DE1032404B - Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten - Google Patents

Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten

Info

Publication number
DE1032404B
DE1032404B DEG12486A DEG0012486A DE1032404B DE 1032404 B DE1032404 B DE 1032404B DE G12486 A DEG12486 A DE G12486A DE G0012486 A DEG0012486 A DE G0012486A DE 1032404 B DE1032404 B DE 1032404B
Authority
DE
Germany
Prior art keywords
layer
semiconductor
germanium
vapor
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEG12486A
Other languages
German (de)
English (en)
Inventor
Clarence Wilson Hewlett Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1032404B publication Critical patent/DE1032404B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
    • C08G65/04—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers only
    • C08G65/06—Cyclic ethers having no atoms other than carbon and hydrogen outside the ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10P14/22—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3211—
    • H10P14/3411—
    • H10P14/3418—
    • H10P14/3421—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
DEG12486A 1952-08-20 1953-08-20 Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten Pending DE1032404B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US305446A US2780569A (en) 1952-08-20 1952-08-20 Method of making p-nu junction semiconductor units

Publications (1)

Publication Number Publication Date
DE1032404B true DE1032404B (de) 1958-06-19

Family

ID=23180823

Family Applications (1)

Application Number Title Priority Date Filing Date
DEG12486A Pending DE1032404B (de) 1952-08-20 1953-08-20 Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten

Country Status (5)

Country Link
US (1) US2780569A (Direct)
DE (1) DE1032404B (Direct)
FR (1) FR1105858A (Direct)
GB (1) GB757805A (Direct)
NL (2) NL180750B (Direct)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1263714B (de) * 1963-09-19 1968-03-21 Ass Elect Ind Verfahren zum epitaktischen Aufwachsen einer Schicht aus Halbleitermaterial
DE1278800B (de) * 1962-08-27 1968-09-26 Siemens Ag Verfahren zum schichtweisen kristallinen Vakuumaufdampfen hochreinen sproeden Materials
DE1298512B (de) * 1964-03-13 1969-07-03 Telefunken Patent Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen
DE1093019B (Direct) * 1958-07-26 1974-08-08
DE3216387A1 (de) * 1982-05-03 1983-11-03 Vereinigte Glaswerke Gmbh, 5100 Aachen Verfahren und vorrichtung zur herstellung einer absorberschicht auf einem grundkoerper, insbesondere fuer solarkollektoren

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548791A (Direct) * 1955-06-20
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
BE562490A (Direct) * 1956-03-05 1900-01-01
US3226271A (en) * 1956-03-29 1965-12-28 Baldwin Co D H Semi-conductive films and method of producing them
NL215949A (Direct) * 1956-04-03
US2968750A (en) * 1957-03-20 1961-01-17 Clevite Corp Transistor structure and method of making the same
US2929753A (en) * 1957-04-11 1960-03-22 Beckman Instruments Inc Transistor structure and method
DE1067936B (Direct) * 1958-02-04 1959-10-29
FR1191404A (fr) * 1958-02-10 1959-10-20 Ct D Etudes Et De Dev De L Ele Procédé de réalisation de diodes et produits industriels en résultant
US2970896A (en) * 1958-04-25 1961-02-07 Texas Instruments Inc Method for making semiconductor devices
US3012921A (en) * 1958-08-20 1961-12-12 Philco Corp Controlled jet etching of semiconductor units
US3012920A (en) * 1959-01-05 1961-12-12 Bell Telephone Labor Inc Process of selective etching with resist preparation
US3079254A (en) * 1959-01-26 1963-02-26 George W Crowley Photographic fabrication of semiconductor devices
NL239785A (Direct) * 1959-06-02
NL266513A (Direct) * 1960-07-01
US3189798A (en) * 1960-11-29 1965-06-15 Westinghouse Electric Corp Monolithic semiconductor device and method of preparing same
NL284599A (Direct) * 1961-05-26 1900-01-01
NL278654A (Direct) * 1961-06-08
NL286507A (Direct) * 1961-12-11
NL288035A (Direct) * 1962-01-24
DE1199897B (de) * 1962-04-03 1965-09-02 Philips Nv Verfahren zur Herstellung einer Sperrschicht in einem n-leitenden Cadmiumsulfidkoerper
US3257247A (en) * 1962-10-17 1966-06-21 Texas Instruments Inc Method of forming a p-n junction
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
DE1231824B (de) * 1964-07-04 1967-01-05 Danfoss As Kontaktanordnung fuer ein elektronisches Festkoerperschaltelement und Verfahren zu seiner Herstellung
US3313988A (en) * 1964-08-31 1967-04-11 Gen Dynamics Corp Field effect semiconductor device and method of forming same
US3470426A (en) * 1964-11-18 1969-09-30 Melpar Inc Thin film circuit element of amorphous semiconductor exhibiting a voltage variable non-linear resistance with symmetrical characteristics
US3460007A (en) * 1967-07-03 1969-08-05 Rca Corp Semiconductor junction device
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE623488C (Direct) *
AT155712B (de) * 1936-06-20 1939-03-10 Aeg Verfahren zur Herstellung von Halbleiterüberzügen.

