异性的传导膏，英文为Anistropic Conductive Paste，简称ACP。这种膏例如包括绝缘的基体材料和嵌入其中的金属小球。在横向方向上，小球通过基体材料彼此间隔开，使得沿横向方向不发生电通流。相反地，沿垂直于接触侧的竖直方向，器件和联接载体强烈地彼此挤压，使得导电的连接层的厚度降低到金属小球的直径，进而电通流沿竖直方向能够经由金属小球流出。
根据至少一个实施方式，在朝向接触侧的俯视图中，共同的导电的连接层遮盖冷却元件并且与冷却元件和优选还有联接载体直接接触。
此外，提出一种用于制造光电子器件的方法。所述方法尤其适合于制造在此描述的器件。全部结合光电子器件公开的特征因此也对于方法公开并且反之亦然。
根据至少一个实施方式，方法包括步骤A)：其中提供组件，所述组件具有辐射侧、与辐射侧相对置的接触侧和在接触侧和辐射侧之间的半导体层序列。在此，半导体层序列具有有源层，所述有源层在正常运行中发射或吸收电磁辐射。接触侧还具有至少两个导电的接触元件以外部电接触器件。
在此，接触侧上的接触元件彼此间隔开并且露出。
在步骤B)中，将具有开口的掩模施加到接触侧上。在此，掩模部分地或完整地覆盖接触元件。在掩模的开口中，部分地或完整地露出接触侧的在接触元件之间的区域。
在步骤C)中，将电绝缘材料沉积到掩模上和开口之内，其中电绝缘材料具有至少30W/(m·K)的热导率，并且在接触元件之间的区域中与接触侧直接机械接触。
在另一步骤D)中，移除掩模连同处于其上的电绝缘材料，其中接触元件之间的保留在组件上的电绝缘材料形成用于光电子器件的冷却元件。
步骤A)至D)优选单独地且依次地以所提出的顺序执行。
根据至少一个实施方式，具有开口的掩模借助于光刻方法制造。于是，掩模例如由光刻胶形成。
根据至少一个实施方式，电绝缘材料经由原子层沉积、简称ALD或经由化学气相沉积、简称CVD或经由溅射来沉积。
附图说明
在下文中，参照附图根据实施例详细阐述在此描述的光电子器件、在此描述的光电子模块以及在此描述的方法。在此，相同的附图标记在各个附图中说明相同的元件。然而，在此不以合乎比例的关系示出，更确切地说，为了更好的理解能够夸大地示出个别元件。
附图示出：
图1A和1B以朝向接触侧的俯视图示出光电子器件的一个实施例和变型形式，
图2A至2D以侧向横截面图和朝向接触侧的俯视图示出制造方法的一个实施例中的不同的位置，
图3A和3B以侧向横截面图和朝向接触侧的俯视图示出光电子器件的实施例，和
图4A和4B示出光电子模块的实施例的侧向横截面图。
具体实施方式
在图1A中以朝向接触侧3的俯视图示出光电子器件100的一个实施例。可见两个矩形构成的接触元件31、32，所述接触元件设置在接触侧3上。接触元件31、32例如具有不同的极性。例如，左侧的接触元件31是n型接触元件，右侧的接触元件32是p型接触元件。接触元件31、32在正常运行时用于器件100的外部电接触。
接触元件例如是从接触侧3突出于绘图平面的焊接接触件或焊盘，所述焊接接触件或焊盘具有由Ni/Au、Ni/Pt/Au或Au/Sn构成的层结构或由其构成。
在两个接触元件31、32之间形成中间空间或间隙，所述中间空间或间隙将两个接触元件31、32彼此间隔开。在该区域中设有电绝缘的冷却元件33，所述冷却元件完整地遮盖或填充中间空间或间隙。此外，冷却元件33在朝向接触侧3的俯视图中部分地遮盖两个接触元件31、32的邻接于中间空间的区域。冷却元件33也在俯视图中矩形地并且尤其连续地构成。
两个接触元件31、32之间的间距在图1A中例如最高为50μm，而冷却元件33的宽度例如为至少150μm。以该方式，接触元件31、32的未由冷却元件33遮盖的区域的间距同样至少为150μm。
由此能够防止：在例如经由焊料连接来接触器件100时造成焊料的溢流进而造成短路。
冷却元件33例如由氧化物陶瓷、如Al2O3，或非氧化物陶瓷、如AlN或SiC形成。优选地，冷却元件33的热导率至少为30W/(m·K)。
在图1A中接触侧3的例如至少90％由冷却元件3和接触元件31、32遮盖。以该方式，能够进行从器件100经由接触侧3的有效的散热。
