KR101739261B1 - 자기장 감지 디바이스 - Google Patents

자기장 감지 디바이스 Download PDF

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KR101739261B1
KR101739261B1 KR1020117014581A KR20117014581A KR101739261B1 KR 101739261 B1 KR101739261 B1 KR 101739261B1 KR 1020117014581 A KR1020117014581 A KR 1020117014581A KR 20117014581 A KR20117014581 A KR 20117014581A KR 101739261 B1 KR101739261 B1 KR 101739261B1
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current
sensing element
magnetic field
sensing
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Korean (ko)
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KR20110127638A (ko
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필립 쥐. 마더
존 엠. 슬로터
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에버스핀 테크놀러지스, 인크.
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
    • G01R33/05—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle in thin-film element

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
KR1020117014581A 2009-02-25 2010-02-08 자기장 감지 디바이스 Active KR101739261B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/392,638 2009-02-25
US12/392,638 US7977941B2 (en) 2009-02-25 2009-02-25 Magnetic field sensing device
PCT/US2010/023444 WO2010098967A1 (en) 2009-02-25 2010-02-08 Magnetic field sensing device

Publications (2)

Publication Number Publication Date
KR20110127638A KR20110127638A (ko) 2011-11-25
KR101739261B1 true KR101739261B1 (ko) 2017-05-24

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KR1020117014581A Active KR101739261B1 (ko) 2009-02-25 2010-02-08 자기장 감지 디바이스

Country Status (7)

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US (1) US7977941B2 (enExample)
JP (1) JP2012518788A (enExample)
KR (1) KR101739261B1 (enExample)
CN (2) CN102292648B (enExample)
DE (1) DE112010000890T5 (enExample)
TW (1) TWI487928B (enExample)
WO (1) WO2010098967A1 (enExample)

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US8390283B2 (en) 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
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US8518734B2 (en) 2010-03-31 2013-08-27 Everspin Technologies, Inc. Process integration of a single chip three axis magnetic field sensor
US20120068698A1 (en) * 2010-09-17 2012-03-22 Industrial Technology Research Institute Structure of tmr and fabrication method of integrated 3-axis magnetic field sensor and sensing circuit
US8890266B2 (en) 2011-01-31 2014-11-18 Everspin Technologies, Inc. Fabrication process and layout for magnetic sensor arrays
TWI420128B (zh) * 2011-10-28 2013-12-21 Isentek Inc 磁感測裝置
WO2013078615A1 (en) * 2011-11-29 2013-06-06 Honeywell International Inc. Devices, methods, and systems for sensing current
JP5857687B2 (ja) * 2011-11-30 2016-02-10 株式会社リコー 電流検知装置、電流検知素子および電流検知方法
JP5849654B2 (ja) * 2011-11-30 2016-02-03 株式会社リコー 電流センサ
US9411024B2 (en) * 2012-04-20 2016-08-09 Infineon Technologies Ag Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy
JP5590349B2 (ja) * 2012-07-18 2014-09-17 Ｔｄｋ株式会社 磁気センサシステム
US9865650B2 (en) * 2012-12-20 2018-01-09 Mark B. Johnson Magnetic tunnel junction based logic circuits
US9754997B2 (en) * 2012-12-20 2017-09-05 Mark B. Johnson Magnetic tunnel junction based reconfigurable processing system and components
US9341684B2 (en) 2013-03-13 2016-05-17 Plures Technologies, Inc. Magnetic field sensing apparatus and methods
US9134385B2 (en) * 2013-05-09 2015-09-15 Honeywell International Inc. Magnetic-field sensing device
US9519034B2 (en) * 2014-05-15 2016-12-13 Everspin Technologies, Inc. Bipolar chopping for 1/F noise and offset reduction in magnetic field sensors
US10012707B2 (en) * 2015-04-29 2018-07-03 Everspin Technologies, Inc. Magnetic field sensor with 3-axes self test
US10809320B2 (en) 2015-04-29 2020-10-20 Everspin Technologies, Inc. Magnetic field sensor with increased SNR
EP3104187A1 (en) * 2015-06-09 2016-12-14 International Iberian Nanotechnology Laboratory Magnetoresistive sensor
ITUB20153317A1 (it) * 2015-09-01 2017-03-01 St Microelectronics Srl Procedimento di calibrazione per dispositivi sensori di campo magnetico, sistema, apparecchiatura e prodotto informatico corrispondenti
CN105574982B (zh) * 2016-01-12 2018-09-25 深圳粤宝电子科技有限公司 一种线圈磁芯全桥结构的读磁器
US10782153B2 (en) 2016-03-08 2020-09-22 Analog Devices Global Multiturn sensor arrangement and readout
JP6430565B2 (ja) 2016-03-23 2018-11-28 アナログ・デヴァイシズ・グローバル 磁界検出器
US10067201B2 (en) * 2016-04-14 2018-09-04 Texas Instruments Incorporated Wiring layout to reduce magnetic field
DE102016208314A1 (de) * 2016-05-13 2017-11-16 Robert Bosch Gmbh Magnetfeldsensor und Verfahren zum Messen eines äußeren Magnetfeldes
CN107037380B (zh) * 2016-11-18 2019-03-19 清华大学 一种宽磁场范围测量方法及装置
CN108469595B (zh) 2017-02-23 2020-08-11 爱盛科技股份有限公司 磁场感测装置及感测方法
RU2643233C1 (ru) * 2017-04-04 2018-01-31 Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Производственное объединение "Старт" им. М.В. Проценко" (ФГУП ФНПЦ ПО "Старт" им. М.В. Проценко") Устройство для автоматического мониторинга магнитных полей
US10739165B2 (en) 2017-07-05 2020-08-11 Analog Devices Global Magnetic field sensor
US10794968B2 (en) * 2017-08-24 2020-10-06 Everspin Technologies, Inc. Magnetic field sensor and method of manufacture
US10615887B1 (en) * 2018-09-24 2020-04-07 Seagate Technology Llc Mitigation of noise generated by random excitation of asymmetric oscillation modes
US11460521B2 (en) 2019-03-18 2022-10-04 Analog Devices International Unlimited Company Multiturn sensor arrangement
EP3957958B1 (en) 2019-08-05 2023-05-10 Shenzhen Goodix Technology Co., Ltd. Detection circuit of bridge sensor, chip and detection system
US11598828B2 (en) * 2019-08-26 2023-03-07 Western Digital Technologies, Inc. Magnetic sensor array with different RA TMR film
CN112462125B (zh) * 2020-11-14 2024-09-10 武汉启亦电气有限公司 一种双气息的钳形电流表
US11815568B2 (en) 2020-12-28 2023-11-14 Stmicroelectronics, Inc. System and method for fast magnetometer calibration using gyroscope

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US20070099031A1 (en) 2005-10-28 2007-05-03 Chung Young S Magnetic tunnel junction pressure sensors and methods

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US20070099031A1 (en) 2005-10-28 2007-05-03 Chung Young S Magnetic tunnel junction pressure sensors and methods

Also Published As

Publication number Publication date
TW201038957A (en) 2010-11-01
WO2010098967A1 (en) 2010-09-02
CN102292648B (zh) 2015-06-03
DE112010000890T5 (de) 2012-09-06
KR20110127638A (ko) 2011-11-25
US20100213933A1 (en) 2010-08-26
TWI487928B (zh) 2015-06-11
JP2012518788A (ja) 2012-08-16
US7977941B2 (en) 2011-07-12
CN104865539B (zh) 2017-12-22
CN102292648A (zh) 2011-12-21
CN104865539A (zh) 2015-08-26

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