DE1068816B - - Google Patents

Info

Publication number
DE1068816B
DE1068816B DENDAT1068816D DE1068816DA DE1068816B DE 1068816 B DE1068816 B DE 1068816B DE NDAT1068816 D DENDAT1068816 D DE NDAT1068816D DE 1068816D A DE1068816D A DE 1068816DA DE 1068816 B DE1068816 B DE 1068816B
Authority
DE
Germany
Prior art keywords
transistor
disc
contact
metal
contact members
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DENDAT1068816D
Other languages
German (de)
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE1068816B publication Critical patent/DE1068816B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
DENDAT1068816D 1955-09-12 Pending DE1068816B (US20020128544A1-20020912-P00008.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB26027/55A GB824255A (en) 1955-09-12 1955-09-12 Improvements in or relating to transistors

Publications (1)

Publication Number Publication Date
DE1068816B true DE1068816B (US20020128544A1-20020912-P00008.png) 1959-11-12

Family

ID=10237196

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT1068816D Pending DE1068816B (US20020128544A1-20020912-P00008.png) 1955-09-12

Country Status (6)

Country Link
US (1) US2876401A (US20020128544A1-20020912-P00008.png)
BE (1) BE550947A (US20020128544A1-20020912-P00008.png)
DE (1) DE1068816B (US20020128544A1-20020912-P00008.png)
FR (1) FR1156702A (US20020128544A1-20020912-P00008.png)
GB (1) GB824255A (US20020128544A1-20020912-P00008.png)
NL (2) NL210518A (US20020128544A1-20020912-P00008.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1271839B (de) * 1963-06-15 1968-07-04 Siemens Ag Gehaeuse fuer ein Halbleiter-Bauelement in Scheibenzellenbauweise
DE1282793B (de) * 1963-05-27 1968-11-14 Siemens Ag Transistoranordnung mit Gehaeuse
DE19856332A1 (de) * 1998-12-07 2000-06-15 Bosch Gmbh Robert Gehäuse für eletronisches Bauelement

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3142791A (en) * 1955-12-07 1964-07-28 Motorola Inc Transistor and housing assembly
GB831295A (en) * 1957-08-08 1960-03-30 Pye Ltd Improvements in or relating to semiconductor devices
US3204327A (en) * 1957-10-28 1965-09-07 Motorola Inc Method for making semiconductor devices employing a hollow, slotted cylindrical jig and vertical mounting posts
DE1098618B (de) * 1958-07-25 1961-02-02 Telefunken Gmbh Gehaeuse fuer Halbleiteranordnungen kleinster Abmessungen
BE584431A (US20020128544A1-20020912-P00008.png) * 1959-02-09
NL121714C (US20020128544A1-20020912-P00008.png) * 1959-12-14
NL258551A (US20020128544A1-20020912-P00008.png) * 1959-12-16
GB1001269A (US20020128544A1-20020912-P00008.png) * 1960-09-30 1900-01-01
DE1246888C2 (de) * 1960-11-24 1975-10-23 Semikron, Gesellschaft für Gleichrichterbau und Elektronik m.b.H., 8500 Nürnberg Verfahren zum herstellen von gleichrichteranordnungen in brueckenschaltung fuer kleine stromstaerken
NL270369A (US20020128544A1-20020912-P00008.png) * 1961-01-16
US3381080A (en) * 1962-07-02 1968-04-30 Westinghouse Electric Corp Hermetically sealed semiconductor device
US3334279A (en) * 1962-07-30 1967-08-01 Texas Instruments Inc Diode contact arrangement
NL302170A (US20020128544A1-20020912-P00008.png) * 1963-06-15
US3355635A (en) * 1964-05-28 1967-11-28 Rca Corp Semiconductor device assemblage having two convex tabs
US3325704A (en) * 1964-07-31 1967-06-13 Texas Instruments Inc High frequency coaxial transistor package
US3437887A (en) * 1966-06-03 1969-04-08 Westinghouse Electric Corp Flat package encapsulation of electrical devices
MA36816B1 (fr) 2014-03-11 2016-05-31 Univ Hassan 1Er Settat Traitement ecologique des eaux turbides par deux biofloculents extraitraits du cladode de cactus opuntia ficus indica
ES2958624T3 (es) 2016-04-25 2024-02-12 Bae Systems Plc Procesamiento de datos

