DE1033335B - Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen - Google Patents

Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen

Info

Publication number
DE1033335B
DE1033335B DES53828A DES0053828A DE1033335B DE 1033335 B DE1033335 B DE 1033335B DE S53828 A DES53828 A DE S53828A DE S0053828 A DES0053828 A DE S0053828A DE 1033335 B DE1033335 B DE 1033335B
Authority
DE
Germany
Prior art keywords
vapor
volatile component
component
temperature
vapor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES53828A
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Karl-Georg Guenther
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL224894D priority Critical patent/NL224894A/xx
Priority to NL103088D priority patent/NL103088C/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES53828A priority patent/DE1033335B/de
Priority to FR1194877D priority patent/FR1194877A/fr
Priority to GB17370/58A priority patent/GB852598A/en
Priority to US739577A priority patent/US2938816A/en
Publication of DE1033335B publication Critical patent/DE1033335B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Battery Electrode And Active Subsutance (AREA)
DES53828A 1957-06-08 1957-06-08 Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen Pending DE1033335B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL224894D NL224894A (hu) 1957-06-08
NL103088D NL103088C (hu) 1957-06-08
DES53828A DE1033335B (de) 1957-06-08 1957-06-08 Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen
FR1194877D FR1194877A (fr) 1957-06-08 1958-04-18 Procédé de fabrication de couches minces semi-conductrices réalisées en composés semi-conducteurs
GB17370/58A GB852598A (en) 1957-06-08 1958-05-30 Improvements in or relating to the production of semi-conducting layers from semi-conducting compounds
US739577A US2938816A (en) 1957-06-08 1958-06-03 Vaporization method of producing thin layers of semiconducting compounds

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES53828A DE1033335B (de) 1957-06-08 1957-06-08 Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen

Publications (1)

Publication Number Publication Date
DE1033335B true DE1033335B (de) 1958-07-03

Family

ID=7489466

Family Applications (1)

Application Number Title Priority Date Filing Date
DES53828A Pending DE1033335B (de) 1957-06-08 1957-06-08 Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen

Country Status (5)

Country Link
US (1) US2938816A (hu)
DE (1) DE1033335B (hu)
FR (1) FR1194877A (hu)
GB (1) GB852598A (hu)
NL (2) NL224894A (hu)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT381122B (de) * 1974-11-29 1986-08-25 Lohja Ab Oy Verfahren zum zuechten von verbindungs -duennschichten

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082124A (en) * 1959-08-03 1963-03-19 Beckman Instruments Inc Method of making thin layer semiconductor devices
NL258863A (hu) * 1959-12-11
US3245674A (en) * 1960-04-25 1966-04-12 Nat Res Corp Crucible coated with reaction product of aluminum and boron nitride coating
DE1211593B (de) * 1960-04-27 1966-03-03 Wacker Chemie Gmbh Verfahren zur tiegelfreien Herstellung hochreiner, elektrisch halbleitender, kristalliner Verbindungen
NL269855A (hu) * 1960-10-04
US3101280A (en) * 1961-04-05 1963-08-20 Ibm Method of preparing indium antimonide films
US3152006A (en) * 1961-06-29 1964-10-06 High Temperature Materials Inc Boron nitride coating and a process of producing the same
US3211128A (en) * 1962-05-31 1965-10-12 Roy F Potter Vacuum evaporator apparatus
NL293415A (hu) * 1962-05-31
US3301637A (en) * 1962-12-27 1967-01-31 Ibm Method for the synthesis of gallium phosphide
US3429295A (en) * 1963-09-17 1969-02-25 Nuclear Materials & Equipment Apparatus for producing vapor coated particles
US3388002A (en) * 1964-08-06 1968-06-11 Bell Telephone Labor Inc Method of forming a piezoelectric ultrasonic transducer
US3303067A (en) * 1963-12-26 1967-02-07 Ibm Method of fabricating thin film transistor devices
US3341364A (en) * 1964-07-27 1967-09-12 David A Collins Preparation of thin film indium antimonide from bulk indium antimonide
US3958931A (en) * 1965-03-18 1976-05-25 Ciba-Geigy Ag Wool dyeing with epihalohydrin or chloroacetamide quarternized polyglycolamine assisted dye solution
US3433682A (en) * 1965-07-06 1969-03-18 American Standard Inc Silicon coated graphite
US3469978A (en) * 1965-11-30 1969-09-30 Xerox Corp Photosensitive element
US3531335A (en) * 1966-05-09 1970-09-29 Kewanee Oil Co Method of preparing films of controlled resistivity
FR95985E (fr) * 1966-05-16 1972-05-19 Rank Xerox Ltd Semi-conducteurs vitreux et leur procédé de fabrication sous forme de pellicules minces.
US3520716A (en) * 1966-06-07 1970-07-14 Tokyo Shibaura Electric Co Method of vapor depositing multicomponent film
US3480484A (en) * 1966-06-28 1969-11-25 Loral Corp Method for preparing high mobility indium antimonide thin films
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
US3492509A (en) * 1967-07-24 1970-01-27 Bell Telephone Labor Inc Piezoelectric ultrasonic transducers
US3619283A (en) * 1968-09-27 1971-11-09 Ibm Method for epitaxially growing thin films
US3603285A (en) * 1968-11-05 1971-09-07 Massachusetts Inst Technology Vapor deposition apparatus
US3632439A (en) * 1969-04-25 1972-01-04 Westinghouse Electric Corp Method of forming thin insulating films particularly for piezoelectric transducer
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
DE2317797B2 (de) * 1973-04-09 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Galliumphosphid
DE2358859C3 (de) * 1973-11-26 1981-08-06 Robert Bosch Gmbh, 7000 Stuttgart Aufzeichungsträger zum optischen Aufzeichnen von Informationen mittels sequentieller Signale
US4094269A (en) * 1974-06-14 1978-06-13 Zlafop Pri Ban Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances
US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
CA1055819A (en) * 1975-06-20 1979-06-05 Roelof P. Bult Stabilization of aluminum arsenide
JPS5331106A (en) * 1976-09-03 1978-03-24 Hitachi Ltd Information recording member
JPS5399762A (en) * 1977-02-12 1978-08-31 Futaba Denshi Kogyo Kk Device for producing compound semiconductor film
US4177298A (en) * 1977-03-22 1979-12-04 Hitachi, Ltd. Method for producing an InSb thin film element
CH626407A5 (hu) * 1977-07-08 1981-11-13 Balzers Hochvakuum
US4513031A (en) * 1983-09-09 1985-04-23 Xerox Corporation Process for forming alloy layer
US4523051A (en) * 1983-09-27 1985-06-11 The Boeing Company Thin films of mixed metal compounds
CN102452646B (zh) 2010-10-26 2013-10-09 清华大学 亲水性碳纳米管膜的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT381122B (de) * 1974-11-29 1986-08-25 Lohja Ab Oy Verfahren zum zuechten von verbindungs -duennschichten

Also Published As

Publication number Publication date
US2938816A (en) 1960-05-31
NL103088C (hu)
FR1194877A (fr) 1959-11-13
GB852598A (en) 1960-10-26
NL224894A (hu)

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