FR1194877A - Procédé de fabrication de couches minces semi-conductrices réalisées en composés semi-conducteurs - Google Patents

Procédé de fabrication de couches minces semi-conductrices réalisées en composés semi-conducteurs

Info

Publication number
FR1194877A
FR1194877A FR1194877DA FR1194877A FR 1194877 A FR1194877 A FR 1194877A FR 1194877D A FR1194877D A FR 1194877DA FR 1194877 A FR1194877 A FR 1194877A
Authority
FR
France
Prior art keywords
films made
semiconductor
manufacturing thin
compounds
semiconductor films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1194877A publication Critical patent/FR1194877A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Battery Electrode And Active Subsutance (AREA)
FR1194877D 1957-06-08 1958-04-18 Procédé de fabrication de couches minces semi-conductrices réalisées en composés semi-conducteurs Expired FR1194877A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES53828A DE1033335B (de) 1957-06-08 1957-06-08 Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen

Publications (1)

Publication Number Publication Date
FR1194877A true FR1194877A (fr) 1959-11-13

Family

ID=7489466

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1194877D Expired FR1194877A (fr) 1957-06-08 1958-04-18 Procédé de fabrication de couches minces semi-conductrices réalisées en composés semi-conducteurs

Country Status (5)

Country Link
US (1) US2938816A (fr)
DE (1) DE1033335B (fr)
FR (1) FR1194877A (fr)
GB (1) GB852598A (fr)
NL (2) NL103088C (fr)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082124A (en) * 1959-08-03 1963-03-19 Beckman Instruments Inc Method of making thin layer semiconductor devices
NL258863A (fr) * 1959-12-11
US3245674A (en) * 1960-04-25 1966-04-12 Nat Res Corp Crucible coated with reaction product of aluminum and boron nitride coating
DE1211593B (de) * 1960-04-27 1966-03-03 Wacker Chemie Gmbh Verfahren zur tiegelfreien Herstellung hochreiner, elektrisch halbleitender, kristalliner Verbindungen
US3127226A (en) * 1960-10-04 1964-03-31 Pin-hole evaporation camera
US3101280A (en) * 1961-04-05 1963-08-20 Ibm Method of preparing indium antimonide films
US3152006A (en) * 1961-06-29 1964-10-06 High Temperature Materials Inc Boron nitride coating and a process of producing the same
BE632506A (fr) * 1962-05-31
US3211128A (en) * 1962-05-31 1965-10-12 Roy F Potter Vacuum evaporator apparatus
US3301637A (en) * 1962-12-27 1967-01-31 Ibm Method for the synthesis of gallium phosphide
US3429295A (en) * 1963-09-17 1969-02-25 Nuclear Materials & Equipment Apparatus for producing vapor coated particles
US3388002A (en) * 1964-08-06 1968-06-11 Bell Telephone Labor Inc Method of forming a piezoelectric ultrasonic transducer
US3303067A (en) * 1963-12-26 1967-02-07 Ibm Method of fabricating thin film transistor devices
US3341364A (en) * 1964-07-27 1967-09-12 David A Collins Preparation of thin film indium antimonide from bulk indium antimonide
US3958931A (en) * 1965-03-18 1976-05-25 Ciba-Geigy Ag Wool dyeing with epihalohydrin or chloroacetamide quarternized polyglycolamine assisted dye solution
US3433682A (en) * 1965-07-06 1969-03-18 American Standard Inc Silicon coated graphite
US3469978A (en) * 1965-11-30 1969-09-30 Xerox Corp Photosensitive element
US3531335A (en) * 1966-05-09 1970-09-29 Kewanee Oil Co Method of preparing films of controlled resistivity
FR95985E (fr) * 1966-05-16 1972-05-19 Rank Xerox Ltd Semi-conducteurs vitreux et leur procédé de fabrication sous forme de pellicules minces.
US3520716A (en) * 1966-06-07 1970-07-14 Tokyo Shibaura Electric Co Method of vapor depositing multicomponent film
US3480484A (en) * 1966-06-28 1969-11-25 Loral Corp Method for preparing high mobility indium antimonide thin films
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
US3492509A (en) * 1967-07-24 1970-01-27 Bell Telephone Labor Inc Piezoelectric ultrasonic transducers
US3619283A (en) * 1968-09-27 1971-11-09 Ibm Method for epitaxially growing thin films
US3603285A (en) * 1968-11-05 1971-09-07 Massachusetts Inst Technology Vapor deposition apparatus
US3632439A (en) * 1969-04-25 1972-01-04 Westinghouse Electric Corp Method of forming thin insulating films particularly for piezoelectric transducer
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
DE2317797B2 (de) * 1973-04-09 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Galliumphosphid
DE2358859C3 (de) * 1973-11-26 1981-08-06 Robert Bosch Gmbh, 7000 Stuttgart Aufzeichungsträger zum optischen Aufzeichnen von Informationen mittels sequentieller Signale
US4094269A (en) * 1974-06-14 1978-06-13 Zlafop Pri Ban Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
CA1055819A (fr) * 1975-06-20 1979-06-05 Roelof P. Bult Stabilisation de l'arsenure d'aluminium
JPS5331106A (en) * 1976-09-03 1978-03-24 Hitachi Ltd Information recording member
JPS5399762A (en) * 1977-02-12 1978-08-31 Futaba Denshi Kogyo Kk Device for producing compound semiconductor film
US4177298A (en) * 1977-03-22 1979-12-04 Hitachi, Ltd. Method for producing an InSb thin film element
CH626407A5 (fr) * 1977-07-08 1981-11-13 Balzers Hochvakuum
US4513031A (en) * 1983-09-09 1985-04-23 Xerox Corporation Process for forming alloy layer
US4523051A (en) * 1983-09-27 1985-06-11 The Boeing Company Thin films of mixed metal compounds
CN102452646B (zh) 2010-10-26 2013-10-09 清华大学 亲水性碳纳米管膜的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds

Also Published As

Publication number Publication date
NL224894A (fr)
NL103088C (fr)
DE1033335B (de) 1958-07-03
GB852598A (en) 1960-10-26
US2938816A (en) 1960-05-31

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