DE10333329A1 - Leistungshalbleitermodul mit biegesteifer Grundplatte - Google Patents

Leistungshalbleitermodul mit biegesteifer Grundplatte Download PDF

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Publication number
DE10333329A1
DE10333329A1 DE10333329A DE10333329A DE10333329A1 DE 10333329 A1 DE10333329 A1 DE 10333329A1 DE 10333329 A DE10333329 A DE 10333329A DE 10333329 A DE10333329 A DE 10333329A DE 10333329 A1 DE10333329 A1 DE 10333329A1
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Germany
Prior art keywords
base plate
power semiconductor
semiconductor module
rigid base
housing
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Granted
Application number
DE10333329A
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English (en)
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DE10333329B4 (de
Inventor
Yvonne Manz
Juergen Steger
Harald Jaeger
Herbert Rueger
Juergen Matthes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron Elektronik GmbH and Co KG
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Semikron GmbH and Co KG
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Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Priority to DE10333329A priority Critical patent/DE10333329B4/de
Priority to EP04014433A priority patent/EP1501127B1/de
Priority to AT04014433T priority patent/ATE434833T1/de
Priority to DE502004009640T priority patent/DE502004009640D1/de
Priority to JP2004204701A priority patent/JP4264392B2/ja
Priority to KR1020040056936A priority patent/KR100990527B1/ko
Priority to US10/897,719 priority patent/US7030491B2/en
Publication of DE10333329A1 publication Critical patent/DE10333329A1/de
Application granted granted Critical
Publication of DE10333329B4 publication Critical patent/DE10333329B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

Die Erfindung beschreibt ein Leistungshalbleitermodul (10) mit einer metallischen Grundplatte (20) zur Montage auf einem Kühlkörper (80), bestehend aus einem rahmenartigen Gehäuse (30), einem Deckel (70), nach außen führenden Anschlusselementen für Last- (40, 42, 44) und Hilfskontakte (76) und mit mindestens einem innerhalb des Gehäuses (30) angeordneten elektrisch isolierenden Substrats (50). Das Substrat besteht aus einem Isolierkörper (52) und einer Mehrzahl von gegeneinander elektrisch isolierten metallischen Verbindungsbahnen (54), darauf befindlichen und mit diesen Verbindungsbahnen schaltungsgerecht verbundenen Leistungshalbleiterbauelementen (56). Die Grundplatte (20) weist eine Versteifungsstruktur (24) auf, die in Längsrichtung der Grundplatte (20) verläuft, wobei diese Versteifungsstruktur (24) aus dem Grundplattenmaterial selbst durch Verformung gebildet ist und aus der durch die Grundplatte gegebenen Ebene herausragt.
DE10333329A 2003-07-23 2003-07-23 Leistungshalbleitermodul mit biegesteifer Grundplatte Expired - Lifetime DE10333329B4 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE10333329A DE10333329B4 (de) 2003-07-23 2003-07-23 Leistungshalbleitermodul mit biegesteifer Grundplatte
AT04014433T ATE434833T1 (de) 2003-07-23 2004-06-19 Verfahren zur herstellung eines leistungshalbleitermoduls mit biegesteifer grundplatte
DE502004009640T DE502004009640D1 (de) 2003-07-23 2004-06-19 Verfahren zur Herstellung eines Leistungshalbleitermoduls mit biegesteifer Grundplatte
EP04014433A EP1501127B1 (de) 2003-07-23 2004-06-19 Verfahren zur Herstellung eines Leistungshalbleitermoduls mit biegesteifer Grundplatte
JP2004204701A JP4264392B2 (ja) 2003-07-23 2004-07-12 曲げ強化ベースプレートを備えたパワー半導体モジュール
KR1020040056936A KR100990527B1 (ko) 2003-07-23 2004-07-21 휨저항성 기부판을 갖는 전력 반도체 모듈
US10/897,719 US7030491B2 (en) 2003-07-23 2004-07-23 Power semiconductor module with deflection-resistant base plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10333329A DE10333329B4 (de) 2003-07-23 2003-07-23 Leistungshalbleitermodul mit biegesteifer Grundplatte

Publications (2)

Publication Number Publication Date
DE10333329A1 true DE10333329A1 (de) 2005-03-10
DE10333329B4 DE10333329B4 (de) 2011-07-21

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE10333329A Expired - Lifetime DE10333329B4 (de) 2003-07-23 2003-07-23 Leistungshalbleitermodul mit biegesteifer Grundplatte
DE502004009640T Active DE502004009640D1 (de) 2003-07-23 2004-06-19 Verfahren zur Herstellung eines Leistungshalbleitermoduls mit biegesteifer Grundplatte

