TWI487928B - 磁場感測元件 - Google Patents
磁場感測元件 Download PDFInfo
- Publication number
- TWI487928B TWI487928B TW099105483A TW99105483A TWI487928B TW I487928 B TWI487928 B TW I487928B TW 099105483 A TW099105483 A TW 099105483A TW 99105483 A TW99105483 A TW 99105483A TW I487928 B TWI487928 B TW I487928B
- Authority
- TW
- Taiwan
- Prior art keywords
- current
- sensing element
- sensing
- sensor
- output
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 81
- 230000005641 tunneling Effects 0.000 claims description 43
- 230000005294 ferromagnetic effect Effects 0.000 claims description 17
- 238000005070 sampling Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 230000035945 sensitivity Effects 0.000 claims description 11
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 230000004044 response Effects 0.000 description 18
- 238000005259 measurement Methods 0.000 description 10
- 239000013598 vector Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 HfOx Inorganic materials 0.000 description 1
- 229910017947 MgOx Inorganic materials 0.000 description 1
- 229910005811 NiMnSb Inorganic materials 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
- G01R33/05—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle in thin-film element
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/392,638 US7977941B2 (en) | 2009-02-25 | 2009-02-25 | Magnetic field sensing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201038957A TW201038957A (en) | 2010-11-01 |
| TWI487928B true TWI487928B (zh) | 2015-06-11 |
Family
ID=42630392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099105483A TWI487928B (zh) | 2009-02-25 | 2010-02-25 | 磁場感測元件 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7977941B2 (enExample) |
| JP (1) | JP2012518788A (enExample) |
| KR (1) | KR101739261B1 (enExample) |
| CN (2) | CN102292648B (enExample) |
| DE (1) | DE112010000890T5 (enExample) |
| TW (1) | TWI487928B (enExample) |
| WO (1) | WO2010098967A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10436857B2 (en) | 2017-02-23 | 2019-10-08 | Isentek Inc. | Magnetic field sensing apparatus and sensing method thereof |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009110119A1 (ja) * | 2008-03-06 | 2009-09-11 | 富士電機ホールディングス株式会社 | 強磁性トンネル接合素子および強磁性トンネル接合素子の駆動方法 |
| US8390283B2 (en) | 2009-09-25 | 2013-03-05 | Everspin Technologies, Inc. | Three axis magnetic field sensor |
| US20110169488A1 (en) * | 2010-01-08 | 2011-07-14 | Everspin Technologies, Inc. | Method and structure for testing and calibrating magnetic field sensing device |
| US8518734B2 (en) | 2010-03-31 | 2013-08-27 | Everspin Technologies, Inc. | Process integration of a single chip three axis magnetic field sensor |
| US20120068698A1 (en) * | 2010-09-17 | 2012-03-22 | Industrial Technology Research Institute | Structure of tmr and fabrication method of integrated 3-axis magnetic field sensor and sensing circuit |
| US8890266B2 (en) | 2011-01-31 | 2014-11-18 | Everspin Technologies, Inc. | Fabrication process and layout for magnetic sensor arrays |
| TWI420128B (zh) * | 2011-10-28 | 2013-12-21 | Isentek Inc | 磁感測裝置 |
| WO2013078615A1 (en) * | 2011-11-29 | 2013-06-06 | Honeywell International Inc. | Devices, methods, and systems for sensing current |
| JP5857687B2 (ja) * | 2011-11-30 | 2016-02-10 | 株式会社リコー | 電流検知装置、電流検知素子および電流検知方法 |
| JP5849654B2 (ja) * | 2011-11-30 | 2016-02-03 | 株式会社リコー | 電流センサ |
| US9411024B2 (en) * | 2012-04-20 | 2016-08-09 | Infineon Technologies Ag | Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy |
