DE1114593B - Verfahren zur Herstellung von Selengleichrichtern - Google Patents
Verfahren zur Herstellung von SelengleichrichternInfo
- Publication number
- DE1114593B DE1114593B DEST13592A DEST013592A DE1114593B DE 1114593 B DE1114593 B DE 1114593B DE ST13592 A DEST13592 A DE ST13592A DE ST013592 A DEST013592 A DE ST013592A DE 1114593 B DE1114593 B DE 1114593B
- Authority
- DE
- Germany
- Prior art keywords
- selenium
- metal
- steaming
- compounds
- metals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/0431—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/042—Preparation of foundation plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH355862D CH355862A (de) | 1958-03-29 | 1957-10-03 | Verfahren zur Herstellung von Selengleichrichterplatten |
FR1184267D FR1184267A (fr) | 1958-03-29 | 1957-10-10 | Redresseur au sélénium |
BE561534D BE561534A (en, 2012) | 1958-03-29 | 1957-10-11 | |
DEST13592A DE1114593B (de) | 1958-03-29 | 1958-03-29 | Verfahren zur Herstellung von Selengleichrichtern |
FR790489A FR75399E (fr) | 1958-03-29 | 1959-03-26 | Redresseur au sélénium |
FR865645A FR79988E (fr) | 1958-03-29 | 1961-06-21 | Redresseur au sélénium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEST13592A DE1114593B (de) | 1958-03-29 | 1958-03-29 | Verfahren zur Herstellung von Selengleichrichtern |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1114593B true DE1114593B (de) | 1961-10-05 |
Family
ID=7456091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEST13592A Pending DE1114593B (de) | 1958-03-29 | 1958-03-29 | Verfahren zur Herstellung von Selengleichrichtern |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE561534A (en, 2012) |
CH (1) | CH355862A (en, 2012) |
DE (1) | DE1114593B (en, 2012) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2463753A (en) * | 1945-10-01 | 1949-03-08 | Hartford Nat Bank & Trust Co | Process of preparing selenium for the purpose of increasing its conductivity |
DE820318C (de) * | 1948-10-02 | 1951-11-08 | Siemens & Halske A G | Selenkoerper, insbesondere fuer Trockengleichrichter, Fotoelemente und lichtempfindliche Widerstandszellen |
-
1957
- 1957-10-03 CH CH355862D patent/CH355862A/de unknown
- 1957-10-11 BE BE561534D patent/BE561534A/xx unknown
-
1958
- 1958-03-29 DE DEST13592A patent/DE1114593B/de active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2463753A (en) * | 1945-10-01 | 1949-03-08 | Hartford Nat Bank & Trust Co | Process of preparing selenium for the purpose of increasing its conductivity |
DE806876C (de) * | 1945-10-01 | 1951-06-21 | Philips Nv | Verfahren zur Bereitung von Selen, dem zur Erhoehung der Leitfaehigkeit geringe Mengen von Stoffen zugesetzt sind |
DE820318C (de) * | 1948-10-02 | 1951-11-08 | Siemens & Halske A G | Selenkoerper, insbesondere fuer Trockengleichrichter, Fotoelemente und lichtempfindliche Widerstandszellen |
Also Published As
Publication number | Publication date |
---|---|
CH355862A (de) | 1961-07-31 |
BE561534A (en, 2012) | 1958-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3150591C2 (en, 2012) | ||
DE2653242A1 (de) | Verfahren und vorrichtung zum ueberziehen eines isoliersubstrats durch reaktive ionenablagerung mit einer oxidschicht aus mindestens einem metall | |
DE2215151A1 (de) | Verfahren zum herstellen von duennen schichten aus tantal | |
DE2330545A1 (de) | Vorrichtung und verfahren zum ablagern eines karbidfilmes | |
DE1583459B1 (de) | Vorrichtung zur gewinnung von metallen durch reduktion und raffination entsprechender fluechtiger chloride | |
DE764927C (de) | Verfahren zur Verdampfung im Vakuum | |
DE2460989A1 (de) | Vorrichtung zum aufdampfen von schichten im vakuum | |
DE1114593B (de) | Verfahren zur Herstellung von Selengleichrichtern | |
DE2305359C3 (de) | Vorrichtung zur reaktiven Aufdampfung dünner Schichten auf Unterlagen | |
DE2000495C3 (de) | Verfahren zur Abscheidung eines Metalles bzw. Metalloxydes auf einem Substrat aus Glas, feuerfestem Oxyd, Keramik oder Halbleitermaterial | |
DE102015104433B3 (de) | Verfahren zum Betreiben einer Kaltkathoden-Elektronenstrahlquelle | |
DE2919191A1 (de) | Verfahren zum aufbringen einer beschichtung aus abriebfestem material auf rohre, insbesondere schreibroehrchen fuer roehrchenschreiber | |
DE667929C (de) | Verfahren zur Herstellung feiner Pulver | |
DE414255C (de) | Verfahren zum Niederschlagen chemischer Verbindungen auf einem gluehenden Koerper | |
DE2504610A1 (de) | Verfahren zur herstellung von metallischem zirkonium | |
WO1986006105A1 (en) | Process for the manufacture of wear resistant binding materials | |
DD146757A3 (de) | Verfahren und vorrichtung zur hochrateherstellung hochreiner verbindungsschichten | |
DE1278194B (de) | Verfahren zum Vakuumaufdampfen von stabilen duennen Siliciummonoxyd-Schichten | |
AT221239B (de) | Verfahren zum Überziehen von Gegenständen mit Metalloxydschichten | |
DE69404361T2 (de) | Verfahren zur Herstellung einer dünnen Schicht mittels reaktiver Kathodenzerstäubung | |
DE971563C (de) | Verfahren zum Herstellen festhaftender UEberzuege aus Wolfram oder Molybdaen oder deren Legierungen durch Aufdampfen | |
DE1639407C (de) | Verfahren zur Herstellung einer Vorratskathode für elektrische Entladungsgefäße | |
DE2615955A1 (de) | Verfahren und vorrichtung zum beschichten von rasierklingen | |
DE656524C (de) | Photoelektrische Zelle mit aeusserem lichtelektrischem Effekt | |
CH227662A (de) | Mit Metallschutzschicht versehener Leichtmetallkolben für Verbrennungskraftmaschinen, sowie Verfahren und Vorrichtung zur Herstellung von Metallschutzschichten an Leichtmetallkolben. |