JP4712687B2 - 有機金属気相沈殿装置 - Google Patents
有機金属気相沈殿装置 Download PDFInfo
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- JP4712687B2 JP4712687B2 JP2006504238A JP2006504238A JP4712687B2 JP 4712687 B2 JP4712687 B2 JP 4712687B2 JP 2006504238 A JP2006504238 A JP 2006504238A JP 2006504238 A JP2006504238 A JP 2006504238A JP 4712687 B2 JP4712687 B2 JP 4712687B2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4411—Cooling of the reaction chamber walls
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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Description
・3/2方路弁(V1、V2):1/4インチVCR−FFF
・3/2方路弁(V3)手動操作され、組立てられたパネル弁(ボシュ社)0820 402 024 3/2 WV NG4(1/8インチ)
・ステンレス鋼パイプ8/8インチ電気研磨された
・空圧ホース1/8インチ
┌──────────┬──────────┬──────────┬─────┐
│ 層化合物 │ 有機体 │グループV・グループ│キャリアガ│
│ │ │VI- 化合物 │ス │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムガリウム│TMAI(トリメチル│AsH3 (アルシン)│H2 ,N2 │
│砒化物((AlGa)│アルミニウム)、 │TBAs(第三ブチル│,Ar │
│As) │TMGa(トリメチル│アルシン) │ │
│ │ガリウム)、TEGa│ │ │
│ │(トリエチルガリウム│ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウム砒化物(Ga│TMGa,TEGa │AsH3 ,TBAs │H2 ,N2 │
│As) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│ │ │ │ │
│アルミニウム砒化物(│TMAl,TEAl │AsH3 ,TBAs │H2 ,N2 │
│AlAs) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│ガリウムインジウム砒│TMGa,TEGa,│AsH3 ,TBAs │H2 ,N2 │
│化物((GaIn)A│TMIn │ │,Ar │
│s) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│インジウム燐化物( │TMIn │PH3 ,TBP │H2 ,N2 │
│InP) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムガリウム│TMAl,TEAl,│PH3 (燐酸),TB│H2 ,N2 │
│インジウム燐化物((│TMGa,TEGa,│P(第三ブチル燐化物│,Ar │
│AlGaIn)P) │TMIn(トリメチル│) │ │
│ │インジウム) │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウムインジウム燐│TMGa,TEGa,│PH3 ,TBP │H2 ,N2 │
│化物((GaIn)P│TMIn │ │,Ar │
│) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムインジウ│TMAl,TEAl,│PH3 ,TBP │H2 ,N2 │
│ム燐化物((AlIn│TMIn │ │,Ar │
│)P) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウムインジウム砒│TMGa,TEGa,│AsH3 ,TBAs,│H2 ,N2 │
│素燐化物((GaIn│TMIn │PH3 ,TBP │,Ar │
│)(AsP)) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムガリウム│TMAl,TEAl,│AsH3 ,TBAs,│H2 ,N2 │
│インジウム砒素燐化物│TMGa,TEGa,│PH3 ,TBP │,Ar │
│((AlGaIn)(│TMIn │ │ │
│AsP)) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│アルミニウム窒化物(│TMAl,TEAl │NH3 (アンモニア)│H2 ,N2 │
│AlN) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│ガリウム窒化物 │TMGa,TEGa │NH3 │H2 ,N2 │
│(GaN) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│インジウム窒化物 │TMIn │NH3 │H2 ,N2 │
│(InN) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムガリウム│TMAl,TEAl,│NH3 │H2 ,N2 │
│インジウム窒化物 │TMGa,TEGa,│ │,Ar │
│((AlGaIn)N│TMIn │ │ │
│) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウムインジウム窒│TMGa,TEGa,│NH3 │H2 ,N2 │
│化物((GaIn)N│TMIn │ │,Ar │
│) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウムアンチモン │TMGa,TEGa,│TMSb(トリメチル│H2 ,N2 │
