DE112008000396T5 - Endpolierverfahren für Einkristall-Siliziumwafer und Einkristall-Siliziumwafer - Google Patents

Endpolierverfahren für Einkristall-Siliziumwafer und Einkristall-Siliziumwafer Download PDF

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Publication number
DE112008000396T5
DE112008000396T5 DE112008000396T DE112008000396T DE112008000396T5 DE 112008000396 T5 DE112008000396 T5 DE 112008000396T5 DE 112008000396 T DE112008000396 T DE 112008000396T DE 112008000396 T DE112008000396 T DE 112008000396T DE 112008000396 T5 DE112008000396 T5 DE 112008000396T5
Authority
DE
Germany
Prior art keywords
polishing
crystal silicon
single crystal
final
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112008000396T
Other languages
German (de)
English (en)
Inventor
Naoto Iizuka
Hirotaka Jyoetsu-shi Kurimoto
Koichi Chikuma-shi Kosaka
Fumiaki Takasaki-shi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE112008000396T5 publication Critical patent/DE112008000396T5/de
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE112008000396T 2007-02-20 2008-01-29 Endpolierverfahren für Einkristall-Siliziumwafer und Einkristall-Siliziumwafer Ceased DE112008000396T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007038937A JP4696086B2 (ja) 2007-02-20 2007-02-20 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ
JP2007-038937 2007-02-20
PCT/JP2008/000101 WO2008102521A1 (ja) 2007-02-20 2008-01-29 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ

Publications (1)

Publication Number Publication Date
DE112008000396T5 true DE112008000396T5 (de) 2010-01-07

Family

ID=39709802

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112008000396T Ceased DE112008000396T5 (de) 2007-02-20 2008-01-29 Endpolierverfahren für Einkristall-Siliziumwafer und Einkristall-Siliziumwafer

Country Status (6)

Country Link
US (1) US8569148B2 (https=)
JP (1) JP4696086B2 (https=)
KR (1) KR101399343B1 (https=)
DE (1) DE112008000396T5 (https=)
TW (1) TWI414012B (https=)
WO (1) WO2008102521A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010131683A (ja) * 2008-12-02 2010-06-17 Sumco Corp シリコンウェーハの研磨方法
WO2010140671A1 (ja) 2009-06-05 2010-12-09 株式会社Sumco シリコンウェーハの研磨方法及びシリコンウェーハ
DE112010002718B4 (de) 2009-06-26 2019-11-21 Sumco Corp. Verfahren zur reinigung eines siliciumwafers sowie verfahren zur herstellung eines epitaktischen wafers unter verwendung des reinigungsverfahrens
JP5888280B2 (ja) 2013-04-18 2016-03-16 信越半導体株式会社 シリコンウエーハの研磨方法およびエピタキシャルウエーハの製造方法
JP6160579B2 (ja) * 2014-08-05 2017-07-12 信越半導体株式会社 シリコンウェーハの仕上げ研磨方法
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
JP2018085411A (ja) * 2016-11-22 2018-05-31 株式会社ディスコ ウエーハの加工方法
US10636673B2 (en) * 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
JP6879272B2 (ja) 2018-03-22 2021-06-02 信越半導体株式会社 シリコンウェーハの製造方法
KR102104073B1 (ko) * 2018-09-06 2020-04-23 에스케이실트론 주식회사 웨이퍼의 마무리 연마 방법 및 장치
WO2020195149A1 (ja) * 2019-03-27 2020-10-01 株式会社フジミインコーポレーテッド ケイ素－ケイ素結合を有する材料を含む研磨対象物の研磨方法
JP6780800B1 (ja) 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193529A (ja) 2002-10-16 2004-07-08 Shin Etsu Handotai Co Ltd ウエーハの評価方法及び装置
JP2005045102A (ja) 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd ウエーハの研磨方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114526A (ja) * 1988-10-24 1990-04-26 Shin Etsu Handotai Co Ltd シリコンウエーハ及びその研磨方法並びにこのシリコンウエーハを用いた半導体電子装置
JP2001015460A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置の製造方法
DE10058305A1 (de) 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Oberflächenpolitur von Siliciumscheiben
WO2003021651A1 (en) 2001-08-16 2003-03-13 Asahi Kasei Chemicals Corporation Polishing fluid for metallic film and method for producing semiconductor substrate using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193529A (ja) 2002-10-16 2004-07-08 Shin Etsu Handotai Co Ltd ウエーハの評価方法及び装置
JP2005045102A (ja) 2003-07-24 2005-02-17 Shin Etsu Handotai Co Ltd ウエーハの研磨方法

Also Published As

Publication number Publication date
KR20090125058A (ko) 2009-12-03
JP4696086B2 (ja) 2011-06-08
JP2008205147A (ja) 2008-09-04
KR101399343B1 (ko) 2014-05-27
TW200849365A (en) 2008-12-16
US8569148B2 (en) 2013-10-29
TWI414012B (zh) 2013-11-01
US20100090314A1 (en) 2010-04-15
WO2008102521A1 (ja) 2008-08-28

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Effective date: 20140605

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