在图1B中以朝向接触侧3的俯视图示出光电子器件100的一个变型形式。与图1A不同，缺少电绝缘的冷却元件33，所述冷却元件优选不可由焊料润湿或由焊料差地润湿。这具有两种结果。一方面，两个接触元件31、32之间的间距选择得更大，以便防止在开始接触时焊料溢流。另一方面，由于缺少冷却元件33，接触侧3的能够用于导出热量的份额主要限制于接触元件31、32的区域。借此，接触侧3的适合于导出热量的有效面积相对于图1A的实施例减小。
在图2A中示出用于制造光电子器件100的方法中的第一位置。图2A的左侧图示出具有半导体层序列1和载体4的组件的侧向横截面图。半导体层序列1例如基于GaN。载体4例如是用于半导体层序列1的生长衬底，例如蓝宝石衬底。半导体层序列1包括有源层10，经由所述有源层在正常运行时发射或吸收电磁辐射。载体4的背离半导体层序列1的一侧形成辐射侧2，经由所述辐射侧将电磁辐射从组件中耦合输出或耦合输入到组件中。半导体层序列1的背离载体4的一侧形成具有两个接触元件31、32的接触侧3。在图2A中示出的组件例如为所谓的倒装芯片。
图2A的右侧图以朝向接触侧3的俯视图示出组件。
在图2B中示出方法中的如下位置，在所述位置中，在接触侧3上施加有掩模5。掩模5例如由光刻胶构成。此外，掩模5具有开口50。开口50能够经由光刻方法引入到掩模5中。
在开口50的区域中，完整地露出在两个接触元件31、32之间的中间空间。此外，在开口50的区域中分别露出两个接触元件31、32的一部分。接触侧3的剩余部分，尤其接触元件31、32的剩余部分，如也在图2B的右侧图中的俯视图中可见的那样，完整地由掩模5遮盖。
在图2C中示出方法中的如下位置，在所述位置中，在接触侧3和掩模5上沉积有呈层的形式的电绝缘材料330。沉积例如借助于ALD或CVD或溅射来进行。绝缘材料例如为AlN或SiC。电绝缘材料330在施加时在掩模5的开口50的区域中与接触元件31、32和接触侧3直接机械接触。特别地，电绝缘材料330完整地填充在两个接触元件31、32之间的中间空间，并且分别遮盖接触元件31、32的露出的区域。
接触元件31、32上的电绝缘材料330的层厚度例如在100nm和5μm之间，其中包括边界值。
在图2D中示出方法中的在将掩模5从接触侧3剥离之后的位置。在此，将电绝缘材料330的沉积在掩模5上的组成部分随掩模5一起移除。保留电绝缘的冷却元件33，所述冷却元件填充在两个接触元件31、32之间的中间空间并且遮盖接触元件31、32的一部分。
在图3A中以横截面图和朝向接触侧3的俯视图示出光电子器件100的另一实施例。可见的是：与在之前的实施例中不同，半导体层序列1设置在载体4和辐射侧2之间。载体4在该情况下不是生长载体，而是例如是塑料载体。用于半导体层序列1的生长衬底已经移除。图3A的器件100尤其是自承的、囊封的半导体芯片，所谓的Mold Supported Chip(模支撑芯片)，简称MSC。在该情况下，载体4例如是塑料囊封件。
载体4具有接触孔41、42和冷却孔43。接触孔41、42和冷却孔43从接触侧3起延伸直至半导体层序列1。
接触孔41、42以及冷却孔43例如用金属、例如镍或铜填充。在接触侧3上，接触孔41、42和冷却孔43的金属与接触元件31、32和冷却元件33直接接触。经由接触孔41、42，在运行时对半导体层序列1通电。而冷却孔43不用于在接触侧3和半导体层序列1之间交换载流子。
经由接触孔41、42和冷却孔43，将由半导体层序列1在运行时产生的热量朝接触侧3的方向散热。
在图3B中，示出朝向接触侧3的俯视图，其中移除接触元件31、32和冷却元件33。可见的是：接触孔41、42和冷却孔43矩阵状地设置。具有多个冷却孔43的一列设置在分别具有多个接触孔41、42的两列之间。在图3A中，由唯一的冷却元件33遮盖多个冷却孔43的列，具有接触孔41、42的两列分别由唯一的接触元件31、32遮盖。
在图4A和4B的实施例中，分别示出光电子模块1000的侧向横截面图。光电子模块1000在此包括根据图3A、3B的实施例的光电子器件100。此外，光电子模块1000包括具有至少两个联接元件201、202的联接载体200。光电子器件100以接触侧3向前固定在联接载体200上。在此，接触元件31、32分别经由导电的连接层231、232与优选金属的联接元件201、202连接。导电的连接层231、232例如为焊膏或导电胶。