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE814486C (de) * 1948-08-14 1951-09-24 Western Electric Co Halbleiterverstaerker
GB728304A (en) * 1951-09-15 1955-04-20 Gen Electric Improvements in and relating to asymmetrically conductive apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL182212B (nl) * 1952-10-22 Nemag Nv Grijper.
US2751528A (en) * 1954-12-01 1956-06-19 Gen Electric Rectifier cell mounting
BE543951A (US20020128544A1-20020912-P00008.png) * 1954-12-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE814486C (de) * 1948-08-14 1951-09-24 Western Electric Co Halbleiterverstaerker
GB728304A (en) * 1951-09-15 1955-04-20 Gen Electric Improvements in and relating to asymmetrically conductive apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282793B (de) * 1963-05-27 1968-11-14 Siemens Ag Transistoranordnung mit Gehaeuse
DE1283397B (de) * 1963-05-27 1968-11-21 Siemens Ag Transistoranordnung
DE1271839B (de) * 1963-06-15 1968-07-04 Siemens Ag Gehaeuse fuer ein Halbleiter-Bauelement in Scheibenzellenbauweise
DE19856332A1 (de) * 1998-12-07 2000-06-15 Bosch Gmbh Robert Gehäuse für eletronisches Bauelement

Also Published As

Publication number Publication date
US2876401A (en) 1959-03-03
NL101253C (US20020128544A1-20020912-P00008.png)
GB824255A (en) 1959-11-25
NL210518A (US20020128544A1-20020912-P00008.png)
FR1156702A (fr) 1958-05-20
BE550947A (US20020128544A1-20020912-P00008.png)

Similar Documents

Publication Publication Date Title
DE1068816B (US20020128544A1-20020912-P00008.png)
DE2556749A1 (de) Leistungshalbleiterbauelement in scheibenzellenbauweise
DE2847853C2 (de) Halbleiteranordnung
DE1131323B (de) Halbleiteranordnung, insbesondere Transistor
DE1241536B (de) In ein Gehaeuse eingeschlossene Halbleiteranordnung
DE2012440C3 (de) Halbleiteranordnung für gasdicht abgeschlossene scheibenförmige Halbleiterelemente
DE1589857A1 (de) Steuerbarer Halbleitergleichrichter
DE1012376B (de) Verfahren zur hermetischen Abdichtung eines elektrischen Gleichrichters
DE1052572B (de) Elektrodensystem, das einen halbleitenden Einkristall mit wenigstens zwei Teilen verschiedener Leitungsart enthaelt, z. B. Kristalldiode oder Transistor
DE1054585B (de) Halbleiterbauelement, z. B. Diode oder Transistor
DE6912949U (de) Halbleitergleichrichter.
DE1083936B (de) Elektrische Halbleitervorrichtung fuer groessere Leistungen und Verfahren zur Herstellung einer solchen Vorrichtung
DE2711711C3 (de) Halbleiteranordnung mit einem scheibenförmigen, zwischen Kühlkörpern eingespanntem Halbleiterbauelement
DE1514839C3 (de) Verfahren zur Kontaktierung von Halbleitersystemen
DE2821268C2 (de) Halbleiterbauelement mit Druckkontakt
DE1639402B2 (de) Steuerbares halbleiterbauelement
AT232131B (de) In ein Gehäuse eingeschlossene Halbleiteranordnung
DE2334210C2 (de) Kühlkörper für Transistoren hoher Leistung
DE2541971A1 (de) Halbleiterbauelement
DE1098618B (de) Gehaeuse fuer Halbleiteranordnungen kleinster Abmessungen
AT243320B (de) Halbleiterbauelement mit mindestens drei Elektroden und einem zum Teil aus Metall bestehenden Gehäuse
AT212379B (de) Verfahren zur Herstellen eines Halbleiterbauelementes
DE1439483C3 (de) Verfahren zum Einbau eines Transistors in ein metallisches Gehäuse und Transistoreinbau hergestellt nach diesem Verfahren
DE1764668C2 (de) Gehäuseteil für Halbleiterbauelemente
DE1067111B (US20020128544A1-20020912-P00008.png)