DE1052573B - Verfahren zur Herstellung eines halbleitenden Elektrodensystems, insbesondere eines Transistors - Google Patents
Verfahren zur Herstellung eines halbleitenden Elektrodensystems, insbesondere eines TransistorsInfo
- Publication number
- DE1052573B DE1052573B DEN13359A DEN0013359A DE1052573B DE 1052573 B DE1052573 B DE 1052573B DE N13359 A DEN13359 A DE N13359A DE N0013359 A DEN0013359 A DE N0013359A DE 1052573 B DE1052573 B DE 1052573B
- Authority
- DE
- Germany
- Prior art keywords
- acb
- transistor
- environment
- etching process
- amplification factor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims description 19
- 230000003321 amplification Effects 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- 241000220317 Rosa Species 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 238000005086 pumping Methods 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000002730 additional effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 hydrogen halogens Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- NVKTUNLPFJHLCG-UHFFFAOYSA-N strontium chromate Chemical compound [Sr+2].[O-][Cr]([O-])(=O)=O NVKTUNLPFJHLCG-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL350722X | 1956-02-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1052573B true DE1052573B (de) | 1959-03-12 |
Family
ID=19785028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN13359A Pending DE1052573B (de) | 1956-02-29 | 1957-02-26 | Verfahren zur Herstellung eines halbleitenden Elektrodensystems, insbesondere eines Transistors |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US2887629A (pm) |
| BE (1) | BE555371A (pm) |
| CH (1) | CH350722A (pm) |
| DE (1) | DE1052573B (pm) |
| FR (1) | FR1167318A (pm) |
| GB (1) | GB831816A (pm) |
| NL (1) | NL95308C (pm) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1260445B (de) * | 1965-03-08 | 1968-02-08 | Siemens Ag | Verfahren zum Eindiffundieren von gasfoermigem Dotierungsmaterial in einen Halbleiterkristall |
| DE1489240B1 (de) * | 1963-04-02 | 1971-11-11 | Rca Corp | Verfahren zum Herstellen von Halbleiterbauelementen |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE566430A (pm) * | 1957-04-05 | |||
| DE1764096A1 (de) * | 1967-04-04 | 1971-05-27 | Marconi Co Ltd | Oberflaechen-Feldeffekt-Transistor |
| US3556880A (en) * | 1968-04-11 | 1971-01-19 | Rca Corp | Method of treating semiconductor devices to improve lifetime |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2812480A (en) * | 1954-06-23 | 1957-11-05 | Rca Corp | Method of treating semi-conductor devices and devices produced thereby |
-
1956
- 1956-02-29 NL NL205007A patent/NL95308C/xx active
-
1957
- 1957-02-13 US US639951A patent/US2887629A/en not_active Expired - Lifetime
- 1957-02-26 CH CH350722D patent/CH350722A/de unknown
- 1957-02-26 GB GB6435/57A patent/GB831816A/en not_active Expired
- 1957-02-26 DE DEN13359A patent/DE1052573B/de active Pending
- 1957-02-27 BE BE555371A patent/BE555371A/xx unknown
- 1957-02-28 FR FR1167318D patent/FR1167318A/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1489240B1 (de) * | 1963-04-02 | 1971-11-11 | Rca Corp | Verfahren zum Herstellen von Halbleiterbauelementen |
| DE1260445B (de) * | 1965-03-08 | 1968-02-08 | Siemens Ag | Verfahren zum Eindiffundieren von gasfoermigem Dotierungsmaterial in einen Halbleiterkristall |
Also Published As
| Publication number | Publication date |
|---|---|
| CH350722A (de) | 1960-12-15 |
| NL205007A (pm) | 1959-12-15 |
| FR1167318A (fr) | 1958-11-24 |
| BE555371A (pm) | 1957-08-27 |
| NL95308C (pm) | 1960-09-15 |
| GB831816A (en) | 1960-03-30 |
| US2887629A (en) | 1959-05-19 |
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