联接载体200例如是具有微电子装置的硅载体，经由所述硅载体在所提出的运行中电接触器件100。
此外，在图4A中可见：冷却元件33经由导热的连接层233与联接载体200连接。在此，导热的连接层233不仅与冷却元件33、而且也与联接载体200的例如金属的冷却面203直接接触。以该方式，经由冷却元件33和导热的连接层233能够将热量从器件100导出到联接载体200上。导热的连接层233例如为导热膏。
在图4B中，与图4A不同地，在器件100和联接载体200之间形成唯一的连贯的连接层231、232。共同的连接层231、232不仅与第一接触元件31、而且也与第二接触元件32和冷却元件33直接接触。例如，整个连接层231、232由各向异性的传导膏、ACP形成。以该方式，防止在接触元件31、32之间的短路，但是尽管如此仍确保将电流经由联接载体200输送至器件100。此外，经由共同的连接层231、232，将由接触元件31、32和冷却元件33发出的热量传递到联接载体200上。
本申请要求德国专利申请DE 102016100320.4的优先权，其公开内容通过参考并入本文。
本发明并不局限于根据实施例进行的描述。更确切地说，本发明包括任意新的特征以及特征的任意组合，这尤其包含权利要求中的特征的任意组合，即使这些特征或组合本身没有明确地在权利要求或实施例中说明的情况下也同样如此。
附图标记列表
1 半导体层序列
2 辐射侧
3 接触侧
4 载体
10 有源层
31 接触元件
32 接触元件
33 冷却元件
41 接触孔
42 接触孔
43 冷却孔
100 光电子器件
200 联接载体
201 联接元件
202 联接元件
203 冷却面
231 导电的连接层
232 导电的连接层
233 导热的连接层
330 电绝缘材料
1000 光电子模块

Claims (15)

1.一种光电子器件(100)，所述光电子器件具有：
-辐射侧(2)，经由所述辐射层在运行时耦合输入或耦合输出电磁辐射，
-与所述辐射侧(2)相对置的接触侧(3)，所述接触侧具有至少两个导电的接触元件(31，32)，所述接触元件用于外部电接触所述器件(100)，
-设置在所述辐射侧(2)和所述接触侧(3)之间的、具有有源层(10)的半导体层序列(1)，所述有源层在正常运行时发射或吸收电磁辐射，其中
-所述接触元件(31，32)在所述接触侧(3)上彼此间隔开，并且在所述器件(100)的未安装状态下完全地或部分地在所述接触侧(3)上露出，
-所述接触侧(3)的在所述接触元件(31，32)之间的区域部分地或完整地用电绝缘的、连续地构成的冷却元件(33)覆盖，
-所述冷却元件(33)与所述接触侧(3)直接接触，并且具有至少为30W/(m·K)的热导率，
-在朝向一个或两个接触元件(31，32)的所述接触侧(3)的俯视图中，所述冷却元件(33)被部分地遮盖。
2.根据权利要求1所述的光电子器件(100)，所述光电子器件还具有：
-在所述半导体层序列(1)和所述接触侧(3)之间的机械稳定所述器件(100)的载体(4)，其中所述接触侧(3)通过所述载体(4)形成，
-至少一个冷却孔(43)以及至少两个接触孔(41，42)，其中所述冷却孔(43)和所述接触孔(41，42)从所述接触侧(3)起延伸经过整个所述载体(4)，并且伸展直至所述半导体层序列(1)，
-所述接触孔(41，42)以及所述冷却孔(43)填充有金属，
-所述半导体层序列(1)经由所述接触孔(31，32)中的所述金属与所述接触元件(31，32)电连接，
-所述冷却孔(43)中的所述金属与所述接触侧(3)上的所述冷却元件(33)直接接触，并且在正常运行时不用于电接触所述器件(100)，
-所述载体(4)具有最高为10W/(m·K)的热导率。
3.根据权利要求1所述的光电子器件(100)，其中
-在所述辐射侧(2)和所述半导体层序列(1)之间设置有稳定所述器件(100)的载体(4)，或者
-所述器件(100)不具有载体(4)并且不是机械自承的。
4.根据上述权利要求中任一项所述的光电子器件(100)，其中