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DE502004009640T Active DE502004009640D1 (de) 2003-07-23 2004-06-19 Verfahren zur Herstellung eines Leistungshalbleitermoduls mit biegesteifer Grundplatte

Country Status (6)

Country Link
US (1) US7030491B2 (de)
EP (1) EP1501127B1 (de)
JP (1) JP4264392B2 (de)
KR (1) KR100990527B1 (de)
AT (1) ATE434833T1 (de)
DE (2) DE10333329B4 (de)

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DE102005037522A1 (de) * 2005-08-09 2007-02-15 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit wannenförmigem Grundkörper
EP1755163A1 (de) 2005-08-19 2007-02-21 SEMIKRON Elektronik GmbH & Co. KG Leistungshalbleitermodul mit Leitungssegment
DE102008054932A1 (de) * 2008-12-18 2010-07-01 Infineon Technologies Ag Leistungshalbleitermodul mit versteifter Bodenplatte
DE102009035819A1 (de) 2009-08-01 2011-02-03 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit stromsymmetrischem Lastanschlusselement
US8472949B2 (en) 2005-02-17 2013-06-25 Infineon Technologies Ag Semiconductor assembly
DE102005063532B3 (de) 2005-02-17 2022-03-10 Infineon Technologies Ag Leistungshalbleiterbaugruppe

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JP2006253183A (ja) * 2005-03-08 2006-09-21 Hitachi Ltd 半導体パワーモジュール
DE102006058692A1 (de) * 2006-12-13 2008-06-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Kontaktfedern
DE102007010883A1 (de) * 2007-03-06 2008-09-18 Infineon Technologies Ag Leistungshalbleiteranordnung und Verfahren zu dessen Herstellung
DE102007036566A1 (de) * 2007-08-03 2009-02-19 Siemens Ag Federkontaktierung von elektrischen Kontaktflächen eines elektronischen Bauteils
JP5512377B2 (ja) * 2010-04-28 2014-06-04 本田技研工業株式会社 回路基板
EP3573096B1 (de) 2011-06-27 2022-03-16 Rohm Co., Ltd. Halbleitermodul
US9929066B1 (en) 2016-12-13 2018-03-27 Ixys Corporation Power semiconductor device module baseplate having peripheral heels
WO2020245890A1 (ja) * 2019-06-03 2020-12-10 三菱電機株式会社 パワーモジュール及び電力変換装置

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US8472949B2 (en) 2005-02-17 2013-06-25 Infineon Technologies Ag Semiconductor assembly
DE102005063532B3 (de) 2005-02-17 2022-03-10 Infineon Technologies Ag Leistungshalbleiterbaugruppe
DE102005037522A1 (de) * 2005-08-09 2007-02-15 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit wannenförmigem Grundkörper
EP1753025A3 (de) * 2005-08-09 2008-07-23 Semikron Elektronik GmbH & Co. KG Patentabteilung Leistungshalbleitermodul mit wannenförmigem Grundkörper
EP1755163A1 (de) 2005-08-19 2007-02-21 SEMIKRON Elektronik GmbH & Co. KG Leistungshalbleitermodul mit Leitungssegment
DE102005039278A1 (de) * 2005-08-19 2007-02-22 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Leitungselement
DE102008054932A1 (de) * 2008-12-18 2010-07-01 Infineon Technologies Ag Leistungshalbleitermodul mit versteifter Bodenplatte
DE102008054932B4 (de) * 2008-12-18 2011-12-01 Infineon Technologies Ag Leistungshalbleitermodul mit versteifter Bodenplatte
DE102009035819A1 (de) 2009-08-01 2011-02-03 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit stromsymmetrischem Lastanschlusselement
EP2282339A1 (de) 2009-08-01 2011-02-09 SEMIKRON Elektronik GmbH & Co. KG Leistungshalbleitermodul mit stromsymmetrischem Lastanschlusselement

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US20050035445A1 (en) 2005-02-17
EP1501127A2 (de) 2005-01-26
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KR20050011714A (ko) 2005-01-29
DE10333329B4 (de) 2011-07-21
JP2005045238A (ja) 2005-02-17
DE502004009640D1 (de) 2009-08-06
EP1501127B1 (de) 2009-06-24
ATE434833T1 (de) 2009-07-15
US7030491B2 (en) 2006-04-18
JP4264392B2 (ja) 2009-05-13

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