DE112010000890T5 - Magnetfeld-Erfassungsvorrichtung - Google Patents
Magnetfeld-Erfassungsvorrichtung Download PDFInfo
- Publication number
- DE112010000890T5 DE112010000890T5 DE112010000890T DE112010000890T DE112010000890T5 DE 112010000890 T5 DE112010000890 T5 DE 112010000890T5 DE 112010000890 T DE112010000890 T DE 112010000890T DE 112010000890 T DE112010000890 T DE 112010000890T DE 112010000890 T5 DE112010000890 T5 DE 112010000890T5
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- Germany
- Prior art keywords
- sensor
- sensing element
- supplying
- output
- sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 55
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- 238000001514 detection method Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 14
- 230000035945 sensitivity Effects 0.000 claims description 11
- 230000000087 stabilizing effect Effects 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 9
- 230000005294 ferromagnetic effect Effects 0.000 claims description 8
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 claims description 6
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- 230000004044 response Effects 0.000 description 11
- 230000006641 stabilisation Effects 0.000 description 9
- 238000011105 stabilization Methods 0.000 description 9
- 230000004043 responsiveness Effects 0.000 description 8
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
- G01R33/05—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle in thin-film element
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/392,638 | 2009-02-25 | ||
| US12/392,638 US7977941B2 (en) | 2009-02-25 | 2009-02-25 | Magnetic field sensing device |
| PCT/US2010/023444 WO2010098967A1 (en) | 2009-02-25 | 2010-02-08 | Magnetic field sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112010000890T5 true DE112010000890T5 (de) | 2012-09-06 |
Family
ID=42630392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112010000890T Pending DE112010000890T5 (de) | 2009-02-25 | 2010-02-08 | Magnetfeld-Erfassungsvorrichtung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7977941B2 (enExample) |
| JP (1) | JP2012518788A (enExample) |
| KR (1) | KR101739261B1 (enExample) |
| CN (2) | CN104865539B (enExample) |
| DE (1) | DE112010000890T5 (enExample) |
| TW (1) | TWI487928B (enExample) |
| WO (1) | WO2010098967A1 (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013102165A1 (de) * | 2012-07-18 | 2014-02-06 | Tdk Corporation | Magnetsensorsystem |
| DE102017106322B4 (de) * | 2016-03-23 | 2020-01-30 | Analog Devices Global | Magnetfelddetektor |
| US10739165B2 (en) | 2017-07-05 | 2020-08-11 | Analog Devices Global | Magnetic field sensor |
| US11280639B2 (en) | 2016-03-08 | 2022-03-22 | Analog Devices International Unlimited Company | Multiturn sensor arrangement and readout |
| US11460521B2 (en) | 2019-03-18 | 2022-10-04 | Analog Devices International Unlimited Company | Multiturn sensor arrangement |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2009110119A1 (ja) * | 2008-03-06 | 2011-07-14 | 富士電機ホールディングス株式会社 | 強磁性トンネル接合素子および強磁性トンネル接合素子の駆動方法 |
| US8390283B2 (en) | 2009-09-25 | 2013-03-05 | Everspin Technologies, Inc. | Three axis magnetic field sensor |
| US20110169488A1 (en) * | 2010-01-08 | 2011-07-14 | Everspin Technologies, Inc. | Method and structure for testing and calibrating magnetic field sensing device |
| US8518734B2 (en) * | 2010-03-31 | 2013-08-27 | Everspin Technologies, Inc. | Process integration of a single chip three axis magnetic field sensor |
| US20120068698A1 (en) * | 2010-09-17 | 2012-03-22 | Industrial Technology Research Institute | Structure of tmr and fabrication method of integrated 3-axis magnetic field sensor and sensing circuit |
| US8890266B2 (en) * | 2011-01-31 | 2014-11-18 | Everspin Technologies, Inc. | Fabrication process and layout for magnetic sensor arrays |