-所述冷却元件(33)的热导率至少为100W/(m·K)，
-在朝向所述接触侧(3)的俯视图中，所述接触侧(3)的至少70％由所述冷却元件(33)和所述接触元件(31，32)覆盖。
5.根据上述权利要求中任一项所述的光电子器件(100)，其中
-所述接触侧(3)上的所述接触元件(31，32)之间的间距最高为50μm，
-两个所述接触元件(31，32)的未由所述冷却元件(33)覆盖的区域之间的最小间距至少为150μm。
6.根据上述权利要求中任一项所述的光电子器件(100)，
其中所述冷却元件(33)与所述接触元件(31，32)中的一个或两个直接接触。
7.根据上述权利要求中任一项所述的光电子器件(100)，
其中所述冷却元件(33)的沿垂直于所述接触侧(3)的方向测量的厚度在100nm和5μm之间，其中包括边界值。
8.根据上述权利要求中任一项所述的光电子器件(100)，
其中所述冷却元件(33)具有氧化物陶瓷或非氧化物陶瓷或环氧化物或阻焊膏，或者由其构成。
9.根据上一项权利要求所述的光电子器件(100)，
其中所述冷却元件(33)具有如下材料中的一种或多种或者由其构成：氮化铝、碳化硅、氧化铝、氮化硅。
10.一种光电子模块(1000)，所述光电子模块具有：
-联接载体(200)，所述联接载体具有至少两个能导电的联接元件(201，202)，
-根据上述权利要求中任一项所述的光电子器件(100)，所述光电子器件以所述接触侧(3)朝前安装在所述联接载体(200)上，并且与所述联接载体(200)固定地连接，
-两个所述接触元件(31，32)中的每个接触元件平放在自身相关联的联接元件(201，202)上，并且与所述联接元件分别经由导电的连接层(231，232)导电地连接。
11.根据上一项权利要求所述的光电子模块(1000)，其中
-所述接触元件(31，32)的所述导电的连接层(231，232)彼此分开并且间隔开，
-在所述导电的连接层(231，232)之间设置有导热的连接层(233)，
-所述导热的连接层(233)与所述冷却元件(33)和所述联接载体(200)直接接触。
12.根据权利要求10所述的光电子模块(1000)，其中
-所述接触元件(31，32)的所述导电的连接层(231，232)连贯并且形成共同的导电的连接层，
-所述共同的导电的连接层沿平行于所述接触侧(3)的横向方向起绝缘作用，
-在朝向所述接触侧(3)的俯视图中，所述共同的导电的连接层遮盖所述冷却元件(33)并且与所述冷却元件直接接触。
13.一种用于制造光电子器件(100)的方法，所述方法具有如下步骤：
A)提供组件，所述组件具有辐射侧(2)、相对置的接触侧(3)和在所述接触侧(3)和所述辐射侧(2)之间的半导体层序列(1)，其中
-所述半导体层序列(1)具有有源层(10)，所述有源层在正常运行中发射或吸收电磁辐射，
-所述接触侧(3)具有用于外部电接触所述器件(100)的至少两个导电的接触元件(31，32)，
-所述接触元件(31，32)在所述接触侧(3)上彼此间隔开并且露出；
B)将具有开口(50)的掩模(5)施加到所述接触侧(3)上，其中
-所述掩模(5)部分地或完整地覆盖所述接触元件(31，32)，
-在所述开口(50)中部分地或完整地露出所述接触侧(3)的在所述接触元件(31，32)之间的区域，
C)将电绝缘材料(330)沉积到所述掩模(5)上和所述开口(50)之内，其中所述电绝缘材料(330)具有至少为30W/(m·K)的热导率并且与所述接触侧(3)直接接触；
D)移除所述掩模(5)连同处于其上的所述电绝缘材料(330)，其中在所述接触元件(31，32)之间保留在所述组件上的所述电绝缘材料形成冷却元件(33)，所述冷却元件连续地构成，并且在朝向所述接触侧(3)的俯视图中，部分地遮盖一个或两个接触元件(31，32)。
14.根据上一项权利要求所述的方法，
其中借助于光刻方法制造具有所述开口(50)的所述掩模(5)。
15.根据上述权利要求中任一项所述的方法，
其中经由原子层沉积或化学气相沉积或溅射来沉积所述电绝缘材料(330)。
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