| JP5590349B2 (ja) * | 2012-07-18 | 2014-09-17 | Ｔｄｋ株式会社 | 磁気センサシステム |
| US9865650B2 (en) * | 2012-12-20 | 2018-01-09 | Mark B. Johnson | Magnetic tunnel junction based logic circuits |
| US9754997B2 (en) * | 2012-12-20 | 2017-09-05 | Mark B. Johnson | Magnetic tunnel junction based reconfigurable processing system and components |
| US9341684B2 (en) | 2013-03-13 | 2016-05-17 | Plures Technologies, Inc. | Magnetic field sensing apparatus and methods |
| US9134385B2 (en) * | 2013-05-09 | 2015-09-15 | Honeywell International Inc. | Magnetic-field sensing device |
| US9519034B2 (en) * | 2014-05-15 | 2016-12-13 | Everspin Technologies, Inc. | Bipolar chopping for 1/F noise and offset reduction in magnetic field sensors |
| US10012707B2 (en) * | 2015-04-29 | 2018-07-03 | Everspin Technologies, Inc. | Magnetic field sensor with 3-axes self test |
| US10809320B2 (en) | 2015-04-29 | 2020-10-20 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
| EP3104187A1 (en) * | 2015-06-09 | 2016-12-14 | International Iberian Nanotechnology Laboratory | Magnetoresistive sensor |
| ITUB20153317A1 (it) * | 2015-09-01 | 2017-03-01 | St Microelectronics Srl | Procedimento di calibrazione per dispositivi sensori di campo magnetico, sistema, apparecchiatura e prodotto informatico corrispondenti |
| CN105574982B (zh) * | 2016-01-12 | 2018-09-25 | 深圳粤宝电子科技有限公司 | 一种线圈磁芯全桥结构的读磁器 |
| US10782153B2 (en) | 2016-03-08 | 2020-09-22 | Analog Devices Global | Multiturn sensor arrangement and readout |
| JP6430565B2 (ja) | 2016-03-23 | 2018-11-28 | アナログ・デヴァイシズ・グローバル | 磁界検出器 |
| US10067201B2 (en) * | 2016-04-14 | 2018-09-04 | Texas Instruments Incorporated | Wiring layout to reduce magnetic field |
| DE102016208314A1 (de) * | 2016-05-13 | 2017-11-16 | Robert Bosch Gmbh | Magnetfeldsensor und Verfahren zum Messen eines äußeren Magnetfeldes |
| CN107037380B (zh) * | 2016-11-18 | 2019-03-19 | 清华大学 | 一种宽磁场范围测量方法及装置 |
| RU2643233C1 (ru) * | 2017-04-04 | 2018-01-31 | Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Производственное объединение "Старт" им. М.В. Проценко" (ФГУП ФНПЦ ПО "Старт" им. М.В. Проценко") | Устройство для автоматического мониторинга магнитных полей |
| US10739165B2 (en) | 2017-07-05 | 2020-08-11 | Analog Devices Global | Magnetic field sensor |
| US10794968B2 (en) * | 2017-08-24 | 2020-10-06 | Everspin Technologies, Inc. | Magnetic field sensor and method of manufacture |
| US10615887B1 (en) * | 2018-09-24 | 2020-04-07 | Seagate Technology Llc | Mitigation of noise generated by random excitation of asymmetric oscillation modes |
| US11460521B2 (en) | 2019-03-18 | 2022-10-04 | Analog Devices International Unlimited Company | Multiturn sensor arrangement |
| EP3957958B1 (en) | 2019-08-05 | 2023-05-10 | Shenzhen Goodix Technology Co., Ltd. | Detection circuit of bridge sensor, chip and detection system |
| US11598828B2 (en) * | 2019-08-26 | 2023-03-07 | Western Digital Technologies, Inc. | Magnetic sensor array with different RA TMR film |
| CN112462125B (zh) * | 2020-11-14 | 2024-09-10 | 武汉启亦电气有限公司 | 一种双气息的钳形电流表 |
| US11815568B2 (en) | 2020-12-28 | 2023-11-14 | Stmicroelectronics, Inc. | System and method for fast magnetometer calibration using gyroscope |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200528739A (en) * | 2003-12-23 | 2005-09-01 | Koninkl Philips Electronics Nv | Flux guides for magnetic field sensors and memories |
| US20060056217A1 (en) * | 2004-09-16 | 2006-03-16 | Ryousuke Takizawa | Magnetic memory device |