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2151457A (en) * 1936-07-14 1939-03-21 Robley C Williams Method of coating surfaces by thermal evaporation
US2239452A (en) * 1937-03-13 1941-04-22 Robley C Williams Method and apparatus for producing semitransparent coatings
US2413605A (en) * 1944-05-27 1946-12-31 Libbey Owens Ford Glass Co Process of evaporating metals
NL84061C (Direct) * 1948-06-26
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
US2692239A (en) * 1949-06-18 1954-10-19 Standard Oil Dev Co Process of preparing a magnesia hydrosol and magnesia hydrogel
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
NL82014C (Direct) * 1949-11-30
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE623488C (Direct) *
AT155712B (de) * 1936-06-20 1939-03-10 Aeg Verfahren zur Herstellung von Halbleiterüberzügen.

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1093019B (Direct) * 1958-07-26 1974-08-08
DE1093019C2 (de) * 1958-07-26 1974-08-08 Verfahren zur herstellung von halbleiteranordnungen
DE1278800B (de) * 1962-08-27 1968-09-26 Siemens Ag Verfahren zum schichtweisen kristallinen Vakuumaufdampfen hochreinen sproeden Materials
DE1263714B (de) * 1963-09-19 1968-03-21 Ass Elect Ind Verfahren zum epitaktischen Aufwachsen einer Schicht aus Halbleitermaterial
DE1298512B (de) * 1964-03-13 1969-07-03 Telefunken Patent Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen
DE3216387A1 (de) * 1982-05-03 1983-11-03 Vereinigte Glaswerke Gmbh, 5100 Aachen Verfahren und vorrichtung zur herstellung einer absorberschicht auf einem grundkoerper, insbesondere fuer solarkollektoren

Also Published As

Publication number Publication date
NL180750B (nl)
FR1105858A (fr) 1955-12-08
GB757805A (en) 1956-09-26
US2780569A (en) 1957-02-05
NL98697C (Direct)

Similar Documents

Publication Publication Date Title
DE1032404B (de) Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten
DE961913C (de) Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit p-n-UEbergaengen
DE68919291T2 (de) Elektrolumineszierende Anordnung von Verbindungshalbleitern.
DE2538325C2 (de) Verfahren zur Herstellung von Halbleiterbauelementen
DE1794113C3 (de) Verfahren zum Eindiffundieren von Fremdalomen in Siliciumcarbid
DE1084381B (de) Legierungsverfahren zur Herstellung von pn-UEbergaengen an der Oberflaeche eines Halbleiterkoerpers
DE2160427C3 (Direct)
DE1146982B (de) Verfahren zur Herstellung von Halbleiterzonen mit genauer Dicke zwischen flaechenhaften PN-UEbergaengen in einkristallinen Halbleiterkoerpern von Halbleiterbauelementen,insbesondere von Dreizonentransistoren
DE2711365C2 (Direct)
DE1187326B (de) Verfahren zur Herstellung einer Silizium-Schaltdiode
DE1246890B (de) Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
DE1024640B (de) Verfahren zur Herstellung von Kristalloden
DE2039381C3 (de) Verfahren zur Herstellung einer epitaktisch auf einem n-leitenden Substrat aus Galliumphosphid gewachsenen p-leitenden Galliumphosphidschicht
DE2019655C2 (de) Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers
DE2735937C2 (de) Flüssigphasenepitaxie-Verfahren zur Herstellung von Halbleiter-Heterostrukturen
DE1808928A1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE1150456B (de) Esaki-Diode und Verfahren zu ihrer Herstellung
DE69323031T2 (de) Ohmsche Elektrode, Verfahren für ihre Herstellung und lichtemittierende Vorrichtung
DE69106646T2 (de) Herstellungsverfahren für eine blaues Licht emittierende ZnSe-Vorrichtung.
DE1764023B2 (de) Halbleiterbauelement und verfahren zum herstellen
DE1564170B2 (de) Halbleiterbauelement hoher schaltgeschwindigkeit und ver fahren zu seiner herstellung
DE69001016T2 (de) Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien.
DE1113034B (de) Diffusionsverfahren zur gleichzeitigen Bildung von PN-UEbergaengen in mehreren Halbleiter-koerpern von Halbleiteranordnungen
DE1285625C2 (de) Verfahren zur herstellung eines halbleiterbauelements
AT219097B (de) Tunnel-Diode und Verfahren zu ihrer Herstellung