| TWI420128B (zh) * | 2011-10-28 | 2013-12-21 | Isentek Inc | 磁感測裝置 |
| US9739808B2 (en) * | 2011-11-29 | 2017-08-22 | Honeywell International Inc. | Devices, methods, and systems for sensing current |
| JP5849654B2 (ja) * | 2011-11-30 | 2016-02-03 | 株式会社リコー | 電流センサ |
| JP5857687B2 (ja) * | 2011-11-30 | 2016-02-10 | 株式会社リコー | 電流検知装置、電流検知素子および電流検知方法 |
| US9411024B2 (en) | 2012-04-20 | 2016-08-09 | Infineon Technologies Ag | Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy |
| US9865650B2 (en) * | 2012-12-20 | 2018-01-09 | Mark B. Johnson | Magnetic tunnel junction based logic circuits |
| US9754997B2 (en) * | 2012-12-20 | 2017-09-05 | Mark B. Johnson | Magnetic tunnel junction based reconfigurable processing system and components |
| US9341684B2 (en) | 2013-03-13 | 2016-05-17 | Plures Technologies, Inc. | Magnetic field sensing apparatus and methods |
| US9134385B2 (en) * | 2013-05-09 | 2015-09-15 | Honeywell International Inc. | Magnetic-field sensing device |
| US9519034B2 (en) * | 2014-05-15 | 2016-12-13 | Everspin Technologies, Inc. | Bipolar chopping for 1/F noise and offset reduction in magnetic field sensors |
| US10012707B2 (en) * | 2015-04-29 | 2018-07-03 | Everspin Technologies, Inc. | Magnetic field sensor with 3-axes self test |
| US10809320B2 (en) | 2015-04-29 | 2020-10-20 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
| EP3104187A1 (en) * | 2015-06-09 | 2016-12-14 | International Iberian Nanotechnology Laboratory | Magnetoresistive sensor |
| ITUB20153317A1 (it) | 2015-09-01 | 2017-03-01 | St Microelectronics Srl | Procedimento di calibrazione per dispositivi sensori di campo magnetico, sistema, apparecchiatura e prodotto informatico corrispondenti |
| CN105574982B (zh) * | 2016-01-12 | 2018-09-25 | 深圳粤宝电子科技有限公司 | 一种线圈磁芯全桥结构的读磁器 |
| US10067201B2 (en) * | 2016-04-14 | 2018-09-04 | Texas Instruments Incorporated | Wiring layout to reduce magnetic field |
| DE102016208314A1 (de) | 2016-05-13 | 2017-11-16 | Robert Bosch Gmbh | Magnetfeldsensor und Verfahren zum Messen eines äußeren Magnetfeldes |
| CN107037380B (zh) * | 2016-11-18 | 2019-03-19 | 清华大学 | 一种宽磁场范围测量方法及装置 |
| CN108469595B (zh) | 2017-02-23 | 2020-08-11 | 爱盛科技股份有限公司 | 磁场感测装置及感测方法 |
| RU2643233C1 (ru) * | 2017-04-04 | 2018-01-31 | Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Производственное объединение "Старт" им. М.В. Проценко" (ФГУП ФНПЦ ПО "Старт" им. М.В. Проценко") | Устройство для автоматического мониторинга магнитных полей |
| US10794968B2 (en) * | 2017-08-24 | 2020-10-06 | Everspin Technologies, Inc. | Magnetic field sensor and method of manufacture |
| US10615887B1 (en) * | 2018-09-24 | 2020-04-07 | Seagate Technology Llc | Mitigation of noise generated by random excitation of asymmetric oscillation modes |
| EP3957958B1 (en) * | 2019-08-05 | 2023-05-10 | Shenzhen Goodix Technology Co., Ltd. | Detection circuit of bridge sensor, chip and detection system |
| US11598828B2 (en) * | 2019-08-26 | 2023-03-07 | Western Digital Technologies, Inc. | Magnetic sensor array with different RA TMR film |
| CN112462125B (zh) * | 2020-11-14 | 2024-09-10 | 武汉启亦电气有限公司 | 一种双气息的钳形电流表 |
| US11815568B2 (en) | 2020-12-28 | 2023-11-14 | Stmicroelectronics, Inc. | System and method for fast magnetometer calibration using gyroscope |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247278A (en) | 1991-11-26 | 1993-09-21 | Honeywell Inc. | Magnetic field sensing device |
| US5351005A (en) * | 1992-12-31 | 1994-09-27 | Honeywell Inc. | Resetting closed-loop magnetoresistive magnetic sensor |
| JPH06275887A (ja) * | 1993-03-19 | 1994-09-30 | Fujitsu Ltd | 磁気抵抗素子 |
| DE69530726T2 (de) | 1994-02-28 | 2004-03-11 | Koninklijke Philips Electronics N.V. | Messgerät für magnetische felder |
