WO2008102521A1 - シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ - Google Patents

シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ Download PDF

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Publication number
WO2008102521A1
WO2008102521A1 PCT/JP2008/000101 JP2008000101W WO2008102521A1 WO 2008102521 A1 WO2008102521 A1 WO 2008102521A1 JP 2008000101 W JP2008000101 W JP 2008000101W WO 2008102521 A1 WO2008102521 A1 WO 2008102521A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
silicon single
crystal wafer
polishing process
final polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/000101
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Naoto Iizuka
Hirotaka Kurimoto
Koichi Kosaka
Fumiaki Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to DE112008000396T priority Critical patent/DE112008000396T5/de
Priority to KR1020097017021A priority patent/KR101399343B1/ko
Priority to US12/449,017 priority patent/US8569148B2/en
Publication of WO2008102521A1 publication Critical patent/WO2008102521A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/JP2008/000101 2007-02-20 2008-01-29 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ Ceased WO2008102521A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112008000396T DE112008000396T5 (de) 2007-02-20 2008-01-29 Endpolierverfahren für Einkristall-Siliziumwafer und Einkristall-Siliziumwafer
KR1020097017021A KR101399343B1 (ko) 2007-02-20 2008-01-29 실리콘 단결정 웨이퍼의 마무리 연마방법 및 실리콘 단결정 웨이퍼
US12/449,017 US8569148B2 (en) 2007-02-20 2008-01-29 Final polishing method for silicon single crystal wafer and silicon single crystal wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007038937A JP4696086B2 (ja) 2007-02-20 2007-02-20 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ
JP2007-038937 2007-02-20

Publications (1)

Publication Number Publication Date
WO2008102521A1 true WO2008102521A1 (ja) 2008-08-28

Family

ID=39709802

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000101 Ceased WO2008102521A1 (ja) 2007-02-20 2008-01-29 シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ

Country Status (6)

Country Link
US (1) US8569148B2 (https=)
JP (1) JP4696086B2 (https=)
KR (1) KR101399343B1 (https=)
DE (1) DE112008000396T5 (https=)
TW (1) TWI414012B (https=)
WO (1) WO2008102521A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010131683A (ja) * 2008-12-02 2010-06-17 Sumco Corp シリコンウェーハの研磨方法
WO2010140671A1 (ja) 2009-06-05 2010-12-09 株式会社Sumco シリコンウェーハの研磨方法及びシリコンウェーハ
DE112010002718B4 (de) 2009-06-26 2019-11-21 Sumco Corp. Verfahren zur reinigung eines siliciumwafers sowie verfahren zur herstellung eines epitaktischen wafers unter verwendung des reinigungsverfahrens
JP5888280B2 (ja) 2013-04-18 2016-03-16 信越半導体株式会社 シリコンウエーハの研磨方法およびエピタキシャルウエーハの製造方法
JP6160579B2 (ja) * 2014-08-05 2017-07-12 信越半導体株式会社 シリコンウェーハの仕上げ研磨方法
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
JP2018085411A (ja) * 2016-11-22 2018-05-31 株式会社ディスコ ウエーハの加工方法
US10636673B2 (en) * 2017-09-28 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor device structure
JP6879272B2 (ja) 2018-03-22 2021-06-02 信越半導体株式会社 シリコンウェーハの製造方法
KR102104073B1 (ko) * 2018-09-06 2020-04-23 에스케이실트론 주식회사 웨이퍼의 마무리 연마 방법 및 장치
WO2020195149A1 (ja) * 2019-03-27 2020-10-01 株式会社フジミインコーポレーテッド ケイ素－ケイ素結合を有する材料を含む研磨対象物の研磨方法
JP6780800B1 (ja) 2020-04-09 2020-11-04 信越半導体株式会社 ウェーハの研磨方法及び研磨装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114526A (ja) * 1988-10-24 1990-04-26 Shin Etsu Handotai Co Ltd シリコンウエーハ及びその研磨方法並びにこのシリコンウエーハを用いた半導体電子装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015460A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置の製造方法
DE10058305A1 (de) 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Oberflächenpolitur von Siliciumscheiben
WO2003021651A1 (en) 2001-08-16 2003-03-13 Asahi Kasei Chemicals Corporation Polishing fluid for metallic film and method for producing semiconductor substrate using the same
JP2004193529A (ja) 2002-10-16 2004-07-08 Shin Etsu Handotai Co Ltd ウエーハの評価方法及び装置
JP4608856B2 (ja) 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02114526A (ja) * 1988-10-24 1990-04-26 Shin Etsu Handotai Co Ltd シリコンウエーハ及びその研磨方法並びにこのシリコンウエーハを用いた半導体電子装置

Also Published As

Publication number Publication date
KR20090125058A (ko) 2009-12-03
JP4696086B2 (ja) 2011-06-08
DE112008000396T5 (de) 2010-01-07
JP2008205147A (ja) 2008-09-04
KR101399343B1 (ko) 2014-05-27
TW200849365A (en) 2008-12-16
US8569148B2 (en) 2013-10-29
TWI414012B (zh) 2013-11-01
US20100090314A1 (en) 2010-04-15

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