DE10325629A1 - Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition - Google Patents

Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition Download PDF

Info

Publication number
DE10325629A1
DE10325629A1 DE10325629A DE10325629A DE10325629A1 DE 10325629 A1 DE10325629 A1 DE 10325629A1 DE 10325629 A DE10325629 A DE 10325629A DE 10325629 A DE10325629 A DE 10325629A DE 10325629 A1 DE10325629 A1 DE 10325629A1
Authority
DE
Germany
Prior art keywords
group
mixture
compound
deposition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10325629A
Other languages
German (de)
English (en)
Inventor
Hilde Dr. Hardtdegen
Roland Dr. Schmidt
Nicoleta Kaluza
Konrad Wirtz
Yuri Dr. Makarov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Priority to DE10325629A priority Critical patent/DE10325629A1/de
Priority to KR1020057017675A priority patent/KR101105629B1/ko
Priority to DE502004010071T priority patent/DE502004010071D1/de
Priority to JP2006504238A priority patent/JP4712687B2/ja
Priority to AT04713004T priority patent/ATE443165T1/de
Priority to EP04713004A priority patent/EP1608794B1/de
Priority to US10/550,365 priority patent/US20070031991A1/en
Priority to PCT/DE2004/000315 priority patent/WO2004085702A1/de
Publication of DE10325629A1 publication Critical patent/DE10325629A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE10325629A 2003-03-21 2003-06-06 Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition Withdrawn DE10325629A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE10325629A DE10325629A1 (de) 2003-03-21 2003-06-06 Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition
KR1020057017675A KR101105629B1 (ko) 2003-03-21 2004-02-20 유기금속 화학 기상 증착에 의하여 기판상에 화합물을증착하는 방법
DE502004010071T DE502004010071D1 (de) 2003-03-21 2004-02-20 Vorrichtung zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition
JP2006504238A JP4712687B2 (ja) 2003-03-21 2004-02-20 有機金属気相沈殿装置
AT04713004T ATE443165T1 (de) 2003-03-21 2004-02-20 Vorrichtung zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition
EP04713004A EP1608794B1 (de) 2003-03-21 2004-02-20 Vorrichtung zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition
US10/550,365 US20070031991A1 (en) 2003-03-21 2004-02-20 Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition
PCT/DE2004/000315 WO2004085702A1 (de) 2003-03-21 2004-02-20 Verfahren zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10312768 2003-03-21
DE10312768.2 2003-03-21
DE10325629A DE10325629A1 (de) 2003-03-21 2003-06-06 Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition

Publications (1)

Publication Number Publication Date
DE10325629A1 true DE10325629A1 (de) 2004-10-07

Family

ID=32946055

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10325629A Withdrawn DE10325629A1 (de) 2003-03-21 2003-06-06 Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition
DE502004010071T Expired - Lifetime DE502004010071D1 (de) 2003-03-21 2004-02-20 Vorrichtung zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE502004010071T Expired - Lifetime DE502004010071D1 (de) 2003-03-21 2004-02-20 Vorrichtung zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition

Country Status (3)

Country Link
JP (1) JP4712687B2 (ja)
AT (1) ATE443165T1 (ja)
DE (2) DE10325629A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2957939A1 (fr) * 2010-03-29 2011-09-30 Koolerheadz Dispositif d'injection de gaz modulaire
WO2011121508A1 (en) * 2010-03-29 2011-10-06 Koolerheadz Modular gas injection device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5215267B2 (ja) * 2009-08-31 2013-06-19 日本電信電話株式会社 化合物半導体膜の製造方法
JP6283245B2 (ja) * 2014-03-28 2018-02-21 旭化成エレクトロニクス株式会社 化合物半導体基板の製造方法
JP2016174071A (ja) * 2015-03-17 2016-09-29 日本電信電話株式会社 結晶成長方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2661554A1 (fr) * 1990-04-30 1991-10-31 Philips Electronique Lab Dispositif d'introduction des gaz dans la chambre d'un reacteur d'epitaxie, chambre de reacteur comportant un tel dispositif d'introduction de gaz, et utilisation d'une telle chambre pour la realisation de couches semiconductrices.
EP0505249A1 (en) * 1991-03-18 1992-09-23 Fujitsu Limited Apparatus for growing mixed compound semiconductor and growth method using the same
WO1997008356A2 (en) * 1995-08-18 1997-03-06 The Regents Of The University Of California Modified metalorganic chemical vapor deposition of group iii-v thin layers
WO1998014322A1 (en) * 1996-10-04 1998-04-09 Northwestern University Doped barium/strontium titanate thin films and method of doping
EP1207215A2 (en) * 2000-11-15 2002-05-22 Ngk Insulators, Ltd. A method for fabricating a III-V nitride film and an apparatus for fabricating the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2646931B2 (ja) * 1991-04-11 1997-08-27 松下電器産業株式会社 気相成長装置とそれを用いた気相成長方法
JPH1112740A (ja) * 1997-06-23 1999-01-19 Nissin Electric Co Ltd 液体原料の気化装置およびそれを備えるｃｖｄ装置のクリーニング方法
KR100330749B1 (ko) * 1999-12-17 2002-04-03 서성기 반도체 박막증착장치
JP2001250783A (ja) * 2000-03-08 2001-09-14 Japan Pionics Co Ltd 気相成長装置及び気相成長方法
JP3472282B2 (ja) * 2001-08-30 2003-12-02 東京エレクトロン株式会社 流体制御装置及び熱処理装置と流体制御方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2661554A1 (fr) * 1990-04-30 1991-10-31 Philips Electronique Lab Dispositif d'introduction des gaz dans la chambre d'un reacteur d'epitaxie, chambre de reacteur comportant un tel dispositif d'introduction de gaz, et utilisation d'une telle chambre pour la realisation de couches semiconductrices.
EP0505249A1 (en) * 1991-03-18 1992-09-23 Fujitsu Limited Apparatus for growing mixed compound semiconductor and growth method using the same
WO1997008356A2 (en) * 1995-08-18 1997-03-06 The Regents Of The University Of California Modified metalorganic chemical vapor deposition of group iii-v thin layers
WO1998014322A1 (en) * 1996-10-04 1998-04-09 Northwestern University Doped barium/strontium titanate thin films and method of doping
EP1207215A2 (en) * 2000-11-15 2002-05-22 Ngk Insulators, Ltd. A method for fabricating a III-V nitride film and an apparatus for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2957939A1 (fr) * 2010-03-29 2011-09-30 Koolerheadz Dispositif d'injection de gaz modulaire
WO2011121508A1 (en) * 2010-03-29 2011-10-06 Koolerheadz Modular gas injection device
US9410248B2 (en) 2010-03-29 2016-08-09 Koolerheadz Modular gas injection device
US10221479B2 (en) 2010-03-29 2019-03-05 Koolerheadz Modular gas injection device