| US20070026558A1 (en) * | 2005-07-29 | 2007-02-01 | Chung Young S | Magnetic tunnel junction sensor method |
| CN1940586A (zh) * | 2005-09-26 | 2007-04-04 | 三菱电机株式会社 | 磁场检测装置及其制造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247278A (en) | 1991-11-26 | 1993-09-21 | Honeywell Inc. | Magnetic field sensing device |
| US5351005A (en) * | 1992-12-31 | 1994-09-27 | Honeywell Inc. | Resetting closed-loop magnetoresistive magnetic sensor |
| JPH06275887A (ja) * | 1993-03-19 | 1994-09-30 | Fujitsu Ltd | 磁気抵抗素子 |
| JPH08510060A (ja) | 1994-02-28 | 1996-10-22 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 磁束測定装置 |
| EP0924491B1 (fr) * | 1997-12-22 | 2000-08-23 | Brown & Sharpe Tesa S.A. | Circuit électronique pour dispositif de mesure de dimension à électrodes magnétorésistives |
| US6999285B2 (en) | 2003-10-27 | 2006-02-14 | Hitachi Global Storage Technologies Netherlands B.V. | Spin valve transistor with differential detection and method of making |
| US7120048B2 (en) | 2004-06-21 | 2006-10-10 | Honeywell International Inc. | Nonvolatile memory vertical ring bit and write-read structure |
| US7705586B2 (en) * | 2004-09-27 | 2010-04-27 | Nxp B.V. | Magnetic sensor for input devices |
| WO2006070305A1 (en) * | 2004-12-28 | 2006-07-06 | Koninklijke Philips Electronics N.V. | Bridge type sensor with tunable characteristic |
| US7444738B2 (en) * | 2005-07-29 | 2008-11-04 | Everspin Technologies, Inc. | Method for tunnel junction sensor with magnetic cladding |
| US7271011B2 (en) * | 2005-10-28 | 2007-09-18 | Freescale Semiconductor, Inc. | Methods of implementing magnetic tunnel junction current sensors |
| US7547480B2 (en) | 2005-10-28 | 2009-06-16 | Everspin Technologies, Inc. | Magnetic tunnel junction pressure sensors and methods |
-
2009
- 2009-02-25 US US12/392,638 patent/US7977941B2/en active Active
-
2010
- 2010-02-08 WO PCT/US2010/023444 patent/WO2010098967A1/en not_active Ceased
- 2010-02-08 KR KR1020117014581A patent/KR101739261B1/ko active Active
- 2010-02-08 CN CN201080005267.XA patent/CN102292648B/zh active Active
- 2010-02-08 CN CN201510254372.1A patent/CN104865539B/zh active Active
- 2010-02-08 DE DE112010000890T patent/DE112010000890T5/de active Pending
- 2010-02-08 JP JP2011551114A patent/JP2012518788A/ja active Pending
- 2010-02-25 TW TW099105483A patent/TWI487928B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200528739A (en) * | 2003-12-23 | 2005-09-01 | Koninkl Philips Electronics Nv | Flux guides for magnetic field sensors and memories |
| US20060056217A1 (en) * | 2004-09-16 | 2006-03-16 | Ryousuke Takizawa | Magnetic memory device |
| US20070026558A1 (en) * | 2005-07-29 | 2007-02-01 | Chung Young S | Magnetic tunnel junction sensor method |
| CN1940586A (zh) * | 2005-09-26 | 2007-04-04 | 三菱电机株式会社 | 磁场检测装置及其制造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10436857B2 (en) | 2017-02-23 | 2019-10-08 | Isentek Inc. | Magnetic field sensing apparatus and sensing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201038957A (en) | 2010-11-01 |
| KR101739261B1 (ko) | 2017-05-24 |
| WO2010098967A1 (en) | 2010-09-02 |
| CN102292648B (zh) | 2015-06-03 |
| DE112010000890T5 (de) | 2012-09-06 |
| KR20110127638A (ko) | 2011-11-25 |
| US20100213933A1 (en) | 2010-08-26 |
| JP2012518788A (ja) | 2012-08-16 |
| US7977941B2 (en) | 2011-07-12 |
| CN104865539B (zh) | 2017-12-22 |
| CN102292648A (zh) | 2011-12-21 |
| CN104865539A (zh) | 2015-08-26 |
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