│(GaSb) │ │アンチモン), │,Ar │
│ │ │TESb(トリエチル│ │
│ │ │アンチモン) │ │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムアンチモ│TMAl,TEAl │TMSb,TESb │H2 ,N2 │
│ン(AlSb) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│インジウムアンチモン│TMIn │TMSb,TESb │H2 ,N2 │
│(InSb) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムインジウ│TMAl,TEAl,│TMSb,TESb │H2 ,N2 │
│ムアンチモン │TMIn │ │,Ar │
│((AlIn)Sb)│ │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウムインジウムア│TMGa,TEGa,│TMSb,TESb │H2 ,N2 │
│ンチモン │TMIn │ │,Ar │
│((GaIn)Sb)│ │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウム砒化アンチモ│TMGa,TEGa │AsH3 ,TBAs,│H2 ,N2 │
│ン(Ga(AsSb)│ │TMSb,TESb │,Ar │
├──────────┼──────────┼──────────┼─────┤
│アルミニウム砒化アン│TMAl,TEAl,│AsH3 ,TBAs,│H2 ,N2 │
│チモン │ │TMSb,TESb │,Ar │
│(Al(AsSb))│ │ │ │
├──────────┼──────────┼──────────┼─────┤
│インジウム砒化アンチ│TMIn │AsH3 ,TBAs,│H2 ,N2 │
│モン(In(AsSb│ │TMSb,TESb │,Ar │
│)) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウムインジウム砒│TMGa,TEGa,│AsH3 ,TBAs,│H2 ,N2 │
│化アンチモン (( │TMIn │TMSb,TESb │,Ar │
│GaIn)(AsSb│ │ │ │
│)) │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│ガリウム燐化アンチモ│TMGa,TEGa,│PH3 ,TBP, │H2 ,N2 │
│ン(Ga(PSb) │ │TMSb,TESb │,Ar │
├──────────┼──────────┼──────────┼─────┤
│インジウム燐化アンチ│TMIn │PH3 ,TBP, │H2 ,N2 │
│モン(In(PSb)│ │TMSb,TESb │,Ar │
├──────────┼──────────┼──────────┼─────┤
│インジウム燐化砒化ア│TMIn │PH3 ,TBP, │H2 ,N2 │
│ンチモン │ │AsH3 ,TBAs,│,Ar │
│(In(PAsSb)│ │TMSb,TESb │ │
├──────────┼──────────┼──────────┼─────┤
│カドミニウムテルル酸│DMCd(ジメチルカ│DETe(ジエチルテ│H2 ,N2 │
│(CdTe) │ドミニウム) │ルル),DMTe(ジ│,Ar │
│ │ │メチルテルル), │ │
│ │ │DIPte(ジイソプ│ │
│ │ │ロピルテルル) │ │
├──────────┼──────────┼──────────┼─────┤
│水銀テルル酸 │Hg(水銀) │DETe │H2 ,N2 │
│(HgTe) │ │ │,Ar │
├──────────┼──────────┼──────────┼─────┤
│カドミニウム水銀テル│DMCd,Hg │DETe │H2 ,N2 │
│ル酸 │ │ │,Ar │
│((CdHg)Te)│ │ │ │
│ │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│硫化亜鉛(ZnS) │DMZn(ジメチル亜│H2 S(硫化水素),│H2 ,N2 │
│ │鉛),DEZn(ジエ│DES(ジエチル硫黄│,Ar │
│ │チル亜鉛) │),DTBS(第三ブ│ │
│ │ │チル硫黄) │ │
├──────────┼──────────┼──────────┼─────┤
│セレン酸亜鉛 │DMZn(ジメチル亜│DMSe(ジメチルセ│H2 ,N2 │
│(ZnSe) │鉛),DEZn(ジエ│レン),DESe(ジ│,Ar │
│ │チル亜鉛) │エチルセレン), │ │
│ │ │DIPSe(ジイソプ│ │
│ │ │ロピルセレン), │ │
│ │ │DTBSe(第三ブチ│ │
│ │ │ルセレン) │ │
├──────────┼──────────┼──────────┼─────┤
│バリウムストロンチウ│Ba(thd)2,Sr(thd│O2 ( 酸素) ,O3 ( │N2 ,Ar│
│ムチタネート │)2,( バリウム/ スト│オゾン) ,N2 O( 一│ │
│(BaSr)TiO3 │ロンチウムテトラメチ│酸化窒素) │ │
│ │ル- ヘプタンディネー│ │ │
│ │ト), │ │ │
│ │Ba(hfa)2,Sr(hfa│ │ │
│ │)2,( バリウム/ スト│ │ │
│ │ロンチウムヘクサフル│ │ │
│ │オロアセチルアセトネ│ │ │
│ │ート) ,TIP(チタ│ │ │
│ │ンテトラキスイソプロ│ │ │
│ │ポキシド),TTB(│ │ │
│ │チタンテトラキステル│ │ │
│ │ティールブトキシド)│ │ │
│ │ │ │ │
├──────────┼──────────┼──────────┼─────┤
│鉛ジルコネートチタネ│TEL(テトラエチル│O2 ( 酸素) ,O3 ( │ │
│ート ( │鉛),TBL(テトラ│オゾン) ,N2 O( 一│ │
│Pb(ZrTi)O3 │フェニール鉛), │酸化窒素) │ │
│) │Pb(thd)2(鉛テトラ│ │ │
│ │メチルヘプタンディネ│ │ │