| DE69702919T2 (de) * | 1997-12-22 | 2001-01-25 | Tesa Brown & Sharpe Sa | Schaltung für Dimensionsmessgerät mit magnetoresistiven Elektroden |
| US6999285B2 (en) | 2003-10-27 | 2006-02-14 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve transistor with differential detection and method of making |
| WO2005064357A2 (en) * | 2003-12-23 | 2005-07-14 | Koninklijke Philips Electronics N.V. | Flux guides for magnetic field sensors and memories |
| US7120048B2 (en) | 2004-06-21 | 2006-10-10 | Honeywell International Inc. | Nonvolatile memory vertical ring bit and write-read structure |
| JP2006086362A (ja) | 2004-09-16 | 2006-03-30 | Toshiba Corp | 磁気記憶装置 |
| JP2008515043A (ja) * | 2004-09-27 | 2008-05-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 入力装置用の磁気センサ |
| KR20070087628A (ko) * | 2004-12-28 | 2007-08-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 조정 가능한 특성을 지닌 브릿지-유형의 센서 |
| US7444738B2 (en) * | 2005-07-29 | 2008-11-04 | Everspin Technologies, Inc. | Method for tunnel junction sensor with magnetic cladding |
| US7220602B2 (en) | 2005-07-29 | 2007-05-22 | Freescale Semiconductor, Inc. | Magnetic tunnel junction sensor method |
| JP4508058B2 (ja) * | 2005-09-26 | 2010-07-21 | 三菱電機株式会社 | 磁界検出装置およびその製造方法 |
| US7271011B2 (en) * | 2005-10-28 | 2007-09-18 | Freescale Semiconductor, Inc. | Methods of implementing magnetic tunnel junction current sensors |
| US7547480B2 (en) | 2005-10-28 | 2009-06-16 | Everspin Technologies, Inc. | Magnetic tunnel junction pressure sensors and methods |
-
2009
- 2009-02-25 US US12/392,638 patent/US7977941B2/en active Active
-
2010
- 2010-02-08 CN CN201510254372.1A patent/CN104865539B/zh active Active
- 2010-02-08 DE DE112010000890T patent/DE112010000890T5/de active Pending
- 2010-02-08 WO PCT/US2010/023444 patent/WO2010098967A1/en not_active Ceased
- 2010-02-08 KR KR1020117014581A patent/KR101739261B1/ko active Active
- 2010-02-08 JP JP2011551114A patent/JP2012518788A/ja active Pending
- 2010-02-08 CN CN201080005267.XA patent/CN102292648B/zh active Active
- 2010-02-25 TW TW099105483A patent/TWI487928B/zh active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013102165A1 (de) * | 2012-07-18 | 2014-02-06 | Tdk Corporation | Magnetsensorsystem |
| DE102013102165B4 (de) * | 2012-07-18 | 2014-11-20 | Tdk Corporation | Magnetsensorsystem |
| US9175942B2 (en) | 2012-07-18 | 2015-11-03 | Tdk Corporation | Magnetic sensor system |
| US11280639B2 (en) | 2016-03-08 | 2022-03-22 | Analog Devices International Unlimited Company | Multiturn sensor arrangement and readout |
| DE102017106322B4 (de) * | 2016-03-23 | 2020-01-30 | Analog Devices Global | Magnetfelddetektor |
| US11187763B2 (en) | 2016-03-23 | 2021-11-30 | Analog Devices International Unlimited Company | Offset compensation for magnetic field detector |
| US11294003B2 (en) | 2016-03-23 | 2022-04-05 | Analog Devices International Unlimited Company | Magnetic field detector |
| US12025683B2 (en) | 2016-03-23 | 2024-07-02 | Analog Devices International Unlimited Company | Length detector with magnetoresitive elements |
| US10739165B2 (en) | 2017-07-05 | 2020-08-11 | Analog Devices Global | Magnetic field sensor |
| US11460521B2 (en) | 2019-03-18 | 2022-10-04 | Analog Devices International Unlimited Company | Multiturn sensor arrangement |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201038957A (en) | 2010-11-01 |
| WO2010098967A1 (en) | 2010-09-02 |
| CN104865539B (zh) | 2017-12-22 |
| JP2012518788A (ja) | 2012-08-16 |
| CN102292648B (zh) | 2015-06-03 |
| CN102292648A (zh) | 2011-12-21 |
| CN104865539A (zh) | 2015-08-26 |
| KR101739261B1 (ko) | 2017-05-24 |
| TWI487928B (zh) | 2015-06-11 |
| US20100213933A1 (en) | 2010-08-26 |
| KR20110127638A (ko) | 2011-11-25 |
| US7977941B2 (en) | 2011-07-12 |
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