Also Published As

Publication number Publication date
JP2006520851A (ja) 2006-09-14
ATE443165T1 (de) 2009-10-15
JP4712687B2 (ja) 2011-06-29
DE502004010071D1 (de) 2009-10-29

Similar Documents

Publication Publication Date Title
DE60038250T2 (de) Apparat und verfahren für die minimierung parasitischer cvd während der atomschicht-beschichtung
DE10132882B4 (de) Verfahren zum Ausbilden einer Dünnschicht unter Verwendung einer Atomschichtabscheidung
DE60129380T2 (de) Vorrichtung und Verfahren zum Auftragen einer Dünnschicht auf einen Wafer durch Abscheidung von atomaren Schichten
DE102011002145B4 (de) Vorrichtung und Verfahren zum großflächigen Abscheiden von Halbleiterschichten mit gasgetrennter HCI-Einspeisung
DE112006003315T5 (de) Gaskopf und Dünnfilm-Herstellungsvorrichtung
DE112011104446B4 (de) Chemische Gasphasenabscheidungs-Vorrichtung und Verfahren zum Herstellen von lichtemittierenden Vorrichtungen mit derselben
DE102004056170A1 (de) Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US8318590B2 (en) Methods and systems for forming thin films
DE102014201554A1 (de) Dampfphasenepitaxievorrichtung und Dampfphasenepitaxieverfahren
DE102005038873A1 (de) Vielkammer-MOCVD-Aufwachsvorrichtung für hohe Geschwindigkeit/ hohen Durchsatz
DE60112372T2 (de) Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung
DE102014105294A1 (de) Vorrichtung und Verfahren zur Abgasreinigung an einem CVD-Reaktor
DE102012103295A1 (de) Räumlich optimierte Anordnung zum Bearbeiten von Halbleitersubstraten
DE102011002146B4 (de) Vorrichtung und Verfahren zum Abscheiden von Halbleiterschichten mit HCI-Zugabe zur Unterdrückung parasitären Wachstums
DE10325629A1 (de) Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition
EP1608794B1 (de) Vorrichtung zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition
DE102004050806A1 (de) Verfahren zur Herstellung von (AI,Ga)N Einkristallen
DE112019001953T5 (de) Vorrichtung zur chemischen gasphasenabscheidung mit mehrzonen-injektorblock
DE602004010894T2 (de) Verfahren zur cvd-abscheidung eines silberfilms auf einem substrat
DE112011103869T5 (de) Verfahren zum Ausbilden von III-Nitridgrundmaterialien auf Metallnitrid-Wachstumsvorlagenschichten und Strukturen, die durch derartige Verfahren ausgebildet sind
DE102009025971A1 (de) Verfahren zum Einrichten eines Epitaxie-Reaktors
DE60008241T2 (de) Verfahren und vorrichtung zum epitaktischem wachsen eines materials auf einem substrat
DE102009018700B4 (de) Beschichtungsanlage und Verfahren zum Beschichten
DE19851824A1 (de) Verfahren zur Verminderung von Ablagerungen in einem CVD-Reaktor sowie ein zur Durchführung eines solchen Verfahrens geeigneter CVD-Reaktor
EP3071725B1 (de) Verfahren zur herstellung eines verbundkörpers mit zumindest einer funktionellen schicht oder zur weiteren herstellung elektronischer oder opto-elektronischer bauelemente

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8130 Withdrawal