│ │ート),ZTB(ジル│ │ │
│ │コンテトラキステルテ│ │ │
│ │ィールブトキシド),│ │ │
│ │ZIP(ジルコンテト│ │ │
│ │ラキスイソプロポキシ│ │ │
│ │ド),TIP,TTB│ │ │
├──────────┼──────────┼──────────┼─────┤
│バリウムチタネート │Ba(thd)2,Ba(hfa│O2 ( 酸素) ,O3 ( │ │
│(BaTiO3 ) │)2,TIP,TTB │オゾン) ,N2 O( 一│ │
│ │ │酸化窒素) │ │
├──────────┼──────────┼──────────┼─────┤
│鉛バリウムチタネート│TEL,TBL, │O2 ( 酸素) ,O3 ( │ │
│(PbBa)TiO3 │Pb(thd)2Ba(thd)2│オゾン) ,N2 O( 一│ │
│) │,Ba(hfa)2,TIP│酸化窒素) │ │
│ │,TTB │ │ │
├──────────┼──────────┼──────────┼─────┤
│鉛バリウムジルコネー│TEL,TBL, │O2 ( 酸素) ,O3 ( │ │
│トチタネート │Pb(thd)2,Ba(thd│オゾン) ,N2 O( 一│ │
│(PbBa)(ZrT│)2,ZTB,ZIP,│酸化窒素) │ │
│i)O3 ) │Ba(hfa)2,TIP,│ │ │
│ │TTB │ │ │
├──────────┼──────────┼──────────┼─────┤
│ハフニウム酸 │Hf( NR1 R2)4 (│O2 ( 酸素) ,O3 ( │ │
│(HfO2 ) │ハフニウムアミド)例│オゾン) ,N2 O( 一│ │
│ │えば:ハフニウムジメ│酸化窒素) │ │
│ │チルアミド,ハフニウ│ │ │
│ │ムジエチルアミド,ハ│ │ │
│ │フニウムメチルエチル│ │ │
│ │アミド; │ │ │
│ │Hf( OR )4 (ハフ│ │ │
│ │ニウムアルコキシド)│ │ │
│ │例えば:ハフニウムメ│ │ │
│ │トキシド,ハフニウム│ │ │
│ │テルテールブトキシド│ │ │
│ │Hf( ONR2 )4(ハ│ │ │
│ │フニウムハイドロキシ│ │ │
│ │ルアミド)例えば:ハ│ │ │
│ │フニウムハイドロジエ│ │ │
│ │チルアミド │ │ │
│ │Hf( Ot Bu )2 (│ │ │
│ │mmp)2 ハフニウム│ │ │
│ │ジテールティートブチ│ │ │
│ │ルオキシド- ジ(1- メ│ │ │
│ │トキシル- 2-メチル- │ │ │
│ │2-プロパノレートと、│ │ │
│ │Hf( mmp)4 :ハフ│ │ │
│ │ニウムテトラ-(1-メト│ │ │
│ │キシル- 2-メチル- 2-│ │ │
│ │プロパノレート) │ │ │
├──────────┼──────────┼──────────┼─────┤
│アルミニウムインジウ│TMAl,TEAl,│AsH3 ,TBAs │H2 ,N2 │
│ム砒化物 │TMIn │ │,Ar │
│((AlIn)As)│ │ │ │
└──────────┴──────────┴──────────┴─────┘
2.....基板
3.....壁
4.....ガス入口
5.....ガス入口
6.....受納器
7.....冷却部
51....導管
52....導管
53....導管
V1,V2,V3...弁
Claims (1)
- 貯蔵容器から装置に導入するガス用の少なくとも二つのガス入口並びに装置を二つの区分室に仕切る一つの分割板を備えて、ガス混合気が一方の区分室に、別のガス混合気が他方の区分室に導入される気相沈殿用MOCVD装置において、少なくとも二つの三方路弁が装置のガス入口とガス用の貯蔵容器との間のガス収集導管に接続されて、ガス混合気用のガス入口が弁によって交換され得ることを特徴とするMOCVD装置。
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DE10312768.2 | 2003-03-21 | ||
DE10312768 | 2003-03-21 | ||
DE10325629A DE10325629A1 (de) | 2003-03-21 | 2003-06-06 | Verfahren zur Abscheidung von Verbindungen auf einem Substrat mittels metallorganischer Gasphasendeposition |
DE10325629.6 | 2003-06-06 | ||
PCT/DE2004/000315 WO2004085702A1 (de) | 2003-03-21 | 2004-02-20 | Verfahren zur abscheidung von verbindungen auf einem substrat mittels metallorganischer gasphasendeposition |
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JP2006520851A JP2006520851A (ja) | 2006-09-14 |
JP4712687B2 true JP4712687B2 (ja) | 2011-06-29 |
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JP (1) | JP4712687B2 (ja) |
AT (1) | ATE443165T1 (ja) |
DE (2) | DE10325629A1 (ja) |
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JP5215267B2 (ja) * | 2009-08-31 | 2013-06-19 | 日本電信電話株式会社 | 化合物半導体膜の製造方法 |
FR2957939B1 (fr) * | 2010-03-29 | 2012-08-17 | Koolerheadz | Dispositif d'injection de gaz modulaire |
US9410248B2 (en) | 2010-03-29 | 2016-08-09 | Koolerheadz | Modular gas injection device |
JP6283245B2 (ja) * | 2014-03-28 | 2018-02-21 | 旭化成エレクトロニクス株式会社 | 化合物半導体基板の製造方法 |
JP2016174071A (ja) * | 2015-03-17 | 2016-09-29 | 日本電信電話株式会社 | 結晶成長方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0594956A (ja) * | 1991-04-11 | 1993-04-16 | Matsushita Electric Ind Co Ltd | 気相成長装置とそれを用いた気相成長方法 |
JPH1112740A (ja) * | 1997-06-23 | 1999-01-19 | Nissin Electric Co Ltd | 液体原料の気化装置およびそれを備えるcvd装置のクリーニング方法 |
JP2001217232A (ja) * | 1999-12-17 | 2001-08-10 | Ips Ltd | 半導体の薄膜蒸着装置 |
JP2001250783A (ja) * | 2000-03-08 | 2001-09-14 | Japan Pionics Co Ltd | 気相成長装置及び気相成長方法 |
JP2002151419A (ja) * | 2000-11-15 | 2002-05-24 | Ngk Insulators Ltd | Iiiv族窒化物膜の製造方法および製造装置 |
JP2003074800A (ja) * | 2001-08-30 | 2003-03-12 | Tokyo Electron Ltd | 流体制御装置及び熱処理装置と流体制御方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2661554A1 (fr) * | 1990-04-30 | 1991-10-31 | Philips Electronique Lab | Dispositif d'introduction des gaz dans la chambre d'un reacteur d'epitaxie, chambre de reacteur comportant un tel dispositif d'introduction de gaz, et utilisation d'une telle chambre pour la realisation de couches semiconductrices. |
JP2722833B2 (ja) * | 1991-03-18 | 1998-03-09 | 富士通株式会社 | 気相エピタキシャル成長装置および気相エピタキシャル成長方法 |
WO1997008356A2 (en) * | 1995-08-18 | 1997-03-06 | The Regents Of The University Of California | Modified metalorganic chemical vapor deposition of group iii-v thin layers |
WO1998014322A1 (en) * | 1996-10-04 | 1998-04-09 | Northwestern University | Doped barium/strontium titanate thin films and method of doping |
-
2003
- 2003-06-06 DE DE10325629A patent/DE10325629A1/de not_active Withdrawn
-
2004
- 2004-02-20 DE DE502004010071T patent/DE502004010071D1/de not_active Expired - Lifetime
- 2004-02-20 JP JP2006504238A patent/JP4712687B2/ja not_active Expired - Fee Related
- 2004-02-20 AT AT04713004T patent/ATE443165T1/de active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0594956A (ja) * | 1991-04-11 | 1993-04-16 | Matsushita Electric Ind Co Ltd | 気相成長装置とそれを用いた気相成長方法 |
JPH1112740A (ja) * | 1997-06-23 | 1999-01-19 | Nissin Electric Co Ltd | 液体原料の気化装置およびそれを備えるcvd装置のクリーニング方法 |
JP2001217232A (ja) * | 1999-12-17 | 2001-08-10 | Ips Ltd | 半導体の薄膜蒸着装置 |
JP2001250783A (ja) * | 2000-03-08 | 2001-09-14 | Japan Pionics Co Ltd | 気相成長装置及び気相成長方法 |
JP2002151419A (ja) * | 2000-11-15 | 2002-05-24 | Ngk Insulators Ltd | Iiiv族窒化物膜の製造方法および製造装置 |
JP2003074800A (ja) * | 2001-08-30 | 2003-03-12 | Tokyo Electron Ltd | 流体制御装置及び熱処理装置と流体制御方法 |
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JP2006520851A (ja) | 2006-09-14 |
ATE443165T1 (de) | 2009-10-15 |
DE502004010071D1 (de) | 2009-10-29 |
DE10325629A1 (de) | 2004-10-07 |
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